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    MT45W1MW16MBP23Z

    Abstract: MT45W4MW16MBP25Z PSRAM MT45W2MW16MBP24A
    Text: TN-45-06: Density Migration for x16 Burst Multiplexed PSRAM Introduction Technical Note Density Migration for x16 Burst Multiplexed PSRAM Die Introduction The Micron family of PSRAM devices is offered in several densities and in the following options: async/page, async/page/burst, and x16 burst multiplexed.


    Original     		TN-45-06: 09005aef81e31352/Source: 09005aef81df76e2 tn4506 MT45W1MW16MBP23Z MT45W4MW16MBP25Z PSRAM MT45W2MW16MBP24A PDF

    MT45W4MW16MBP25Z

    Abstract: 000D MT45W1MW16MBP23Z MT45W2MW16MBP24Z
    Text: TN-45-15: Row Boundary Crossing Functionality Introduction Technical Note Row Boundary Crossing Functionality in CellularRAM Memory Introduction Micron’s CellularRAM® devices are designed to be backward-compatible with 6T SRAM and early-generation asynchronous and page PSRAM, and are based on a fixed row size.


    Original     		TN-45-15: MT45W512KW16BE) MT45W2MW16B) MT45W2MW16MBP24A" MT45W2MW16MBP24Z" 09005aef820db72a/Source: 09005aef820db6f3 MT45W4MW16MBP25Z 000D MT45W1MW16MBP23Z MT45W2MW16MBP24Z PDF