MT1259 DRAM Search Results

MT1259 DRAM Result Highlights (6)

Part	ECAD Model	Manufacturer	Description	Download	Buy
UPD48011318FF-FH16-FF1-A		Renesas Electronics Corporation	Low Latency DRAM, T-LBGA, /Tray
UPD48011436FF-FH12-FF1-A		Renesas Electronics Corporation	Low Latency DRAM, T-LBGA, /Tray
UPD48011336FF-FH16-FF1-A		Renesas Electronics Corporation	Low Latency DRAM, T-LBGA, /Tray
UPD48011418FF-FH12-FF1-A		Renesas Electronics Corporation	Low Latency DRAM, T-LBGA, /Tray
UPD48288218AFF-E24-DW1		Renesas Electronics Corporation	Low Latency DRAM, T-TFBGA, /Tray
UPD48288118AFF-E24-DW1-A		Renesas Electronics Corporation	Low Latency DRAM, T-TFBGA, /Tray

MT1259 DRAM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MICRON TECHNOLOGY INC 17E D blllS41 MICRON • Kcmaii Me MT1259 883C MILITARY DRAM 256K X 1 DRAM T < K ,-25.- iS DRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-85152 • JAN M38510/246 16L/300 DIP (D-2) FEATURES *A8C 1-W 16	OCR Scan	PDF	blllS41 MT1259 M38510/246 16L/300 150mW 00Q173S- T-46-23 MIL-STD-883
Untitled Abstract: No abstract text available Text: I^ IIC R O N MT1259 256K X 1 DRAM PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard pinout, timing and functions • All inputs, outputs, and clocks are fully TTL compat ible • Single +5V±10% power supply • Low power, 15mW standby; 150mW active, typical	OCR Scan	PDF	MT1259 150mW 256-cycle 16-Pin 100ns 120ns 150ns
"24 pin" DRAM Abstract: x 1-Bit Dynamic RAM Text: / 2>É M ICRON I 005727 TECHNOLOGY. INC. 2805 East C olu m b ia Road Boise, Idaho 83706 TEL. 208 386-3900 TW X 910-970-5973 7 S (Micron 1 MEG PIN COMPATIBLE DRAM Family) 262,144 65,536 MT1259-P MT4067-P X X Q u a lity • P e rfo rm a n c e • S e rv ic e	OCR Scan	PDF	MT1259-P MT4067-P 100ns 120ns 150ns 1259P 4067P MT1259P/MT4067P "24 pin" DRAM x 1-Bit Dynamic RAM
mti259zp Abstract: ZIP DRAM Text: / 2>É MICRON 005727 S I? I TECHNOLOGY, INC. 2805 East Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 TWX 910-970-5973 7 (Micron 1 MEG PIN COMPATIBLE DRAM Family) Q u a lity • P e rfo rm a n c e • S e rv ic e 262,144 65,536 MT1259-P MT4067-P X X	OCR Scan	PDF	MT1259-P MT4067-P 1259P 4067P MT1259P/MT4067P mti259zp ZIP DRAM
MT1259 Abstract: No abstract text available Text: \|U\|IC=RON MT1259 883C AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-85152 • JAN M 38510/246 • MIL-STD-883, Class B 16L/300 DIP (D-2) *A8t 1 M e DC 2 15 W E [ 3 14 RASC 4 13 A 0[ 5 12 A 2[ 6 11 A1 [ 7 10 9 VccC 8 FEATURES • Industry standard pinout and timing	OCR Scan	PDF	MT1259 MIL-STD-883, 16L/300 150mW 256-cycle MIL-STD-883
30-pin simm memory Abstract: 30-pin SIMM RAM MT1259 30-pin SIMM Text: MICRON I 79 I ? ? 1 / TECHNOLOGY. MC. 2805 Easi Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 TWX 910-970-5973 FAX (208) 343-2536 MTB8512DM ^ ^ Z//^ Ì1 2 K x 0>BIT DYNAMIC RAM J V IT B 9 5 1 2 D M ^ ^ y ^ ^ 1 2 K x $ B \T DYNAMIC RAM Performance • Service	OCR Scan	PDF	MTB8512DM 30-pin MTB8512DM/MTB9512DM MT1259 MTB8512DM/MT89512DM T1259EJ 30-pin simm memory 30-pin SIMM RAM 30-pin SIMM
