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    2MBI300UD-120

    Abstract: No abstract text available
    Text: Fuji Hitachi Power Semiconductor Co.,Ltd IGBT Development Dept. Section M12 <TENTAT1VE> U -series 2 M B I3 0 0 U D -1 2 0 Target specification 1. Outline Drawing ( Unit : mm ) This ma lerĂ¯al and the Information herein is the property of Fuji Etectnc Co.Ltd.They shall be neither reproduced, copied,


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