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onsemi MTP10N10ELG MOSFET N-CH 100V 10A TO220AB
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MTP10N10E Datasheets (17)

Part	Manufacturer	Description	Datasheet Type	PDF
MTP10N10E	Motorola	TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM	Original	PDF
MTP10N10E	On Semiconductor	Power MOSFET 10 A, 100 V	Original	PDF
MTP10N10E	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
MTP10N10E	Motorola	Switchmode Datasheet	Scan	PDF
MTP10N10E	Motorola	TMOS Power FETs 10A 100V	Scan	PDF
MTP10N10E	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP10N10E	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MTP10N10E	Unknown	FET Data Book	Scan	PDF
MTP10N10E	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 100V, 5A, Pkg Style TO220AB	Scan	PDF
MTP10N10E/D	On Semiconductor	TMOS POWER FETs 10 AMPERES 100 VOLTS	Original	PDF
MTP10N10E-D	On Semiconductor	Power MOSFET 2 Amps, 60 Volts N-Channel Micro8, Du	Original	PDF
MTP10N10EL	Motorola	TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 ?	Original	PDF
MTP10N10EL	On Semiconductor	Power MOSFET 10 A, 100 V, Logic Level	Original	PDF
MTP10N10EL	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF

MTP10N10EL/D	On Semiconductor	TMOS POWER FET 10 AMPERES 100 VOLTS	Original	PDF
MTP10N10EL-D	On Semiconductor	Power MOSFET 10 Amps, 100 Volts, Logic Level N-Cha	Original	PDF
MTP10N10ELG	On Semiconductor	Power MOSFET 10 Amps, 100 Volts, Logic Level	Original	PDF

MTP10N10E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AN569 Abstract: MTP10N10EL Text: MTP10N10EL Preferred Device Power MOSFET 10 Amps, 100 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for	Original	MTP10N10EL r14525 MTP10N10EL/D AN569 MTP10N10EL	PDF
Untitled Abstract: No abstract text available Text: MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers drain−to−source diodes with fast recovery times. Designed for	Original	MTP10N10E MTP10N10E/D	PDF
MTP10N10ELG Abstract: AN569 MTP10N10EL Text: MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for	Original	MTP10N10EL O-220 MTP10N10EL/D MTP10N10ELG AN569 MTP10N10EL	PDF
2N3904 Abstract: AN569 MTP10N10E Text: MOTOROLA Order this document by MTP10N10E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation	Original	MTP10N10E/D MTP10N10E MTP10N10E/D* 2N3904 AN569 MTP10N10E	PDF
MTP10N10E Abstract: 2N3904 AN569 Text: MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers drain–to–source diodes with fast recovery times. Designed for	Original	MTP10N10E r14525 MTP10N10E/D MTP10N10E 2N3904 AN569	PDF
Untitled Abstract: No abstract text available Text: MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for	Original	MTP10N10EL MTP10N10EL/D	PDF
drive motor 10A with transistor P channel MOSFET Abstract: IL 741 10A motor drive mosfet H bridge tl 741 50 Amp 100 volt fet 741 amp current to voltage converter using 741 ups high power FET Transistor data sheet AN569 Text: MTP10N10EL Preferred Device Power MOSFET 10 Amps, 100 Volts, Logic Level N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for	Original	MTP10N10EL O-220 MTP10N10EL/D drive motor 10A with transistor P channel MOSFET IL 741 10A motor drive mosfet H bridge tl 741 50 Amp 100 volt fet 741 amp current to voltage converter using 741 ups high power FET Transistor data sheet AN569	PDF
539 MOTOROLA transistor Abstract: AN569 MTP10N10EL mosfet transistor 400 volts.100 amperes motorola TL 741 Text: MOTOROLA Order this document by MTP10N10EL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Logic Level TMOS E-FET. Power Field Effect Transistor Designer's MTP10N10EL Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high	Original	MTP10N10EL/D MTP10N10EL MTP10N10EL/D* 539 MOTOROLA transistor AN569 MTP10N10EL mosfet transistor 400 volts.100 amperes motorola TL 741	PDF
K 741 MOSFET Abstract: MTP10N10ELG Text: MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for	Original	MTP10N10EL O-220 MTP10N10EL/D K 741 MOSFET MTP10N10ELG	PDF
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N	PDF
mosfet cross reference Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local	Original		PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
transistor mosfet buv18a Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9	Original		PDF
mgb20n40cl Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to	Original	smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V	PDF

transistor marking code 12W SOT-23 Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada	Original	SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp	PDF
NTP3055AV Abstract: NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent Text: PRODUCT / PROCESS CHANGE NOTIFICATION UPDATE Generic Copy 08-DEC-2000 SUBJECT: Update Notification #10395 TITLE: Modification To PCN #10344 EFFECTIVE DATE: 17-Mar-2001 AFFECTED CHANGE CATEGORY S : Subcontractor Assembly Site Subcontractor Test Site Assembly Process	Original	08-DEC-2000 17-Mar-2001 S21431 RYFV70 MTB8N50E MTB8N50ET4 MTP10N10E MTP10N10EL MTP10N40E MTP12N10E NTP3055AV NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent	PDF
CS5170 Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .	Original	SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control	PDF
IRF9310 Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional	Original	device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution	PDF
N-Channel JFET FETs Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17 Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are	Original	O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17	PDF
std2n52 Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232	Original	2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTP10N10EL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP10N10EL Logic Level TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high	OCR Scan	MTP10N10EL/D MTP10N10EL 21A-06	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TP 10N 10E TM O S IV P ow er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 10 AMPERES 100 VOLTS This a d va n ce d "E" se rie s of TM O S p o w e r M O S F E Ts is d e sig n e d	OCR Scan	MTP10N10E	PDF
MTP8P20 Abstract: MTP10N10M MTP8N18 MTP7N18 MTP7N20 MTP7P05 MTP7P06 MTP8N08 MTP8N10 MTP8N12 Text: M € f Ä * Vds or Vd g tí: « A V * £ fê (Ta=25^C) Vg s (V) Id Po * /CH * /CH Ig s s m (A) % S V g s (th) Id s s (nA) Vg s (V) Vd s (V) <UA) Id (nA) (V) (V) fê ÎDs(on) V:r>s= Vg s max min ft '14 CTa=25cC ) ÌD(on) Ciss g fs Coss ft Crss V g s =0 (max)	OCR Scan	MTP7N18 T0-220AB MTP7N20 O-220AB MTP7P05 MTP7P06 MTP10NI5 MTP8P20 MTP10N10M MTP8N18 MTP8N08 MTP8N10 MTP8N12	PDF

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MTP10N10E Price and Stock

onsemi MTP10N10ELG

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Motorola Semiconductor Products MTP10N10E

MTP10N10E Datasheets (17)

MTP10N10E Datasheets Context Search

AN569

Untitled

MTP10N10ELG

2N3904

MTP10N10E

Untitled

drive motor 10A with transistor P channel MOSFET

539 MOTOROLA transistor

K 741 MOSFET

MC68B21CP

mosfet cross reference

fqp60n06

transistor mosfet buv18a

mgb20n40cl

transistor marking code 12W SOT-23

NTP3055AV

CS5170

IRF9310

N-Channel JFET FETs

std2n52

Untitled

triac zd 607

Untitled

MTP8P20