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    MT48H16M16LF Price and Stock

    Micron Technology Inc MT48H16M16LFBF-6:H

    IC DRAM 256MBIT PAR 54VFBGA
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    Micron Technology Inc MT48H16M16LFBF-75:H

    IC DRAM 256MBIT PAR 54VFBGA
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    Micron Technology Inc MT48H16M16LFBF-6 IT:H

    IC DRAM 256MBIT PAR 54VFBGA
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    Micron Technology Inc MT48H16M16LFBF-75 IT:H

    IC DRAM 256MBIT PAR 54VFBGA
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    Micron Technology Inc MT48H16M16LFBF-75:G TR

    IC DRAM 256MBIT PAR 54VFBGA
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    MT48H16M16LF Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MT48H16M16LF Micron 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Original PDF
    MT48H16M16LFBF-6:H Micron Technology Memory, Integrated Circuits (ICs), IC SDRAM 256MBIT 166MHZ 54VFBGA Original PDF
    MT48H16M16LFBF-6IT Micron Technology Memory, Integrated Circuits (ICs), IC SDRAM 256MBIT 166MHZ 54VFBGA Original PDF
    MT48H16M16LFBF-6 IT:H Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 256M PARALLEL 54VFBGA Original PDF
    MT48H16M16LFBF-75 Micron 256Mb Mobile SDRAM Original PDF
    MT48H16M16LFBF-75:G TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 256M PARALLEL 54VFBGA Original PDF
    MT48H16M16LFBF-75AT Micron Technology Memory, Integrated Circuits (ICs), IC SDRAM 256MBIT 132MHZ 54VFBGA Original PDF
    MT48H16M16LFBF-75 AT:G TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 256M PARALLEL 54VFBGA Original PDF
    MT48H16M16LFBF-75G Micron 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Original PDF
    MT48H16M16LFBF-75:G Micron Technology Memory, Integrated Circuits (ICs), IC SDRAM 256MBIT 132MHZ 54VFBGA Original PDF
    MT48H16M16LFBF-75 IT Micron 256Mb Mobile SDRAM Original PDF
    MT48H16M16LFBF-75IT Micron Technology Memory, Integrated Circuits (ICs), IC SDRAM 256MBIT 132MHZ 54VFBGA Original PDF
    MT48H16M16LFBF-75IT Micron Technology Memory, Integrated Circuits (ICs), IC SDRAM 256MBIT 133MHZ 54VFBGA Original PDF
    MT48H16M16LFBF-75 IT:G TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 256M PARALLEL 54VFBGA Original PDF
    MT48H16M16LFBF-75 IT:H Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 256M PARALLEL 54VFBGA Original PDF
    MT48H16M16LFBF-8 Micron 256Mb Mobile SDRAM Original PDF
    MT48H16M16LFBF-8 IT Micron 256Mb Mobile SDRAM Original PDF
    MT48H16M16LFFG Micron MOBILE SDRAM Original PDF
    MT48H16M16LFFG-10 Micron 16Meg x 16 x 4 banks 1.8V mobile SDRAM Original PDF
    MT48H16M16LFFG-10 Micron MOBILE SDRAM Original PDF

    MT48H16M16LF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT48H16M16LFFG

    Abstract: MT48V16M16LFFG
    Text: ADVANCE‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM MT48V16M16LFFG, MT48H16M16LFFG– 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES • Temperature Compensated Self Refresh TCSR


    Original     		PDF 256Mb: MT48V16M16LFFG, MT48H16M16LFFG­ 192-cycle 54-ball, MobileRamY26L MT48H16M16LFFG MT48V16M16LFFG

    TSOP 54 PIN

    Abstract: MT48LC16M16LFTG
    Text: PRELIMINARY‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM MT48LC16LFFG, MT48LC16M16LFBG, MT48V16MLFFG, MT48V16M16LFBG, MT48H16M16LFFG, MT48H16M16LFBG 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds


    Original     		PDF 256Mb: 192-cycle MT48LC16LFFG, MT48LC16M16LFBG, MT48V16MLFFG, MT48V16M16LFBG, MT48H16M16LFFG, MT48H16M16LFBG MobileRamY26L TSOP 54 PIN MT48LC16M16LFTG

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF 09005aef834c13d2

    mt48h8m32lfb5-75lit

    Abstract: 256Mb MT48 MT48H16M16LF MT48H8M32LF mt48h8m32lfb5 rev g
    Text: 256Mb: x16, x32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Table 1: • Fully synchronous; all signals registered on positive edge of system clock • VDD/VDDQ = 1.70–1.95V • Internal, pipelined operation; column address can


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF 09005aef8219eeeb/Source: 09005aef8219eedd mt48h8m32lfb5-75lit 256Mb MT48 MT48H16M16LF MT48H8M32LF mt48h8m32lfb5 rev g

