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    MRF MOSFET Search Results

    MRF MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MRF MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4134 mosfet

    Abstract: mrf 861 transistor mrf 610 PE4134 RF POWER MOSFET
    Text: PRODUCT SPECIFICATION PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive


    Original     		PDF PE4134 PE4134 4134 mosfet mrf 861 transistor mrf 610 RF POWER MOSFET

    mrf 861

    Abstract: ETC1-1-13 PE4135 RF POWER MOSFET
    Text: PRODUCT SPECIFICATION PE4135 High Linearity Quad MOSFET Mixer for GSM800 & Cellular BTS Product Description The PE4135 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad


    Original     		PDF PE4135 GSM800 PE4135 mrf 861 ETC1-1-13 RF POWER MOSFET

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4135 High Linearity UltraCMOS Quad MOSFET Mixer Product Description The PE4135 is a high linearity passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up


    Original     		PDF PE4135 PE4135 GSM800

    4134 mosfet

    Abstract: MRF MOSFET 70-0087 PE4134 RF POWER MOSFET ETK4-2T
    Text: Product Specification PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up to


    Original     		PDF PE4134 PE4134 4134 mosfet MRF MOSFET 70-0087 RF POWER MOSFET ETK4-2T

    MRF MOSFET

    Abstract: 858C ETC1-1-13 PE4135 PE4135-EK
    Text: Product Specification PE4135 High Linearity UltraCMOS Quad MOSFET Mixer Product Description The PE4135 is a high linearity passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up


    Original     		PDF PE4135 PE4135 GSM800 MRF MOSFET 858C ETC1-1-13 PE4135-EK

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4135 High Linearity UltraCMOS Quad MOSFET Mixer Product Description The PE4135 is a high linearity, UltraCMOS™ passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a


    Original     		PDF PE4135 PE4135 GSM800

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up to


    Original     		PDF PE4134 PE4134

    ir21xx

    Abstract: DS18xx MC34XXX SP232 regulator 78xx series MC33xxx 63XXX DS12xx Am29Fxxx PLA10
    Text: Back PFC Switch Mode Power Supply 3 1 2 EMI Filter & input rectifier AC in X2 X2 Y2 4 Primary switch Output rectifier & Electrolyte Y2 Y2 5 Voltage sensing DC out Control IC Passive comp. Passive Switch Mode Power Supply – Portfolio EMI Filter Power MOSFET


    Original     		PDF PLA10 PLH10 HT12xxx MIC29xx/39xx MIC52xx MC78xx MC33xxx MC34xxx TC10xx/11xx TC12xx ir21xx DS18xx MC34XXX SP232 regulator 78xx series MC33xxx 63XXX DS12xx Am29Fxxx

    mrf 510

    Abstract: VK200-4B VRF150 60WV MRF 283 J101 0-12V 2204B Unelco j101
    Text: VRF150 PRELIMINARY 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF150 150MHz VRF150 150MHz, 30MHz, mrf 510 VK200-4B 60WV MRF 283 J101 0-12V 2204B Unelco j101

    MRF 283

    Abstract: vrf150
    Text: VRF150 PRELIMINARY 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF150 150MHz VRF150 150MHz, 30MHz, MRF 283

    MRF21030

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21030R3 MRF21030SR3 MRF21030

    TLX8-0300

    Abstract: 250 watts amplifier schematic diagram MRF21030 MRF21030S gps transmitter circuit diagram 100 watts amplifier circuit diagram
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21030 MRF21030S TLX8-0300 250 watts amplifier schematic diagram gps transmitter circuit diagram 100 watts amplifier circuit diagram

    Motorola transistors MRF 470

    Abstract: motorola mrf MRF21030
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21030 MRF21030R3 MRF21030S MRF21030SR3 Motorola transistors MRF 470 motorola mrf

    MRF21030D

    Abstract: TLX8-0300 MRF21030
    Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF21030/D MRF21030 MRF21030S MRF21030D TLX8-0300

