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NXP Semiconductors MRFE6VP8600HSR5 RF MOSFET LDMOS 50V NI1230
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MRFE6VP8600HSR5 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
MRFE6VP8600HSR5		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, RF FET LDMOS DUAL NI1230S		Original	PDF

MRFE6VP8600HSR5 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C3225X7R2A225KT Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices	Original	PDF	MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices	Original	PDF	MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original	PDF
BA 7891 NG Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 Text: 释放潜能 RF 手册第 16 版高性能 RF 产品应用和设计手册 2012 年 6 月恩智浦助您释放下一代 RF 和微波设计的潜能恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进	Original	PDF	PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
6 pin TRANSISTOR SMD CODE CAA Abstract: TEA6721 BF991 spice model Text: RF マニュアル第 16 版ハイパフォーマンスRF製品用のアプリケーションおよび設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォーマンスがさらに向上 NXPの RF マニュアルは、	Original	PDF
MRFE6VP8600H Abstract: MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20 Text: Document Number: MRFE6VP8600H Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices	Original	PDF	MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20