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Features Table 1: • Fully synchronous; all signals registered on positive


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF 09005aef8219eedd/ 09005aef8219eeeb MT48H16M16LF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM MT48V16M16LFFG, MT48H16M16LFFG– 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES • Temperature Compensated Self Refresh TCSR


    Original     		PDF 256Mb: MT48V16M16LFFG, MT48H16M16LFFG­ 192-cycle 54-ball, MobileRamY26L

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: 16 Meg x 16, 8 Meg x 32Mobile SDRAM Features Mobile LPSDR MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock


    Original     		PDF 256Mb: 32Mobile MT48H16M16LF MT48H8M32LF 09005aef834c13d2/Source: 09005aef83452523

    smd transistor marking A10

    Abstract: truth table for 8 to 3 decoder AH MARKING SMD MARKING CODE A12 smd marking g8 MT48 MT48H16M16LF MT48H8M32LF BA1A11
    Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Table 1: • Fully synchronous; all signals registered on positive edge of system clock • VDD/VDDQ = 1.70–1.95V


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF 09005aef8219eeeb/Source: 09005aef8219eedd MT48H16M16LF smd transistor marking A10 truth table for 8 to 3 decoder AH MARKING SMD MARKING CODE A12 smd marking g8 MT48 MT48H8M32LF BA1A11

    MT48H16M16LF

    Abstract: MT48H8M32LF
    Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF 54-ball 90-ball 09005aef834c13d2 MT48H16M16LF MT48H8M32LF

    MT48H16M16LFBF

    Abstract: No abstract text available
    Text: Preview 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/products/dram/mobile Features


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF 09005aef8175ed0d/09005aef8175ed22 256Mb MT48H16M16LFBF

    Mobile SDRAM

    Abstract: MT48H16M16LFFG
    Text: PRELIMINARY‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM MT48LC16LFFG, MT48LC16M16LFBG, MT48V16MLFFG, MT48V16M16LFBG, MT48H16M16LFFG, MT48H16M16LFBG 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds


    Original     		PDF 256Mb: MT48LC16LFFG, MT48LC16M16LFBG, MT48V16MLFFG, MT48V16M16LFBG, MT48H16M16LFFG, MT48H16M16LFBG 192-cycle MobileRamY26L Mobile SDRAM MT48H16M16LFFG

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features Table 1: • Fully synchronous; all signals registered on positive


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF Deep900 09005aef8219eedd/ 09005aef8219eeeb MT48H16M16LF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Features Table 1:


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF 09005aef8219eedd/ 09005aef8219eeeb MT48H16M16LF

    54 ball vfbga

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 Mobile LPSDR SDRAM AT Addendum Features Mobile LPSDR SDRAM AT Addendum MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Table 1: • Automotive temperature AT range


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF 09005aef8405171d/Source: 09005aef837e9707 54 ball vfbga

    256Mb

    Abstract: MT48H16M16LF MT48H8M32LF 48H16M16
    Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF 54-ball 90-ball 09005aef834c13d2 256Mb MT48H16M16LF MT48H8M32LF 48H16M16

    D207

    Abstract: No abstract text available
    Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Table 1: • Fully synchronous; all signals registered on positive edge of system clock • VDD/VDDQ = 1.70–1.95V


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF 09005aef8219eedd/ 09005aef8219eeeb MT48H16M16LF D207

    E5 MARKING

    Abstract: No abstract text available
    Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF 09005aef834c13d2 E5 MARKING

    7SDMM-B0-2211-A

    Abstract: 980020-48-P2 mt29f2g08aadwp connector 7sdmm-b0-2211 MT29F8G08AAAWP MT29F8G08A MT29F2G08AAD BSS138 NXP 7SDMM 7SDMM-B0-2211
    Text: SCH-VAL314x-01 00 NXP Semiconductors LPC314x Validation Board Schematics 1 05 Review cleanup and Layout quotation 07/20/08 01 REFDES re-ordered; Release for Assembly 08/14/08 02 Corrected EBI Static nCS1 Addrs Space table, sht 13 10/16/08 03 Change pull-up value on GPIO0, GPIO1


    Original     		PDF SCH-VAL314x-01 LPC314x LPC3143 GPIO19; GPIO20 7SDMM-B0-2211-A 980020-48-P2 mt29f2g08aadwp connector 7sdmm-b0-2211 MT29F8G08AAAWP MT29F8G08A MT29F2G08AAD BSS138 NXP 7SDMM 7SDMM-B0-2211

