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    MTD10N08E Search Results

    MTD10N08E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MTD10N08E1 Motorola FET Transistor: TMOS IV Power Field Effect Transistor: N-Channel Enhancement-Mode DPAK for Surface Mount or Insertion Mount Original PDF

    MTD10N08E Datasheets Context Search

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    transistor IRF 630

    Abstract: MTD10N08E ym 238
    Text: MOTOROLA SC X S T R S /R F IME D I fc>3fci7254 QEH04a3 1 MOTOROLA I Order this data sheet by MTD10N08E/D E3 SEMICONDUCTOR TECHNICAL DATA MTD10N08E Designer's Data Sheet TM OS IV Pow er Field Effect Transistor IM-Channel Enhancement-Mode D PA K for Surface Mount or Insertion Mount


    OCR Scan     		PDF 3fci7254 QEH04a3 MTD10N08E/D MTD10N08E CM262 transistor IRF 630 MTD10N08E ym 238

    MBRD2060CT

    Abstract: MBRD20100CT MTD2955 sot-223 MLL34 mbrd20100
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b?2SM ODTbSSB 0 ■ M 0 Tb 7'''33V7 DPAK DEVICES (continued) TMOS Power MOSFETs Device » rPS(on¡ @ te Ohms Max Amp» *D(cont! Amps 4 6 6 5 0.4 1.5 1.5 0.7 0.3 0.25 0.5 0.6 0.6 0.12 0.6 0.15 0.18 0.3 0.1 0.6 0.4 1 0.5 0.5


    OCR Scan     		PDF MTD2N50 MTD1N50 MTD1N45 MTD1N40 MTD7N20 MTD2N20 MTD3P20* MTD4N20 MTD6N15 MTD6N10 MBRD2060CT MBRD20100CT MTD2955 sot-223 MLL34 mbrd20100