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    MTM23223 Price and Stock

    Panasonic Electronic Components MTM232230L

    MOSFET N-CH 20V 4.5A SMINI3-G1
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    MTM232230L Digi-Reel 1
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    Panasonic Electronic Components MTM232230LBF

    MOSFET N CH 20V 4.5A SMINI3-G1-B
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    MTM23223 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTM23223 Panasonic Transistor Mosfet N-CH 20V 4.5A 3SMINI3-G1 Original PDF
    MTM232230L Panasonic Electronic Components Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 4.5A SMINI-3 Original PDF
    MTM232230LBF Panasonic Electronic Components Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N CH 20V 4.5A SMINI3-G1-B Original PDF

    MTM23223 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mtm231230

    Abstract: No abstract text available
    Text: Attains the industry’s lowest on-resistance with an SMini 2120 package size. Small, Low On-Resistance MOSFET Series „ Overview The new MTM23123/MTM23110/MTM23223/MTM23224 MOSFETs contribute to reduced dimensions and weight as well as lower power consumption for cellular phones, digital still cameras,


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    MTM23123/MTM23110/MTM23223/MTM23224 mtm231230 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal MTM23223 Silicon N-channel MOSFET For switching circuits Unit: mm 0.3+0.1 –0.0  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process (4.6 mΩ/mm /mm2) V Gate-source surrender voltage


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    MTM23223 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-12901 Revision. 3 Product Standards MOS FET MTM232230LBF MTM232230LBF Silicon N-channel MOS FET Unit : mm For switching 2.0 0.3 • Features 0.15 3 1.25 2.1  Low drain-source On-state resistance : RDS on typ = 20 m  (VGS = 4.0 V)  Low drive voltage: 2.5 V drive


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    TT4-EA-12901 MTM232230LBF UL-94 PDF

    mtm231230l

    Abstract: mtm231230
    Text: Attains the industry’s lowest on-resistance with an SMini 2120 package size. Small, Low On-Resistance MOSFET Series „ Overview The new MTM23123/MTM23110/MTM23223MOSFETs contribute to reduced dimensions and weight as well as lower power consumption for cellular phones, digital still cameras, digital video


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    MTM23123/MTM23110/MTM23223MOSFETs MTM23223 mtm231230l mtm231230 PDF

    Untitled

    Abstract: No abstract text available
    Text: MTM23223 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: MTM23223 Product type: MOS FET 3 1 2 Parameters *$ .SUBCKT MTM23223 1 2 3 M_M1 D 1 2 2 MTM23223 D_D1 23 DTM23223 D_D2 1D DGD D_D3 1X DZ Caution : Applicable D_D4 2X DZ R_R1


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    MTM23223 MTM23223 DTM23223 630E-9 30E-9 0E-12 30E12 PDF

    MTM23223

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal MTM23223 Silicon N-channel MOSFET For switching circuits Unit: mm 0.3+0.1 –0.0  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process V Gate-source surrender voltage VGSS ±10


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    MTM23223 MTM23223 PDF

    MTM23223

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) MTM23223 Silicon N-channel MOSFET For switching circuits Unit: mm 0.3+0.1 –0.0  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process


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    2002/95/EC) MTM23223 MTM23223 PDF

    MTM23223

    Abstract: No abstract text available
    Text: MTM23223 Silicon N-channel MOSFET For switching • Overview  Package  Code SMini3-G1-B  Pin Name 1: Gate 2: Source 3: Drain MTM23223 is N-channel MOS FET for load switch circuits.  Features  Low voltage drive 2.5 V, 4 V  Realization of low on-resistance, using extremely fine process


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    MTM23223 MTM23223 PDF

    MTM231230L

    Abstract: mtm231230 MTM23223 MTM23110 MTM23123 MTM23224
    Text: Attains the industry’s lowest on-resistance with an SMini 2120 package size. Small, Low On-Resistance MOSFET Series „ Overview The new MTM23123/MTM23110/MTM23223/MTM23224 MOSFETs contribute to reduced dimensions and weight as well as lower power consumption for cellular phones, digital still cameras,


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    MTM23123/MTM23110/MTM23223/MTM23224 MTM231230L mtm231230 MTM23223 MTM23110 MTM23123 MTM23224 PDF

    MTM23223

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal MTM23223 Silicon N-channel MOSFET For switching circuits • Features  Package  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process  Code SMini3-G1  Pin Name 1: Gate


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    MTM23223 MTM23223 PDF

    "N-Channel MOSFET"

    Abstract: MTM23223 mosfet low vgs mosfet low-voltage
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) MTM23223 Silicon N-channel MOSFET For switching circuits Unit: mm 0.3+0.1 –0.0  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process


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    2002/95/EC) MTM23223 "N-Channel MOSFET" MTM23223 mosfet low vgs mosfet low-voltage PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF

    MN864779

    Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
    Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.


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    A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY PDF