    Motorola transistors MRF 470

    Abstract: MRF MOSFET MRF21030 MRF FM amplifier 400S MRF21030R3 MRF21030SR3
    Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF21030/D MRF21030R3 MRF21030SR3 MRF21030R3 Motorola transistors MRF 470 MRF MOSFET MRF21030 MRF FM amplifier 400S MRF21030SR3

    Motorola transistors MRF 470

    Abstract: motorola mrf TLX8-0300 MRF21030 400S MRF21030R3 MRF21030SR3 Motorola transistors MRF
    Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF21030/D MRF21030R3 MRF21030SR3 MRF21030R3 Motorola transistors MRF 470 motorola mrf TLX8-0300 MRF21030 400S MRF21030SR3 Motorola transistors MRF

    motorola mrf

    Abstract: Motorola transistors MRF 470 mrf 328 MRF21030 mrf 406 application circuit 305 Power Mosfet MOTOROLA Motorola transistors MRF mrf 510 T 2140 MRF21030S
    Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF21030/D MRF21030 MRF21030S MRF21030 motorola mrf Motorola transistors MRF 470 mrf 328 mrf 406 application circuit 305 Power Mosfet MOTOROLA Motorola transistors MRF mrf 510 T 2140 MRF21030S

    mosfet 2n7002

    Abstract: MRF high power transistor MRF MOSFET 2n7002 siliconix 2N7002 AN182 Si3443DV X40435 lv3f
    Text: Using a Multiple Voltage Supervisor for Over and Under Voltage Power Supply Shutdown and Fault Monitoring Application Note April 26, 2005 AN182.0 Author: Carlos Martinez Introduction Reliable system operation is often dependent on the quality of the power supplied. Supply voltages that are too low can


    Original     		PDF AN182 X404005 Si3443DV X40435 2N7002 mosfet 2n7002 MRF high power transistor MRF MOSFET 2n7002 siliconix 2N7002 X40435 lv3f

    motorola MRF

    Abstract: Motorola transistors MRF 470 MRF21030
    Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF21030/D MRF21030 MRF21030R3 MRF21030S MRF21030SR3 MRF21030/D motorola MRF Motorola transistors MRF 470

    250 watts amplifier schematic diagram

    Abstract: NI-400 Motorola transistors MRF MRF21030S MRF21030
    Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF21030/D MRF21030 MRF21030R3 MRF21030S MRF21030SR3 250 watts amplifier schematic diagram NI-400 Motorola transistors MRF

    AN4001

    Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
    Text: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at


    Original     		PDF AN4001 MRF151A 12MHz, AN4001 laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MC33169/D MC33169 Advance Information GaAs Power Amplifier Support IC GaAs POWER AMPLIFIER SUPPORT IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This


    Original     		PDF MC33169/D MC33169 MC33169 MC33169/D*

    mc331694

    Abstract: mesfet datasheet by motorola DCS1800 MC33169 MMBD701 MMSF4N01HD MRFIC0913 MRF transistor
    Text: Order this document by MC33169/D MC33169 GaAs Power Amplifier Support IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand–held telephones such as GSM and PCS. This device provides negative voltages for full depletion of Enhanced MESFETs as well as a


    Original     		PDF MC33169/D MC33169 MC33169 DCS1800 mc331694 mesfet datasheet by motorola MMBD701 MMSF4N01HD MRFIC0913 MRF transistor

    Untitled

    Abstract: No abstract text available
    Text: V X - n ^ U - X 7 t 7 - MOSFET s t& VX-H SERIES POWER MOSFET O U T L IN E DIM ENSIONS 2SK2190 FP10W50VX2 5 0 0 v 1 0 I ¡¡È fë li a RATINGS Absolute Maximum R atings II Item s n- iE ft sfe Symbol s C onditions + Y* KU' f ^ • V — X D rain -S o u rce Voltage


    OCR Scan     		PDF 2SK2190 FP10W50VX2) 0QQ227c