IR125
Abstract: DO-217AA 217A MSARS50S20Y PS11 VF10 VF11 VF12 MSARS50S20YS-1 C7001
Text: 8700 E. Thom as Road Scottsdale, AZ 85252 PH: 480 941-6300 FAX: (714) 372-8459 MSARS50S20Y MSARS50S20YR Features • • • • • • • • passivated mesa structure for very low leakage currents Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic
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MSARS50S20Y
MSARS50S20YR
MSARS50S20Y)
MSARS50S20YR)
MSARS50S20YS-1
IR125
DO-217AA
217A
MSARS50S20Y
PS11
VF10
VF11
VF12
MSARS50S20YS-1
C7001
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MSARS50S20RY
Abstract: MSARS50S20X MSARS50S20Y VF10 VF11 VF12 MSARS50S20RX
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSARS50S20X,Y MSARS50S20RX,Y Features PRELIMINARY • passivated mesa structure for very low leakage currents • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic (MSARS50S20Y and
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MSARS50S20X
MSARS50S20RX
MSARS50S20Y
MSARS50S20RY)
MSARS50S20RX)
MSARS50S20X,
MSARS50S20RX,
100deg
125deg
MSARS50S20RY
VF10
VF11
VF12
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Untitled
Abstract: No abstract text available
Text: 8700 E. Thom as Road Scottsdale, AZ 85252 PH: 480 941-6300 FAX: (714) 372-8459 MSARS50S20Y MSARS50S20YR Features • • • • • • • • passivated mesa structure for very low leakage currents Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic
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MSARS50S20Y
MSARS50S20YR
MSARS50S20Y)
MSARS50S20YR)
MSARS50S20YS-1
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MM158
Abstract: MSARS50S20Y PS11 VC10
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Features MM158 PRELIMINARY • Designed for use with NiH battery cells on spacecraft • Thermally activated non-dissipative permanent battery bypass • Charge/discharge diodes are replaced by a permanent
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MM158
MSARS50S20Y
300ms
MM158
PS11
VC10
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UM1002
Abstract: 1000 volt mosfet 24501 1N5822 MSARS50S20Y SA01 SA02 SOIC-16 RGP30 24498
Text: Spring/Summer 1998 conditioning Sintered Glass Rectifiers Microsemi Chatsworth, under an exclusive agreement with Gulf Semiconductor of MSASC150H45H Surface Mount Power Schottkys China, is now offering a competitive solution to General Semiconductor's Super
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MSASC150H45H
USB08
UM1002
1000 volt mosfet
24501
1N5822
MSARS50S20Y
SA01
SA02
SOIC-16
RGP30
24498
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Untitled
Abstract: No abstract text available
Text: Microsemi • m u Santa Ana, CA progress Pow ersti ay recnnorogy m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSARS50S20X,Y MSARS50S20RX,Y Features • • • • • • 200 Volts 50 Amps passivated mesa structure for very low leakage currents
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MSARS50S20X
MSARS50S20RX
MSARS50S20Y
MSARS50S20RY)
MSARS50S20RX)
MSARS50S20X,
MSARS50S20RX,
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Untitled
Abstract: No abstract text available
Text: Micmsemi m m m Santa Ana, CA Progress Powered Oy Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSARS50S20X,Y MSARS50S20RX,Y Features • • • • • • 200 Volts 50 Amps passivated mesa structure for very low leakage currents
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PDF
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MSARS50S20X
MSARS50S20RX
MSARS50S20Y
MSARS50S20RY)
MSARS50S20RX)
MSARS50S20X,
MSARS50S20RX,
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