kb3925qf-b1
Abstract: MS-163K1 RTS5158E MS-1673 BD38 80L6A-30 MS-163K D0802 FMD1 intel g41 msi
Text: 5 4 3 2 1 +3V +5V TPS51120 PENRYN MS-163K1 MS-1673 VER : 0B Page 31 DC JACK & Selector Page 3,4 Page 29 2008/01/23 VTT(1.05V) +1_5VRUN SC412A HOST D FSB 667/800/1066 LVDS LVDS Page 16 HDMI Page 14 SYS POWER RGB CRT Page 16 +1_8VDIMM SC412A SMDDR_VTERM APL5331
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TPS51120
MS-163K1
MS-1673)
SC412A
SC412A
APL5331
PI3VDP411LSZDE
MAX8770
RTL8111C
ISL6262A
kb3925qf-b1
MS-163K1
RTS5158E
MS-1673
BD38
80L6A-30
MS-163K
D0802
FMD1
intel g41 msi
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smd marking k301
Abstract: SMD sot23-5 marking E1 sti7xxx K301 marking marking k301 TSH70 TSH71 TSH72 TSH73 TSH74
Text: TSH70,71,72,73,74,75 Rail-to-Rail, Wide-Band, Low-Power Operational Amplifiers • 3V, 5V, ±5V specifications ■ 3dB bandwidth: 90MHz ■ Gain bandwidth product: 70MHz ■ Slew rate: 100V/ms Pin Connections top view TSH70 : SOT23-5/SO8 Output 1 VCC - 2
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TSH70
90MHz
70MHz
00V/ms
TSH70
OT23-5/SO8
TSH71
OT23-5,
smd marking k301
SMD sot23-5 marking E1
sti7xxx
K301 marking
marking k301
TSH71
TSH72
TSH73
TSH74
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Untitled
Abstract: No abstract text available
Text: TSH70,71,72,73,74,75 Rail-to-Rail, Wide-Band, Low-Power Operational Amplifiers • 3V, 5V, ±5V specifications ■ 3dB bandwidth: 90MHz ■ Gain bandwidth product: 70MHz ■ Slew rate: 100V/ms Pin Connections top view TSH70 : SOT23-5/SO8 Output 1 VCC - 2
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TSH70
70MHz
90MHz
00V/ms
TSH70
OT23-5/SO8
TSH71
OT23-5,
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ISL6262
Abstract: 15U20A kb3925 MS-1421 SLG8SP512 hannstar diode DB3 C531 intel g41 msi Socket AM2 sst25vf016b
Text: 5 4 3 AMT MS-1421 VER : 2.0 05/18 2 D C B +3V +5V TPS51120 DC JACK & Selector Merom 478 Page 3,4 01 : BLOCK DIAGRAM 02 : PLATFORM 03 : Merom-1 CPU (HOST BUS) 04 : Merom-2 CPU (POWER/GND) 05 : 965GM-1 (HOST) 06 : 965GM-2 (DMI / VGA) 07 : 965GM-3 (DDR) 08 : 965GM-4 (Power-1)
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MS-1421
TPS51120
965GM-1
965GM-2
965GM-3
965GM-4
965GM-5
965GM-6
CH7307
SLG8SP512)
ISL6262
15U20A
kb3925
SLG8SP512
hannstar
diode DB3 C531
intel g41 msi
Socket AM2
sst25vf016b
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diode DB3 C531
Abstract: MDIO18 intel g41 msi an12948 PC123 s4 2C175 Socket AM2 KB392 kb3925 hannstar
Text: 5 4 3 AMT MS-1421 VER : 1.0 04/02 2 D C B +3V +5V TPS51120 DC JACK & Selector Merom 478 Page 3,4 01 : BLOCK DIAGRAM 02 : PLATFORM 03 : Merom-1 CPU (HOST BUS) 04 : Merom-2 CPU (POWER/GND) 05 : 965GM-1 (HOST) 06 : 965GM-2 (DMI / VGA) 07 : 965GM-3 (DDR) 08 : 965GM-4 (Power-1)
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MS-1421
TPS51120
965GM-1
965GM-2
965GM-3
965GM-4
965GM-5
965GM-6
CH7307
SLG8SP512)
diode DB3 C531
MDIO18
intel g41 msi
an12948
PC123 s4
2C175
Socket AM2
KB392
kb3925
hannstar
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diode DB3 C531
Abstract: MS-1421 isl6262 2200P50X0402 sot363 M21 ALC888 intel g41 msi top 246 yn Socket AM2 KB392
Text: 5 4 3 AMT MS-1421 VER : 2.1 07/19 2 D C B +3V +5V TPS51120 DC JACK & Selector Merom 478 Page 3,4 01 : BLOCK DIAGRAM 02 : PLATFORM 03 : Merom-1 CPU (HOST BUS) 04 : Merom-2 CPU (POWER/GND) 05 : 965GM-1 (HOST) 06 : 965GM-2 (DMI / VGA) 07 : 965GM-3 (DDR) 08 : 965GM-4 (Power-1)
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MS-1421
TPS51120
965GM-1
965GM-2
965GM-3
965GM-4
965GM-5
965GM-6
CH7307
SLG8SP512)
diode DB3 C531
isl6262
2200P50X0402
sot363 M21
ALC888
intel g41 msi
top 246 yn
Socket AM2
KB392
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isl6262
Abstract: diode DB3 C531 kb3925 intel g41 msi hannstar 16-RGB 33P10 0R04 2200P50X0402 max8724e
Text: 5 4 3 AMT MS-1421 VER : 1.1 06/11 2 D C B +3V +5V TPS51120 DC JACK & Selector Merom 478 Page 3,4 01 : BLOCK DIAGRAM 02 : PLATFORM 03 : Merom-1 CPU (HOST BUS) 04 : Merom-2 CPU (POWER/GND) 05 : 965GM-1 (HOST) 06 : 965GM-2 (DMI / VGA) 07 : 965GM-3 (DDR) 08 : 965GM-4 (Power-1)
