4C4256
Abstract: No abstract text available
Text: M T4C4256 L 256K X 4 DRAM |V |IC Z R O N DRAM 256K x 4 DRAM FEATURES • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, tim ing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V +10% power supply
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T4C4256
512-cycle
MT4C4256)
MT4C4256
175mW
T4C4256L
20-Pin
4C4256
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MT4C4256DJ-7
Abstract: BBU RRH
Text: MT4C4256 L 256K X 4 DRAM I^ IIC Z R O N DRAM 256K x 4 DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process
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MT4C4256
512-cycle
MT4C4256)
175mW
MT4C4256L
200fiA
20-PIn
MT4C4256DJ-7
BBU RRH
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cc680
Abstract: No abstract text available
Text: M IC R O N 256K DRAM MT4C4258 X 4 DRAM 256K x 4 DRAM • DRAM STATIC COLUMN FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CM O S silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical
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MT4C4258
175mW
512-cycle
20-Pin
C1992,
MUC4258
cc680
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY I N C 55E D • b lllS M "! 0005737 bflS B U R N M T 4 C 4 2 5 6 883C 25 6 K X 4 D R A M l^ iic z R a r y 'T 'U L -y x -n MILITARY DRAM 256K X 4 DRAM FAST PAG E M O D E DRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-90617
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MIL-STD-883,
20-Pin
175mW
MT4C4298869C
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Untitled
Abstract: No abstract text available
Text: MT4C4256 L 256K X 4 DRAM I^IICRON DRAM 256K X 4 DRAM FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V +10% power supply • Low power, .3mW standby; 150mW active, typical
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MT4C4256
150mW
512-cycle
20-Pin
MT4C4256L
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K1992
Abstract: No abstract text available
Text: MT4C4256 L 2 56 K X 4 D R A M M IC R O N DRAM 256K X 4 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • Low power, .3mW standby; 150mW active, typical
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MT4C4256
150mW
512-cycle
20-Pin
125ps
K1992.
MT4C42S6
K1992
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MT4C4256DJ-7
Abstract: MT4C4256
Text: MICRON I MT4C4256 L 256K SeWCOWUCTOFl INC X 4 DRAM 256K X 4 DRAM DRAM FEATURES • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256L) • Industry-standard x4 pinout, timing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply
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MT4C4256
512-cycle
MT4C4256)
175mW
MT4C4256L
200nA
CYCLE24
MT4C4256DJ-7
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4C4256 VL 256K X 4 DRAM I^ICZRON 256K DRAM m 4 DRAM X D 3.3V, EXTENDED REFRESH 30 FEATURES • • • • • • • • • • • • > PIN A SSIG N M EN T Top View Best memory solution for 3.3V flat-panel controllers Single +3.3V ±5% pow er supply
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MT4C4256
512-cycle
125ms
MT4C42S«
MT4C42S6
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Untitled
Abstract: No abstract text available
Text: ¿_J. A L S T I N S E M I C O N D l 1O l í . _a INC DRAM ^ I? Í? 42?6JL8.35: 256K X 4 D R AM 256K X 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT (Top View • SM D 5962-90617 • M IL-STD-883 20-Pin DIP 20-Pin LCC
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IL-STD-883
20-Pin
512-cvcle
MIL-STD-883
MT4C42S6
OSOOOQ14
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