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    2MBI75UA-120

    Abstract: No abstract text available
    Text: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> 2 M B I7 5 U A - 1 2 0 Target specification This material and the information herein is the property of Fuji Slecmc Co .Ltd.They shall be neither reproduced, copied


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