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MS-1421
TPS51120
965GM-1
965GM-2
965GM-3
965GM-4
965GM-5
965GM-6
CH7307
SLG8SP512)
isl6262
diode DB3 C531
kb3925
intel g41 msi
hannstar
16-RGB
33P10
0R04
2200P50X0402
max8724e
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ATI SB450
Abstract: max8736 XC-01 CI853 U113D CI846 ic max8736 ati sb400 ATI RC410ME MS-1412
Text: 5 4 3 2 1 +3V +5V MS-1412 VER:2.0 Intel Yonha CPU+ ATi RC410ME&SB450 Chipset D C 01:BLOCK DIAGRAM 02:PLATFORM 03:Yonah-1 CPU HOST BUS 04:Yonah-2 CPU (POWER/GND) 05:Yonah-3 06:RC410ME(HOST) 07:RC410ME(DDR) 08:RC410ME(VIDEO/PCI-E) 09:RC410ME(POWER/STRAPS)
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MS-1412
RC410ME
SB450
951413CGLFTB)
ATI SB450
max8736
XC-01
CI853
U113D
CI846
ic max8736
ati sb400
ATI RC410ME
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max8736
Abstract: CI846 CI853 CT360 CI845 CI847 ATI SB450 U113D CT349 CI855
Text: 5 4 3 2 1 +3V +5V MS-1412 VER:1.1 Intel Yonha CPU+ ATi RC410ME&SB450 Chipset D C 01:BLOCK DIAGRAM 02:PLATFORM 03:Yonah-1 CPU HOST BUS 04:Yonah-2 CPU (POWER/GND) 05:Yonah-3 06:RC410ME(HOST) 07:RC410ME(DDR) 08:RC410ME(VIDEO/PCI-E) 09:RC410ME(POWER/STRAPS)
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MS-1412
RC410ME
SB450
951413CGLFTB)
max8736
CI846
CI853
CT360
CI845
CI847
ATI SB450
U113D
CT349
CI855
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kb3925qf-b1
Abstract: BAT-BT-CR2032-RH JNC40 80L6A-30 ICS9LPRS110A pi3vdp411 R6018 Socket AM2 ICS9LPRS ich9
Text: 5 4 3 2 1 +3V +5V TPS51120 PENRYN MS-1673 VER : 0A Page 31 DC JACK & Selector Page 3,4 2007/12/03 Page 29 VTT 1.05V +1_5VRUN SC412A HOST D FSB 667/800/1066 LVDS LVDS Page 16 HDMI Page 14 SYS POWER RGB CRT Page 16 +1_8VDIMM SC412A SMDDR_VTERM APL5331 NORTH
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TPS51120
MS-1673
SC412A
SC412A
APL5331
PI3VDP411LSZDE
MAX8770
RTL8111C
ISL6262A
kb3925qf-b1
BAT-BT-CR2032-RH
JNC40
80L6A-30
ICS9LPRS110A
pi3vdp411
R6018
Socket AM2
ICS9LPRS
ich9
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BSS138
Abstract: BSS138 50V Zetex bss138
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA
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BSS138
200mA
BSS138
BSS138 50V
Zetex bss138
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BSS138TA
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA
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BSS138
200mA
100mA
522-BSS138TA
BSS138TA
BSS138TA
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an5296
Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30
Text: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a
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CA3146,
CA3146A,
CA3183,
CA3183A
FN532
CA3183A,
CA3183
CA3146A
an5296
AN5296 application note
AN5296 Application note CA3018
AN5296 Application of the CA3018
AN5296 Application of the CA3018 Integrated
CA3018
emitter area of CA3083
CA3146
CA30
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an5296
Abstract: AN5296 Application note CA3018 AN5296 Application of the CA3018 Integrated AN5296 application note "Application of the CA3018" ca3046 Thyristor bst 2 high voltage operational amplifier ic AN5296 Application of the CA3018 CA3146A
Text: CA3146, CA3146A, CA3183, CA3183A TM T ODUC T T E PR E ODUC L R O P S E T OB U IT 3 BST A308Sheet L E SU 86, CData POSSIB 3046, CA30 CA itle A31 , 314 , 318 318 bt ighlte ntor rays utho ) eyrds terrpoion, ee, nsisay, st N, V, ma ma, z ft, h lt- May 2001 File Number
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CA3146,
CA3146A,
CA3183,
CA3183A
CA3183A,
CA3183
CA3146A
CA3146
an5296
AN5296 Application note CA3018
AN5296 Application of the CA3018 Integrated
AN5296 application note
"Application of the CA3018"
ca3046
Thyristor bst 2
high voltage operational amplifier ic
AN5296 Application of the CA3018
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BS107PT
Abstract: DSA0037518
