MP3006
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE_ DARLINGTON POWER TRANSISTOR 3 IN 1 MP3006 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mra HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 2 0 .2 ± 0.2 . Small Package by Full Molding.
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MP3006
MP3006
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2sk405 2sj115
Abstract: 2SK405 2SJ115 2SJ115/2SK405
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK405 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mra 0 3 . 'Z ± O . Z FEATURES: . High Breakdown Voltage VDSS=1&0V . High Forward Transfoer Admittance |Yfs]=2.0S Typ. . Complementary to 2SJ115
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2SK405
2SJ115
2sk405 2sj115
2SK405
2SJ115/2SK405
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MRA transistor
Abstract: No abstract text available
Text: 0610-09 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 0610-09 is Designed for Class C, Common Base Applications in the 600 MHz to 1000 MHz Frequency Range. FEATURES INCLUDE: • Gold Metalization • Input Matching • Emitter Ballasting PACKAGE STYLE MRA .25
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Untitled
Abstract: No abstract text available
Text: JU MRA1 DIE P-Channel Enhancement-Mode MOS Transistors in c o r p o r a te d MRA1CHP* 3N163 3N164 "Meets or exceeds specification for all part numbers listed below For additional design information please consult the typical performance curves MRA. DESIGNED FOR:
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3N163
3N164
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T T E S D OOlbßMG O f * D 'T S R - il 99D 16840 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 3 2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOS I) INDUSTRIAL APPLICATIONS Unit in mra
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500nA
250yA
250ijA
00A/us
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M705
Abstract: No abstract text available
Text: ñ m-mra.• m Ê C F U S & IU l m m mm w * w w w» » mm 140 C om m erce Drive Montgomeryviüe, PA 18936-1013 Tel: 215 631-9840 O U 1 D t)U RF & MICROWAVE TRANSISTORS TACAN APPLICATIONS DESIGNED FOR USE IN TACAN SYSTEMS EXTREMELY RUGGED THERMALLY STABLE.
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SD1550
SD1550
1215MHz.
1215MHz
M705
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MRA - MFE823
Abstract: MFE823
Text: SILICONIX INC lflE D Ô5S473S O G m O H T MFE823 7 • CX'Sificonix incorporated 'T -Z l-X 'B P-Channel Enhancem ent-M ode M OS Transistor PRODUCT SUMMARY PART NUMBER V BR DSS (V) (m S) ■d (mA) PACKAGE -2 5 1 -3 0 TO-18 9(3 BOTTOM VIEW TO-18 MFE823 Performance Curves: MRA (See Section 7)
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5S473S
MFE823
MFE823
MRA - MFE823
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Untitled
Abstract: No abstract text available
Text: jre s ft 3N163 SERIES P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY B O T T O M VIEW TO -7 2 TO-206AF PART NUM BER V (BR|DSS 3N163 -40 250 -50 3N164 -30 300 -50 "W 1 • d (A) 1 2 3 4 Performance Curves: MRA DRAIN G ATE SUBSTR ATE, C A S E SO URCE
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3N163
O-206AF)
3N164
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relay asr 033
Abstract: Diode smd f6 ic SMD MARKING CODE ad 5.9 MR 31 relay P-DSO-20-12 TLE5200 smd diode MARKING F6 TVR 471 capacitor Zener diode smd marking code gw UZP-5
Text: ABS System IC 1 Overview 1.1 Features • • • • • • • • • TLE 6210 TLE 6211 5 V, 800 mA linear regulator Undervoltage/overvoltage reset Undervoltage and overvoltage logout Digital watchdog supervision for 2 Microcontrollers motor relay driver
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P-DSO-20-10,
P-DSO-20-12,
relay asr 033
Diode smd f6
ic SMD MARKING CODE ad 5.9
MR 31 relay
P-DSO-20-12
TLE5200
smd diode MARKING F6
TVR 471 capacitor
Zener diode smd marking code gw
UZP-5
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GPS05791
Abstract: P-DSO-20-12 TVR 431
Text: ABS System IC 1 Overview 1.1 Features • • • • • • • • • TLE 6210 TLE 6211 5 V, 800 mA linear regulator Undervoltage/overvoltage reset Undervoltage and overvoltage logout Digital watchdog supervision for 2 Microcontrollers motor relay driver
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P-DSO-20-10,
P-DSO-20-12,
GPS05791
P-DSO-20-12
TVR 431
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MRA0610-18A
Abstract: MRA transistor
Text: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-18A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.
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MRA0610-18A
MRA0610-18A
MRA transistor
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MRA0610-40A
Abstract: IC 555 datasheet of ic 555 RF NPN POWER TRANSISTOR 2.5 GHZ MRA0610-18A MRA transistor
Text: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-40A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.
