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    Untitled

    Abstract: No abstract text available
    Text: MRF4957HX Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)20


    Original     		PDF MRF4957HX

    Untitled

    Abstract: No abstract text available
    Text: MRF4957HXV Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)20


    Original     		PDF MRF4957HXV

    MRF495

    Abstract: MRF4957HX s54 mo
    Text: 4bE D • b3ti72S4 O Q T S T n 7 ■ MO Tb * 1 - 2 3 - 2 3 M O T O R O L A SC X S T R S / r f , MOTOROLA SEMICONDUCTOR! TECHNICAL DATA MRF4957HX,HXV DM0 «///// PNP Silicon RF High-Frequency Transistor Discrete Military Operation . . .designed for high-gain, low-noise amplifier, oscillator and mixer applications.


    OCR Scan     		PDF b3ti72S4 MRF4957HX T-33-23 MRF495 s54 mo