MS8251
Abstract: P2613 schottky diodes Anti parallel P261
Text: GaAs Schottky Diodes TM Flip Chip Anti Parallel Low CT MS8251 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7 Typ.) ● Cut-Off Frequency > 500 GHz
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MS8251
P2920
MS8251-P2920
x10-13
MS8251
P2613
schottky diodes Anti parallel
P261
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODES Silicon Low Barrier TM MS8250 – 48 Features For Detector and Mixer Applications Vertical Offset Contact Low Capacitance Package 0.09 pF Available as Bondable Chips Priced for Commercial Applications Specifications @ 25°C Description
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MS8250
MS8520-48
MS8250
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MS8250
Abstract: P2613
Text: GaAs Schottky Diodes Flip Chip Anti Parallel Low RS TM MS8250 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3 Typ.) ● Cut-Off Frequency > 500 GHz
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MS8250
P2920
MS8250
x10-13
P2613
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ms8520-48
Abstract: MS8520 Microwave detector diodes MS8250 MS8520-P10 doppler microwave transceiver doppler transceiver microwave detector diode Microwave schottky Diode mixer microwave transceiver sensitivity
Text: SCHOTTKY DIODES TM Silicon Low Barrier MS8250 – 48 Features ● For Detector and Mixer Applications ● Vertical Offset Contact ● Low Capacitance Package 0.09 pF ● Available as Bondable Chips ● Priced for Commercial Applications Specifications @ 25°C
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MS8250
MS8520-48
MS8250
MS8520
Microwave detector diodes
MS8520-P10
doppler microwave transceiver
doppler transceiver
microwave detector diode
Microwave schottky Diode mixer
microwave transceiver sensitivity
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Untitled
Abstract: No abstract text available
Text: GaAs Schottky Diodes Flip Chip Anti Parallel Low RS TM MS8250 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features Capacitance 65 fF Typ. Low Series Resistance (3 Typ.) Cut-Off Frequency > 500 GHz Large Gold Bond Pads
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MS8250
P2920
MS8250
device584
x10-13
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Untitled
Abstract: No abstract text available
Text: GaAs Schottky Diodes Flip Chip Anti Parallel Low CT TM MS8251 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features Capacitance 45 fF Typ. Low Series Resistance (7 Typ.) Cut-Off Frequency > 500 GHz Description
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MS8251
P2920
MS8251-P2920
x10-13
MS8251
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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Untitled
Abstract: No abstract text available
Text: 256 K x 8 SRAM molaic MS8256RKX-55/70/85 Issue 1.0 : April 1988 M osaic S em iconductor Inc 262,144 x 8 CMOS High Speed Static RAM ADVANCED PRODUCT INFORMATION Features Pin Definition Fast Access Times of 70/85 nS 55nS under developement Standard 3Z pin S1L footprint
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MS8256RKX-55/70/85
AO-14
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Untitled
Abstract: No abstract text available
Text: JUM 2 6 1932 256 K x 8 SRAM molate MS8256RKXA-55/70 Issue 1.0 : June 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO A1 A2 A3 00 D1 A4 A5 A6 A7 A8 A13 D2 CS A1S A16 A17 A9 GNO OE A14 D3
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MS8256RKXA-55/70
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MS825
Abstract: D0201AD MS835 MS840 MS845 RM250
Text: 1 8 Amp Schottky Rectifier MS825 - MS845 : Millim eter Dim. In ch e s Minimum .188 1.00 .285 .046 A B C D Maximum Minimum .260 - .375 .056 4.78 25,4 7.24 1.17 Maximum N otes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD D Working Repetitive M ic ro s e m i
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MS825
MS845
D0201AD
US830
MS835
MS840
MS845
RM250
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pinout 7420
Abstract: No abstract text available
Text: moiaic 256 K x 8 SRAM MS8256RKXA-55/70 Issue 1.0: June 1992 ADVANCE PRODUCT INFORMATION M o s a ic S e m ic o n d u c to r Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO A1 A2 A3 DO 01 A4 AS A6 A7 A8 A13 02 CS A15 A16 A17 A9 GNO OE A14 03
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MS8256RKXA-55/70
80jiW
A0-A17
KXALI-55
pinout 7420
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sc 8256
Abstract: ms8256 pin diagram ic 7420
Text: 256K X 8 SRAM m o l a t MS8256SC-55/70/85 Issue 3.1 : April 1992 e Mosaic Pin Definition Sem iconductor 262,144 X 8 CMOS High Speed Static RAM Features Very Fast Access Times of 55/70/85 ns. JEDEC Standard 32 pin DIL footprint. Operating Power 225 mW typ.
