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    SEMICONDUCTOR J598

    Abstract: j598 ATC800B0R8BT500XT ATC800B J739
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21172H Rev. 0, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


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    PDF MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172H SEMICONDUCTOR J598 j598 ATC800B0R8BT500XT ATC800B J739

    j598

    Abstract: No abstract text available
    Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original
    PDF MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172HR3 j598

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original
    PDF MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172HR3

    SEMICONDUCTOR J598

    Abstract: j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT
    Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original
    PDF MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 2110-mployees, MRF8S21172H SEMICONDUCTOR J598 j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT