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OKI Semiconductor MSM514400A-70SJ 1M X 4 FAST PAGE DRAM, 70 NS, PDSO20
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Quest Components	MSM514400A-70SJ		8			1 - 10 - 100 - 1000 - 10000 -	Buy Now

MSM514400A Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
MSM514400A-10		OKI Semiconductor	1,048,576-word x 4-Bit Dynamic RAM, Fast Page Mode		Original	PDF
MSM514400A-70		OKI Semiconductor	1,048,576-word x 4-Bit Dynamic RAM, Fast Page Mode		Original	PDF
MSM514400A-80		OKI Semiconductor	1,048,576-word x 4-Bit Dynamic RAM, Fast Page Mode		Original	PDF
MSM514400AL-10		OKI Semiconductor	1,048,576-word x 4-Bit Dynamic RAM, Fast Page Mode		Original	PDF
MSM514400AL-70		OKI Semiconductor	1,048,576-word x 4-Bit Dynamic RAM, Fast Page Mode		Original	PDF
MSM514400AL-80		OKI Semiconductor	1,048,576-word x 4-Bit Dynamic RAM, Fast Page Mode		Original	PDF

MSM514400A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MSM514400ASJ-70 IL22D C-MOS 4 M 1,048,576 x 4 -BIT DRAM —TOP VIEW— 5 DQ1 I/O 1 GND 26 18 17 DQ2 I/O 2 25 DQ4 I/O 16 15 WE IN 3 24 DQ3 I/O 14 12 RAS IN 4 23 CAS IN 11 10 22 OE IN A9 IN 5 9 3 22 A0 IN 9 4 18 A8 IN 23 A1 IN 10 17 A7 IN A2 IN 11 16 A6 IN	Original	PDF	MSM514400ASJ-70 IL22D
MSM6389B Abstract: dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591 Text: Discontinuation Products List P/N MD56V62160 Replacement if any Category P/N Replacement (if any) Category MD56V62160E (under DRAM develop) MSM514223B P/N Replacement (if any)Category ASM MSM51C2800 DRAM ASM MSM51C2800 DRAM ASM MSM51C4256 DRAM ML62882A MCU	Original	PDF	MD56V62160 MD56V62160E MSM514223B MSM51C2800 MSM51C4256 ML62882A MSM51 4223C ML62886 MSM6389B dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591
Untitled Abstract: No abstract text available Text: O K I Semiconductor MSM5 14400A/AL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400A/AL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.	OCR Scan	PDF	4400A/AL 576-Word MSM514400A/AL cycles/16ms, cycles/128ms MSM514400A/AL b724240
EJ350 Abstract: No abstract text available Text: O K I semiconductor MSM514400A/AL_ 1,048,576-Word x 4-Bit DYNAM IC RAM: FA ST PAG E MODE T Y P E GENERAL DESCRIPTION The M SM 514400A/A L is a new g en e ra tio n dynam ic RAM o rg a n ize d as 1,048,576-word x 4-bit. Th e te c h n o lo g y used to fa b ric a te th e M SM 5 1 4 4 0 0 A /A L is O K I's CM O S s ilico n g a te process	OCR Scan	PDF	MSM514400A/AL_ 576-Word 14400A/A 576-w 26-pin 20pin uMSM514400A/AL MSM514400A/AL" EJ350
Untitled Abstract: No abstract text available Text: O K I Semiconductor MSM514 4 1 OA/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE WRITE PER BIT MODE TYPE DESCRIPTION The MSM514410A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.	OCR Scan	PDF	MSM514 576-Word MSM514410A/AL 576-w MSM514400A/AL cycles/16ms, cycles/128ms b724240 MSM51441OA/AL
Untitled Abstract: No abstract text available Text: O K I semiconductor MSM514400A_ 1,048,576-WQRDx 4-BIT D Y N A M IC RAM : FAST PAGE M O D E TYPE GENERAL DESCRIPTION The M S M 5 1 4 4 0 0 A is a n e w g e n e ra tio n d yn a m ic R A M o rg a n iz e d as 1,048,576 w o rd s b y 4 bits.	OCR Scan	PDF	MSM514400A_ 576-WQRDx
Untitled Abstract: No abstract text available Text: O K I semiconductor MSM514400 A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM: FA ST PAG E MODE T Y P E GENERAL DESCRIPTION The MSM514400A/AL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The tech nology used to fabricate the M SM 514400A/AL is O KI's CMOS silicon gate process	OCR Scan	PDF	MSM514400 576-Word MSM514400A/AL 14400A/AL MSM514400A/AL" MSM514400A
ZIP2Q-P-400-W1 Abstract: MSM514400A Text: O K I Semiconductor MSM51441OA/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE WRITE PER BIT MODE TYPE DESCRIPTION The MSM514410A/ AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.	OCR Scan	PDF	MSM514410A MSM514410AL 576-Word MSM514410A/ 576-w MSM514400A/AL cycles/16ms, cycles/128ms MSM514410A/AL ZIP2Q-P-400-W1 MSM514400A
Untitled Abstract: No abstract text available Text: Semiconductor OKI MSC23S132-XXBS8/PS8 1,048,576-Word x 32-Bit DRAM MODULE: FAST PAGE MODE GENERAL DESCRIPTION 0.2 ¿iF decoupling capacitors on a 72-pin glass epoxy Single-In-Line Package supports applications where high density and large capacity of storage memory are required.	OCR Scan	PDF	MSC23S132-XXBS8/PS8 576-Word 32-Bit 72-pin MSC23S132-xxBS8 MSM514400A)
20-PIN Abstract: 26-PIN ZIP20-P-400-W1 Text: O K I Sem iconductor MSM5 14 4 0 0 A/AL 1,048,576-W ord x 4 -B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION c v -siu v iu s silicon gate proce The device operates at a single 5V power supply. Its I/O pins are TTL compatible. FEATURES	OCR Scan	PDF	MSM514400A/AL_ 576-Word MSM514400A/AL cycles/16ms, cycles/128ms MSM514400A/AL 20-PIN 26-PIN ZIP20-P-400-W1
Untitled Abstract: No abstract text available Text: O K I S em ico n d u cto r M SC23132-X X BS8/PS8 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE GENERAL DESCRIPTION 0.2 ¡¿F decoupling capacitors on a 72-pin glass epoxy Single-In-Line Package supports applications where high density and large capacity of storage memory are required.	OCR Scan	PDF	SC23132-X 576-Word 32-Bit 72-pin MSC23132-xxBS8/DS8 MSM514400A)