    980020-48-P2

    Abstract: 7SDMM-B0-2211-A MT29F8G08AAAWP mt29f2g08aadwp MT29F8G08A 7SDMM-B0-2211 MT29F2G08AAD 7SDMM MT29F4G08ABCWC MT29F4G08ABCWC-et
    Text: SCH-VAL313x-01 01 NXP Semiconductors LPC313x Validation Board Schematics 1 05 Initial release 09/29/08 02 Corrected EBI Static nCS1 Addrs Space table, sht 13 10/16/08 03 Change pull-up value on GPIO0, GPIO1 & GPIO2 to 4.7k; sht 7 01/22/09 04 Tie LPC313x pin K11 to SUP3;


    Original     		PDF SCH-VAL313x-01 LPC313x LPC314x GPIO19; GPIO20 980020-48-P2 7SDMM-B0-2211-A MT29F8G08AAAWP mt29f2g08aadwp MT29F8G08A 7SDMM-B0-2211 MT29F2G08AAD 7SDMM MT29F4G08ABCWC MT29F4G08ABCWC-et

    for lpc3180

    Abstract: UM10198 PLL397 Philips power supply PE 1957 8044 8048 microcontroller role in keyboard interface nand flash algorithm, arm9, micron LM 4088 hynix nand PROGRAMMING K9K1208Q0C
    Text: UM10198 LPC3180 User Manual Rev. 01 — 6 June 2006 Document information Info Content Keywords LPC3180; ARM9; 16/32-bit ARM microcontroller Abstract User manual for LPC3180 User manual UM10198 Philips Semiconductors LPC3180 User Manual Revision history Rev


    Original     		PDF UM10198 LPC3180 LPC3180; 16/32-bit LPC3180 UM10198 for lpc3180 PLL397 Philips power supply PE 1957 8044 8048 microcontroller role in keyboard interface nand flash algorithm, arm9, micron LM 4088 hynix nand PROGRAMMING K9K1208Q0C

    Optimizing Power Consumption of AT91SAM9261-based Systems

    Abstract: mt48lc16m16a2-75 dhrystone AT91SAM9261 AT91SAM9261-based ARM926 ARM926EJ-S MT48LC16M16A2
    Text: Optimizing Power Consumption of AT91SAM9261-based Systems Scope Power consumption, in a CMOS device, has a dynamic power component while it is operating switching , and a static power component while it is not operating but still powered (non-switching state). The static power (leakage power) dissipation also


    Original     		PDF AT91SAM9261-based AT91SAM9261 23-Nov-06 Optimizing Power Consumption of AT91SAM9261-based Systems mt48lc16m16a2-75 dhrystone ARM926 ARM926EJ-S MT48LC16M16A2

    Transistor mlc 8050

    Abstract: hynix nand naming rule xtal mco 8100 30591 DRIVER IC encoder 80058 MLC 8050 mlc 8050 38 mic pin configuration crc-103 80058 ENCODER MICREL MIC marking
    Text: D D R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D User manual D Rev. 1.02 — 17 March 2010 R R R LPC32x0 and LPC32x0/01 User manual D D D UM10326 D FT FT A A R R D D D R A FT D R A


    Original     		PDF UM10326 LPC32x0 LPC32x0/01 LPC3220, LPC3230, LPC3240, LPC3250, LPC3220/01, LPC3230/01, LPC3240/01, Transistor mlc 8050 hynix nand naming rule xtal mco 8100 30591 DRIVER IC encoder 80058 MLC 8050 mlc 8050 38 mic pin configuration crc-103 80058 ENCODER MICREL MIC marking

    intel 8008 cpu

    Abstract: No abstract text available
    Text: UM10326 LPC32x0 and LPC32x0/01 User manual Rev. 3 — 22 July 2011 User manual Document information Info Content Keywords LPC3220, LPC3230, LPC3240, LPC3250, ARM9, LPC3220/01, LPC3230/01, LPC3240/01, LPC3250/01, 16/32-bit ARM microcontroller. Abstract User manual for LPC32x0.


    Original     		PDF UM10326 LPC32x0 LPC32x0/01 LPC3220, LPC3230, LPC3240, LPC3250, LPC3220/01, LPC3230/01, LPC3240/01, intel 8008 cpu

    MT8LSDT3264HI-133

    Abstract: PC133 tsop 8X14 MT48LC16M16A2TG MT48LC4M32B2TG MT48LC4M32B2F5 MT48H32M16LF MT48LC8M32B2 MT48LC2M32B2TG MT48LC32M8A2TG
    Text: Industrial Temperature DRAM Micron’s Industrial Temperature DRAM For Ultimate Performance Under Extreme Conditions For products operating at temperatures ranging from -40°C to +85°C, Micron Technology’s extensive line of industrial temperature IT DRAM provides outstanding performance and proven reliability. We


    Original     		PDF 256MB MT8LSDT3264HI-133 PC133 tsop 8X14 MT48LC16M16A2TG MT48LC4M32B2TG MT48LC4M32B2F5 MT48H32M16LF MT48LC8M32B2 MT48LC2M32B2TG MT48LC32M8A2TG