4134 mosfet
Abstract: mrf 861 transistor mrf 610 PE4134 RF POWER MOSFET
Text: PRODUCT SPECIFICATION PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive
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PE4134
PE4134
4134 mosfet
mrf 861
transistor mrf 610
RF POWER MOSFET
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mrf 861
Abstract: ETC1-1-13 PE4135 RF POWER MOSFET
Text: PRODUCT SPECIFICATION PE4135 High Linearity Quad MOSFET Mixer for GSM800 & Cellular BTS Product Description The PE4135 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad
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PE4135
GSM800
PE4135
mrf 861
ETC1-1-13
RF POWER MOSFET
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4135 High Linearity UltraCMOS Quad MOSFET Mixer Product Description The PE4135 is a high linearity passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up
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PE4135
PE4135
GSM800
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4134 mosfet
Abstract: MRF MOSFET 70-0087 PE4134 RF POWER MOSFET ETK4-2T
Text: Product Specification PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up to
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PE4134
PE4134
4134 mosfet
MRF MOSFET
70-0087
RF POWER MOSFET
ETK4-2T
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MRF MOSFET
Abstract: 858C ETC1-1-13 PE4135 PE4135-EK
Text: Product Specification PE4135 High Linearity UltraCMOS Quad MOSFET Mixer Product Description The PE4135 is a high linearity passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up
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PE4135
PE4135
GSM800
MRF MOSFET
858C
ETC1-1-13
PE4135-EK
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4135 High Linearity UltraCMOS Quad MOSFET Mixer Product Description The PE4135 is a high linearity, UltraCMOS™ passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a
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PE4135
PE4135
GSM800
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up to
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PE4134
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ir21xx
Abstract: DS18xx MC34XXX SP232 regulator 78xx series MC33xxx 63XXX DS12xx Am29Fxxx PLA10
Text: Back PFC Switch Mode Power Supply 3 1 2 EMI Filter & input rectifier AC in X2 X2 Y2 4 Primary switch Output rectifier & Electrolyte Y2 Y2 5 Voltage sensing DC out Control IC Passive comp. Passive Switch Mode Power Supply – Portfolio EMI Filter Power MOSFET
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PLA10
PLH10
HT12xxx
MIC29xx/39xx
MIC52xx
MC78xx
MC33xxx
MC34xxx
TC10xx/11xx
TC12xx
ir21xx
DS18xx
MC34XXX
SP232
regulator 78xx series
MC33xxx
63XXX
DS12xx
Am29Fxxx
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Untitled
Abstract: No abstract text available
Text: V X - n ^ U - X 7 t 7 - MOSFET s t& VX-H SERIES POWER MOSFET O U T L IN E DIM ENSIONS 2SK2190 FP10W50VX2 5 0 0 v 1 0 I ¡¡È fë li a RATINGS Absolute Maximum R atings II Item s n- iE ft sfe Symbol s C onditions + Y* KU' f ^ • V — X D rain -S o u rce Voltage
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2SK2190
FP10W50VX2)
0QQ227c
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mrf 510
Abstract: VK200-4B VRF150 60WV MRF 283 J101 0-12V 2204B Unelco j101
Text: VRF150 PRELIMINARY 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF150
150MHz
VRF150
150MHz,
30MHz,
mrf 510
VK200-4B
60WV
MRF 283
J101
0-12V
2204B
Unelco j101
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MRF 283
Abstract: vrf150
Text: VRF150 PRELIMINARY 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF150
150MHz
VRF150
150MHz,
30MHz,
MRF 283
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MRF21030
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21030SR3
MRF21030
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TLX8-0300
Abstract: 250 watts amplifier schematic diagram MRF21030 MRF21030S gps transmitter circuit diagram 100 watts amplifier circuit diagram
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21030
MRF21030S
TLX8-0300
250 watts amplifier schematic diagram
gps transmitter circuit diagram
100 watts amplifier circuit diagram
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Motorola transistors MRF 470
Abstract: motorola mrf MRF21030
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21030
MRF21030R3
MRF21030S
MRF21030SR3
Motorola transistors MRF 470
motorola mrf
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2n7002 siliconix
Abstract: MRF MOSFET 2N7002 Si3443DV X40435 SI3443 SILICONIX 2N7002