MT1259 Abstract: CS31 MT88512DN MT89512DN Text: mirn MICRON I TECHNOLOGY INC. J 2805 East Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 TW X 910-970-5973 FAX (208) 343-2536 T 8 8 5 1 2 D N ^ cc /^ 5 1 2 K x 8 BIT DYNAMIC RAM Y 1MT89512DN ytce*@12K x 9 BIT DYNAMIC RAM ( jM ity • P e rfo rm a n c e • S e rv ic e	OCR Scan	PDF	T88512DN^ MT89512DN 30-pin MT88512DN/MT89512DN MT1259 CS31 MT88512DN MT89512DN
30-pin simm memory Abstract: SIMM 30-pin MT1259 30-pin SIMM RAM 30 pin simm "30 pin simm" J411 30 pin simm memory N 005719 simm 30-pin 9-bit Text: ci' m99 1?P' u m/ à i iœ MICRON v rv • 'T v TECHNOLOGY. MC. 2805 Easi Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 TWX 910-970-5973 FAX (208) 343-2536 MTB8512DM ^ ^ Z/^ 5 1 2 K x 8)BIT DYNAMIC RAM J V IT B 9 5 1 2 D M ^ ^ y ^ g g ^ 1 2 K x ¿)BIT DYNAMIC RAM	OCR Scan	PDF	MTB8512DM JVITB9512DM^ 30-pin 30-pin simm memory SIMM 30-pin MT1259 30-pin SIMM RAM 30 pin simm "30 pin simm" J411 30 pin simm memory N 005719 simm 30-pin 9-bit
U18 524 Abstract: No abstract text available Text: B Y i â i C a n H D MICRON D I TECHNOLOGY. INC. 2805 East C olu m bia Road z^txIVI"T88512DN/ MT89512DN / ’ /W(5VK x 8 BIT DYNAMIC RAM /r '" -'^Ci^r>lr x v °9 DIT n vM A uir RAM dam * , vfe08X^12K BIT DYNAMIC Boise, Idaho 83706 TEL. (208 386-3900 Y TW X 910-970-5973	OCR Scan	PDF	T88512DN/ MT89512DN vfe08X 30-pin U18 524
MT4264 Abstract: 4264 dram MT4264A MT1259 Micron MT4264 Text: \|U \|IC = l= IO N M T4264 X 1 DRAM PAGE MODE FEA TU R ES • • • • • • • • PIN ASSIGNMENT Top View Industry stan dard pinout, functions and timing Single +5V ±10% pow er supply Low pow er, 15mW standby; 75mW active, typical C om m on I /O usin g EARLY-WRITE	OCR Scan	PDF	MT4264 256-cycle MT1259 16-Pin 100ns 120ns 150ns 200ns MT4264 4264 dram MT4264A MT1259 Micron MT4264
mt1259 Abstract: MT1259 dram Text: M T1259 883C cron AVAILABLE A S MILITARY SPECIFICATIONS 1 DRAM PIN ASSIGNMENT Top View • SM D 5962-85152 • JA N M 38510/246 • MIL-STD-883, C lass B 16L/300 DIP (D-2) *A8C 1 M e ] V ss DÜ 2 15 ÜCÄS WEE 3 14 ] Q R A S t 4 13 ] A6 A0[ 5 12 ] A3 11 : a 4	OCR Scan	PDF	MT1259 M38510/246 MIL-STD-883, 150mW 256-cycle 100ns 120ns 150ns MIL-STD-883 MT1259 dram
Untitled Abstract: No abstract text available Text: \| U \| IC R O N MT4264 1 DRAM X PA G E MODE FEATURES • • • • • • • • PIN ASSIGNMENT Top View Industry standard pinout, functions and timing Single +5V ±10% power supply Low power, 15mW standby; 75mW active, typical Common I /O using EARLY-WRITE	OCR Scan	PDF	MT4264 256-cycle MT1259 16-Pin 100ns 120ns 150ns 200ns MT4264
MT1259 dram Abstract: MT1259 ea5 marking Text: ic n o N M T1259 256K x 1 DRAM PAGE MODE FEA TU R ES PIN ASSIGNMENT Top View • Industry standard pinout, tim ing an d functions • All inputs, outputs, and clocks are fully TTL com pat ible • Single +5V±10% pow er supp ly • Low pow er, 15mW standby; 150mW active, typical	OCR Scan	PDF	MT1259 150mW 256-cycle 100ns 120ns 150ns MT1259 144bits MT1259 dram ea5 marking