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS107PT TYPICAL CHARACTERISTICS ID On -On-State Drain Current (Amps) ID(On) - On-State Drain Current (Amps) 1.2 VGS= 10V 6V 1.0 0.8 0.6 4V 0.4 0.2 3V 20 40 60 80 100 0.4 ABSOLUTE MAXIMUM RATINGS. VDS-Drain Source Voltage (Volts)
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BS107PT
100mA
500mA
BS107PT
DSA0037518
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Untitled
Abstract: No abstract text available
Text: BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 9.5 7.2 mΩ VGS=4.5 V 13 10 25 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID A · 100% Lead-free; RoHS compliant
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BSZ0907ND
IEC61249-2-21
0907ND
B6D398
89456789ABC586
864C234C
3F4564%
3FC586
3BF34
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Untitled
Abstract: No abstract text available
Text: BSZ0908ND PowerStage 3x3 Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mW VGS=4.5 V 25 13 19 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant
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BSZ0908ND
IEC61249-2-21
0908ND
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BSZ0908ND
Abstract: T1018
Text: Preliminary Datasheet PowerStage 3x3 BSZ0908ND Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mΩ VGS=4.5 V 25 13 20 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant
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BSZ0908ND
IEC61249-2-21
0908ND
BSZ0908ND
T1018
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0907ND
Abstract: No abstract text available
Text: BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 9.5 7.2 mW VGS=4.5 V 13 10 25 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID A · 100% Lead-free; RoHS compliant
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BSZ0907ND
IEC61249-2-21
0907ND
0907ND
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet PowerStage 3x3 BSZ0908ND Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mΩ VGS=4.5 V 25 13 20 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant
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BSZ0908ND
IEC61249-2-21
0908ND
B6D398
89456789ABC586
864C234C
3F4564%
3FC586
3BF34
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Untitled
Abstract: No abstract text available
Text: 750D5DD 0GGG352 bSS WA H aNoVeRTER W o rld 's M o s t A d va n ce d Ultra H igh Density DC-DC Converters DC-DC Converters, 100-120 Watt Family Evaluation Boards Available Up to I 2 0 W atts 4 8 and 3 0 0 V D C Input DESCRIPTION NanoVerter modules are high density DCDC converters designed for use in tele
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750D5DD
0GGG352
GG00357
nV48-5.
400MHZ
nV48-5
A-16A-4A.
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NJX5412A
Abstract: NJX5412B NJX5412C
Text: I NEW JAPAN RADIO CO LT» m 45E ]> bSblfiôB 00011Ô2 *ìBfi H N J R C _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ GaAs FET_ _ _ _ _ _ _ _ _ _ _ _ _ NJX5412 Series D 'T '^ z s • Description NJX5412 series GaAs FET’s with N-channel Schottky barrier recessed gate structure and low noise are designed for in
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NJX5412
240mW
I75-C
NJX5412A
NJX5412B
NJX5412C
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MGF1102
Abstract: N-Channel, Dual-Gate FET 251C dual-gate
Text: bSMSâST D017ÔE3 Sbö MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1102 FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION OUTLINE DRAWING The M G F 1 1 0 2 is a low noise and high gain GaAs dual gate FET for L to C band applications.
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MGF1102
MGF1102
N-Channel, Dual-Gate FET
251C
dual-gate
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M54541L
Abstract: driver mitsubishi
Text: • MITSUBISHI ELEK -CUNEAR} flO 6249826 MITSUBISHI '• • M ITSUBISHI BIPOLAR DIGITAL ICs D E I bS4Tfl2b 00DTD4S t. ELEK LINEAR 80C 0 9 0 4 5 0' T-52-13-25 BI-DIRECTIONAL MOTOR DRIVER DESCRIPTION The M54541L, B I-D IR E C TIO N A L M O T O R DRIVER, consists
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00DTD4S
T-52-13-25
M54541L,
800mA
M54541L
driver mitsubishi
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