Text: Application Note AN 182 Using a Multiple Voltage Supervisor for Over and Under Voltage Power Supply Shutdown and Fault Monitoring Author: Carlos Martinez INTRODUCTION Reliable system operation is often dependent on the quality of the power supplied. Supply voltages that are
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X40435
2N7002
X40435
Si3443DV
2n7002 siliconix
MRF MOSFET
2N7002
SI3443
SILICONIX 2N7002
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Motorola transistors MRF 470
Abstract: MRF MOSFET MRF21030 MRF FM amplifier 400S MRF21030R3 MRF21030SR3
Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from
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MRF21030/D
MRF21030R3
MRF21030SR3
MRF21030R3
Motorola transistors MRF 470
MRF MOSFET
MRF21030
MRF FM amplifier
400S
MRF21030SR3
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Motorola transistors MRF 470
Abstract: motorola mrf TLX8-0300 MRF21030 400S MRF21030R3 MRF21030SR3 Motorola transistors MRF
Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from
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MRF21030R3
MRF21030SR3
MRF21030R3
Motorola transistors MRF 470
motorola mrf
TLX8-0300
MRF21030
400S
MRF21030SR3
Motorola transistors MRF
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motorola mrf
Abstract: Motorola transistors MRF 470 mrf 328 MRF21030 mrf 406 application circuit 305 Power Mosfet MOTOROLA Motorola transistors MRF mrf 510 T 2140 MRF21030S
Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to
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MRF21030/D
MRF21030
MRF21030S
MRF21030
motorola mrf
Motorola transistors MRF 470
mrf 328
mrf 406 application circuit
305 Power Mosfet MOTOROLA
Motorola transistors MRF
mrf 510
T 2140
MRF21030S
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mosfet 2n7002
Abstract: MRF high power transistor MRF MOSFET 2n7002 siliconix 2N7002 AN182 Si3443DV X40435 lv3f
Text: Using a Multiple Voltage Supervisor for Over and Under Voltage Power Supply Shutdown and Fault Monitoring Application Note April 26, 2005 AN182.0 Author: Carlos Martinez Introduction Reliable system operation is often dependent on the quality of the power supplied. Supply voltages that are too low can
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X404005
Si3443DV
X40435
2N7002
mosfet 2n7002
MRF high power transistor
MRF MOSFET
2n7002 siliconix
2N7002
X40435
lv3f
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motorola MRF
Abstract: Motorola transistors MRF 470 MRF21030
Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from
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MRF21030/D
MRF21030
MRF21030R3
MRF21030S
MRF21030SR3
MRF21030/D
motorola MRF
Motorola transistors MRF 470
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250 watts amplifier schematic diagram
Abstract: NI-400 Motorola transistors MRF MRF21030S MRF21030
Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to
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MRF21030
MRF21030R3
MRF21030S
MRF21030SR3
250 watts amplifier schematic diagram
NI-400
Motorola transistors MRF
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AN4001
Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
Text: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at
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MRF151A
12MHz,
AN4001
laser diode spice model simulation
Class E amplifier
300 watt mosfet amplifier class AB
MRF transistor
PIN diode MACOM SPICE model
27.12MHz power amplifier
27.12Mhz
500 watt mosfet power amplifier circuit diagram
1000 watt mosfet power amplifier
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33169/D MC33169 Advance Information GaAs Power Amplifier Support IC GaAs POWER AMPLIFIER SUPPORT IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This
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MC33169
MC33169
MC33169/D*
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mc331694
Abstract: mesfet datasheet by motorola DCS1800 MC33169 MMBD701 MMSF4N01HD MRFIC0913 MRF transistor
Text: Order this document by MC33169/D MC33169 GaAs Power Amplifier Support IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand–held telephones such as GSM and PCS. This device provides negative voltages for full depletion of Enhanced MESFETs as well as a
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MC33169
MC33169
DCS1800
mc331694
mesfet datasheet by motorola
MMBD701
MMSF4N01HD
MRFIC0913
MRF transistor
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