MT28F800B1T
Abstract: No abstract text available
Text: PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY MT28F800B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks
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Original
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PDF
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MT28F800B1
44-Pin
16KB/8K-word
100ns,
110ns
MT28F800B1T
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Untitled
Abstract: No abstract text available
Text: OBSOLETE PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY MT28F800B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (B-1) • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks
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Original
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PDF
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MT28F800B1
44-Pin
16KB/8K-word
110ns
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY M IC R O N FLASH MEMORY MT28F800B1 martV o ltag e FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected Two 8KB/4K-word parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT):
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OCR Scan
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PDF
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MT28F800B1
16KB/8K-word
100ns
110ns,
150ns
48-PIN
0020bfl2
80-PIN
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marking code 2t7
Abstract: No abstract text available
Text: ADVANCE MT28F800B1 512K x 16,1 MEG x 8 FLASH MEMORY MICRON I QUANTUM DEVICES, MC. FLASH MEMORY 512K x 16,1 MEG x 8 S mart FEATURES oltage 44 3 R P* A ïs C 2 43 3 W E * At 7 C 3 42 □ AS A7 C 4 41 ] A9 A6 C S 40 ] A10 AS C 6 39 3 A 11 A4 C 7 38 3 A 12 A3 C 8
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OCR Scan
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PDF
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MT28F800B1
48-Pin
MT2BF800B1
marking code 2t7
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SOT-23 ASE
Abstract: No abstract text available
Text: ADVANCE MT28F800B1 512K x 16. 1 MEG x 8 FLASH M EM ORY I^ IIC R O N FLASH MEMORY 512K x 1 6 ,1 MEG x 8 BOOT BLOCK FEATURES • Eleven erase blocks: 16K B/8K -w ord boot block protected Tw o 8K B/4K -w ord param eter blocks Eight main m emory blocks • Deep Power-Down Mode: 8|iA at 5V V cc; 8(lA at
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OCR Scan
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PDF
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MT28F800B1
100ns
110ns,
150ns
16-bit
SOT-23 ASE
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Untitled
Abstract: No abstract text available
Text: PRELIM INARY p i l C R Q ’ i! r\ v. '’ t- f M !. I i ü ü ? \ FLASH MEMORY h L. A b i ' 1 ’ IYIBG x rf i„IE i\,1 0 h V MT28F800B1 FEATURES • Eleven erase blocks: 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Eight main memory blocks
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OCR Scan
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PDF
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16KB/8K-word
100ns
110ns,
150ns
MT28F800B1
16-bit
GT997,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON I 512Kx 16,1 MEG x 8 BOOT BLOCK FLASH MEMORY QUANTUM DEVICES, INC. FLASH MEMORY MT28F8o°B1 S m artV FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word param eter blocks
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OCR Scan
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PDF
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512Kx
16KB/8K-word
110ns
MT28F8o
44-Pin
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Micron Quantum Devices
Abstract: No abstract text available
Text: ADVANCE MT28F800B1 512K x 16,1 MEG x 8 FLASH MEMORY M IC R O N I QkMMVUMMHBMlM G> FLASH MEMORY 512K x 16, 1 MEG x 8 S mart V oltage , FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Eleven erase blocks: 16K B /8K -w ord b o o t block (protected) T w o 8K B /4K -w ord p ara m e te r blocks
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OCR Scan
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PDF
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MT28F800B1
100ns
110ns,
150ns
576x8
48-PIN
MT2SF80081
Micron Quantum Devices
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