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Abstract: No abstract text available
Text: T O SH IB A TENTATIVE MT3S03S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03S V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise : Figure : NF = Unit in mm 1.6 ± 0.2 1.4 dB 10.8 ± 0 .1| High Gain : Gain = MAXIMUM RATINGS Ta 8 =
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MT3S03S
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE MT3S03S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE M T3 S 0 3 S V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise : Figure : NF = 1.4 dB • High Gain : Gain = 8 dB f = 2 GHz U nit in mm MAXIMUM RATINGS (Ta = 25°C)
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MT3S03S
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MT3S03S
Abstract: No abstract text available
Text: TOSHIBA MT3S03S TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03S Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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MT3S03S
MT3S03S
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Abstract: No abstract text available
Text: T O S H IB A MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES
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MT6L52AE
MT3S03S
MT3S04AS
MT3S03T)
MT3S04AT)
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES
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MT6L52AE
MT3S03S
MT3S04AS
MT3S03T)
MT3S04AT)
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