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MRA0610-18A
MRA0610-40A
IC 555
datasheet of ic 555
RF NPN POWER TRANSISTOR 2.5 GHZ
MRA0610-18A
MRA transistor
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d 1877 transistor
Abstract: MRA transistor
Text: PRELIMINARY 0610-40 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 0610-40 is a Common B, Class C, Device Designed for Broadband Applications in the 600 MHz to 1.0 GHz Spectrum. FEATURES INCLUDE: • Internal Matching Emitter Ballasting • Gold Metalization
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Untitled
Abstract: No abstract text available
Text: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 0610-18A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications from 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.
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MRA0610-18A
610-18A
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BCWD
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RAL2023-18 M RAL2023-18H The RF Line M ic ro w a v e P o w er Transistors . . . desig n ed p rim a rily fo r w id e b a n d , large-signat o u tp u t and d riv e r a m p lifie r stages in the 2 to 2.3 GHz fre q u en cy range.
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RAL2023-18
RAL2023-18H
28AWG,
MRAL2023
MRAL2023-18H
BCWD
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE /OPT O} 9097250 TOSHIBA DISCRETE/OPTO $ufubn 0^ 1 ^ 0^ 7 55 0 0 0 1 b ñ 3 L Ti 99D 16836 DT-S^-l TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 3 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (7T-MOS I) INDUSTRIAL APPLICATIONS
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500nA
250uA
00A/us
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siliconix 3n163
Abstract: No abstract text available
Text: Tem ic 3N163/164_ siiicûnix P-Channel Enhancement-Mode MOS Transistors Product Summary P art N um ber V br DSS Min (V) v GS(th) r DS(on) M ax (a) Ì d (òh) M in (mA) CrsS Max »ON Typ (V) (pF) (ns) 3N163 -4 0 - 2 to - 5 250 -5 0.7
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3N163/164_
3N163
3N164
3N163/164
P-37404--Rev.
3N163/164
siliconix 3n163
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Untitled
Abstract: No abstract text available
Text: Tem ic 3N163/3N164 S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min VGS(th) (V) r DS(on) Max (V) (Q) IiKon) Min (mA) C-rss Max (pF) toN Typ (ns) 3N163 -40 - 2 to -5 250 -5 0.7 18 3N164 -30 -2 to -5
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3N163/3N164
3N163
3N164
3N163/164
P-37404--
04-Jul-94
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MRA transistor
Abstract: MRA1600-2 MRA1600 581 transistor motorola Motorola 581 motorola 803 transistor MOTOROLA 813 transistor motorola rf Power Transistor
Text: MOTOROLA Order this document by MRA1600/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistor MRA1600-2 Designed primarily for large–signal output and driver amplifier stages for mobile satellite up links. • Designed for Class C, Common Base Power Amplifiers
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MRA1600/D
MRA1600-2
MRA transistor
MRA1600-2
MRA1600
581 transistor motorola
Motorola 581
motorola 803 transistor
MOTOROLA 813 transistor
motorola rf Power Transistor
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3N164
Abstract: 3N163
Text: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18
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3N163/3N164
3N163
3N164
3N163/164
P-37404--Rev.
04-Jul-94
3N164
3N163
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3N163
Abstract: 3N164
Text: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18
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3N163/3N164
3N163
3N164
3N163/164
P-37404--Rev.
04-Jul-94
3N163
3N164
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3N163
Abstract: 3N164
Text: 3N163/164 Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 -40 -2 to -5 250 -5 0.7 18 3N164 -30 -2 to -5 300 -3 0.7 18 Features
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3N163/164
3N163
3N164
3N163/164
P37404Rev.
3N163
3N164
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ultra low igss pA
Abstract: electrometer ultra low igss High Conductance Low Leakage Diode To-206AF 3N163 3N164
Text: 3N163/3N164 P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18 Features
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3N163/3N164
3N163
3N164
3N163/164
P-37404--Rev.
04-Jul-94
ultra low igss pA
electrometer
ultra low igss
High Conductance Low Leakage Diode
To-206AF
3N163
3N164
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82c386
Abstract: 82C836 82C836B intel 80387sx LIM EMS 4.0 8088 motherboard schematics 82c710 Chips and Technologies microchannel timing 92H-System SCATsx
Text: 82C836 CHIPSet Single-Chip 386sx AT Data Sheet March 1993 P R E L I M I N A R Y Copyright Notice Software Copyright 1993, Chips and Technologies, Inc. Manual Copyright 1993, Chips and Technologies, Inc. All Rights Reserved. Printed in U.S.A. Trademark Acknowledgment
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82C836
386sx
82C836B.
82C836B
82c386
82C836
82C836B
intel 80387sx
LIM EMS 4.0
8088 motherboard schematics
82c710
Chips and Technologies microchannel timing
92H-System
SCATsx
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