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MS8256SC-55/70/85
MIL-STD-883D
MS8256SCMB-55
sc 8256
ms8256
pin diagram ic 7420
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ic tba 220
Abstract: No abstract text available
Text: w 256K X 8 SRAM MS8256FKXA-10/12/15 molaic Issue 1.0 : August 1990 ADVANCE PRODUCT INFORMATION Sem iconductor '"c r 262,144 x 8 CMOS High Speed Static RAM Features "n Pin Definition A17 A16 A14 A12 A7 Access Times of 100/120/150 ns JEDEC Standard 32 pin OIL footprint
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MS8256FKXA-10/12/15
MS8256FKXALI-10
ic tba 220
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Untitled
Abstract: No abstract text available
Text: 8 Amp Schottky Rectifier MS825 - MS845 X ' : Dim. In ch es Minimum A B C Millimeter Maximum Minimum .188 1.00 .285 .046 .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dia. 9.52 1.42 Oia. - PLASTIC D0201AD 4-c Microsemi C atalog Number Working
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MS825
MS845
D0201AD
MS825
MS830
MS835
MS840
175-C
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Untitled
Abstract: No abstract text available
Text: MOSAI C S E M I C O N D U C T O R INC 53E ]> • b 3 S 3 3 7 T 0 G D 1 2 4 5 7b£ B I M O C 256 K x 8 SRAM moXaic MS8256RKX A-55/70 Issue 1.0 : June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition
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MS8256RKX
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Untitled
Abstract: No abstract text available
Text: HAv ì a t*H 256K X 8 SRAM molaic MS8256SC-55/70/85 Issue 3.1 : April 1992 ^ i n Definition S e m ic o n d u c to r NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND 262,144 x 8 CMOS High Speed Static RAM Features Very Fast Access Times of 55/70/85 ns. JEDEC Standard 32 pin DIL footprint.
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MS8256SC-55/70/85
MIL-STD-883D
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Untitled
Abstract: No abstract text available
Text: 256K X 8 SRAM molate MS8256FK-70/85/10/12 Issue 2.0 : September 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 262,144 x 8 CMOS High Speed Static RAM Features Access Times of 70/85/100/120 ns JEDEC Standard 32 pin DIL footprint Operating Power
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MS8256FK-70/85/10/12
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Untitled
Abstract: No abstract text available
Text: moì aie 256K X 8 SRAM MS8256FKX-85/10/12 Issue 1.2: August 1990 ADVANCE PRODUCT INFORMATION Mosaic S e m ic o n d u c to r g g g ^ x g ^ Q g H jg h g ^ g ^ R A M Pin Definition Features NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND Access Times of 85/100/120 ns
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MS8256FKX-85/10/12
O6FKXLI-10
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Untitled
Abstract: No abstract text available
Text: MOSAIC SEMICONDUCTOR INC S3E ]> D0D1257 437 • ■ M0 C 256K X 8 S R A M moXaic MS8256SC-10/ 12/15 Issue 2.0 : September 1990 PRELIMINARY Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Features Access Times of 100/120/150 ns JEDEC Standard 32 pin OIL footprint
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D0D1257
MS8256SC-10/
MIL-STD-883C.
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sc 8256
Abstract: IC 8256
Text: 256K X 8 SRAM moìaic MS8256SC-10/12/15 Issue 2 .0 : Septem ber 1990 PRELIMINARY M o sa ic S e m ic o n d u c to r inc. 262,144 x 8 CMOS High Speed Static RAM Features Access Times of 100/120/150 ns JEDEC Standard 32 pin DIL footprint Operating Power 130 mW typ.
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MS8256SC-10/12/15
OCLMB-10
MIL-STD-883C.
sc 8256
IC 8256
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oh140
Abstract: No abstract text available
Text: 256K X 8S R A M molate MS8256FK-45/55 Issue 12. : September 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r inc. Pin Definition 524,288 x 8 CMOS High Speed Static RAM Features NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 AO DO D1 D2 GND Very Fast Access Times of 45/55 ns
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MS8256FK-45/55
MS82S6FK-4S/S5
MS8256FKLI-45
oh140
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Untitled
Abstract: No abstract text available
Text: 256K X 8 SRAM m o l a t MS8256SC-025/35/45 e Issue 1.0 : April 1993 ADVANCE PRODUCT INFORMATION Sem iconductor Inc. Pin Definition 262,144 x 8 CMOS High Speed Static RAM Features A14 3 [ A12 4 [ A7 S [ 3 3 3 3 3 AS 6 [ ] A5 7 [ ] 26 A9 A4 8 3 25 A11 24 Ö E
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MS8256SC-025/35/45
MlL-STD-883,
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Untitled
Abstract: No abstract text available
Text: MOSAIC SEMICONDUCTOR INC S3E D Wk b35337^ DDG1SS1 TbT • MOC 256 K x 8 SRAM moxaic M S 825 6R K X A -8 5 /1 0 /1 2 /1 5 Issue 1.0: June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO
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b35337^
800jiW
MS8256RKXAL
100ns
120ns
150ns
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HSM560
Abstract: DO-215AB
Text: Schottky Rectifiers Microsemi Division Package Outline Type Mil Data S p e c 1Sheet 10 IO Amps IFSM V F @ I Q VR (Volts) (Amps) (Volts) «I Part Number Microsemi CJ (pF> 1 SR504 MS504 SCF1045 LSM545G LSM545J MSP545 MSS45 MS505 HSM550G HSM550J SR505 HSM560G
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SR504
MS504
SCF1045
LSM545G
LSM545J
MSP545
MSS45
MS505
HSM550G
HSM550J
HSM560
DO-215AB
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