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Rochester Electronics LLC MRF21060R3 RF MOSFET LDMOS 28V NI780
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DigiKey	MRF21060R3	Bulk			8	1 - 10 $41.01 100 $41.01 1000 $41.01 10000 $41.01	Buy Now
Motorola Semiconductor Products MRF21060S TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR
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Quest Components	MRF21060S		127			1 $46.8 10 $46.8 100 $39.6 1000 $39.6 10000 $39.6	Buy Now
Motorola Semiconductor Products MRF21060 TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR
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Quest Components	MRF21060		12			1 $58.5 10 $56.25 100 $56.25 1000 $56.25 10000 $56.25	Buy Now
Freescale Semiconductor MRF21060R3 RF S Band, N-Channel Power MOSFET
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Rochester Electronics	MRF21060R3		729		1	1 $39.43 10 $39.43 100 $37.06 1000 $33.52 10000 $33.52	Buy Now

MRF21060 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
MRF21060	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF
MRF21060	Freescale Semiconductor	MRF21060R3, MRF21060SR3 2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETs	Original	PDF
MRF21060	Motorola	RF Power Field Effect Transistor	Original	PDF
MRF21060	Motorola	MRF21060, MRF21060S 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF
MRF21060LR3	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF
MRF21060LSR3	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF
MRF21060R3	Motorola	RF Power Field Effect Transistors	Original	PDF
MRF21060S	Freescale Semiconductor	FET, Enhancement, N Channel, 2 VThreshold	Original	PDF
MRF21060SR3	Motorola	RF Power Field Effect Transistor	Original	PDF
MRF21060SR3	Motorola	RF Power Field Effect Transistors	Original	PDF

MRF21060 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and	Original	MRF21060 MRF21060LR3 MRF21060LSR3 MRF21060LR3	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF21060 Rev. 8, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from	Original	MRF21060 MRF21060LR3 MRF21060LSR3 MRF21060	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	MRF21060/D MRF21060 MRF21060S MRF21060/D	PDF
CDR33BX104AKWS Abstract: MRF21060 MRF21060LR3 MRF21060LSR3 Text: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from	Original	MRF21060 MRF21060LR3 MRF21060LSR3 MRF21060LR3 CDR33BX104AKWS MRF21060 MRF21060LSR3	PDF
CDR33BX104AKWS Abstract: MRF21060 MRF21060S Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	MRF21060/D MRF21060 MRF21060S MRF21060 CDR33BX104AKWS MRF21060S	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21060 MRF21060R3 MRF21060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier	Original	Therm2170 MRF21060 MRF21060R3 MRF21060SR3	PDF
500 watts amplifier schematic diagram Abstract: 100B4R7 700 watts power amplifier circuit diagram Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier	Original	MRF21060 MRF21060S 500 watts amplifier schematic diagram 100B4R7 700 watts power amplifier circuit diagram	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 RF Power Field Effect Transistors MRF21060R3 MRF21060S N–Channel Enhancement–Mode Lateral MOSFETs MRF21060SR3 The RF MOSFET Line Designed for PCN and PCS base station applications from frequencies up to	Original	MRF21060/D MRF21060 MRF21060R3 MRF21060S MRF21060SR3	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060R3 MRF21060S MRF21060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF21060/D MRF21060 MRF21060R3 MRF21060S MRF21060SR3 MRF21060/D	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21060R3 MRF21060SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF21060/D MRF21060R3 MRF21060SR3 MRF21060/D	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF21060 Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060R3 MRF21060SR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and	Original	MRF21060 MRF21060R3 MRF21060SR3	PDF
CDR33BX104AKWS Abstract: MRF21060 MRF21060LR3 MRF21060LSR3 Text: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and	Original	MRF21060 MRF21060LR3 MRF21060LSR3 MRF21060LR3 CDR33BX104AKWS MRF21060 MRF21060LSR3	PDF
Johanson Abstract: CDR33BX104AKWS MRF21060 MRF21060R3 MRF21060SR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21060R3 MRF21060SR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs	Original	MRF21060/D MRF21060R3 MRF21060SR3 MRF21060R3 Johanson CDR33BX104AKWS MRF21060 MRF21060SR3	PDF
2001RF Abstract: J205 "RF MOSFET" motorola ups schematic CDR33BX104AKWS MRF21060 MRF21060R3 MRF21060SR3 GX03005522 NI-780 Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060R3 MRF21060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	MRF21060/D MRF21060 MRF21060R3 MRF21060SR3 MRF21060 MRF21060R3 2001RF J205 "RF MOSFET" motorola ups schematic CDR33BX104AKWS MRF21060SR3 GX03005522 NI-780	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF21060 Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060R3 MRF21060SR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and	Original	MRF21060 MRF21060R3 MRF21060SR3	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060R3 MRF21060S MRF21060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier	Original	The170 MRF21060 MRF21060R3 MRF21060S MRF21060SR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060R3 MRF21060SR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and	Original	MRF21060R3 MRF21060SR3	PDF
diode C531 Abstract: c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217 Text: UPF21060 60W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 60W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier	Original	UPF21060 MRF21060 diode C531 c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217	PDF
transistor 10mhz 60w Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class	Original	UGF21060 17GHz, MRF21060/MRF21060S. 700mA 30kHz 2140MHz 84MHz 10MHz UGF21060 transistor 10mhz 60w UGF21060F UGF21060P mosfet class ab rf	PDF
BFG591 amplifier Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23 Text: RF手册第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品恩智浦RF手册令设计更简易恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP	Original	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23	PDF
Cree Microwave Abstract: UGF21060 UGF21060F UGF21060P Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class	Original	UGF21060 17GHz, MRF21060/MRF21060S. UGF21060 Cree Microwave UGF21060F UGF21060P	PDF
stripline directional couplers Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,	Original	SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1	PDF
TRANSISTOR REPLACEMENT GUIDE Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station	Original	SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF

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MRF21060 Price and Stock

Rochester Electronics LLC MRF21060R3

Motorola Semiconductor Products MRF21060S

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Freescale Semiconductor MRF21060R3

MRF21060 Datasheets (10)

MRF21060 Datasheets Context Search

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CDR33BX104AKWS

CDR33BX104AKWS

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500 watts amplifier schematic diagram

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CDR33BX104AKWS

Johanson

2001RF

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diode C531

transistor 10mhz 60w

BFG591 amplifier

Cree Microwave

stripline directional couplers

TRANSISTOR REPLACEMENT GUIDE

2a258 transistor