mrc102
Abstract: MRC100 mrc101 MRC103 BLV194
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor Product specification January 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
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BLV194
OT171
mrc102
MRC100
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BLV194
Abstract: No abstract text available
Text: 7110ô2fci DDb313û TTT « P H I N bSE D PHILIPS INTERNATIONAL UHF power transistor Product specification Philips Semiconductors BLV194 Q U IC K REFERENCE DATA RF performance at T h = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for an
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711065b
D0b313fl
BLV194
OT171
PINNING-SOT171
MRC097
BLV194
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b 5 3 ^ 31 DDSTEm M il H A P X UHF power transistor BLV194 bTE D — — AUER PHILIPS/DISCRETE FEATURES • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.
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BLV194
MRC099
MRC097
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