MR826 EQUIVALENT Search Results

MR826 EQUIVALENT Result Highlights (5)

Part	Manufacturer	Description
TMP89FS60BFG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003
TMP89FS60BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003
TMP89FM82DUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D

MR826 EQUIVALENT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
r821 diodes Abstract: MR826 diode CR72 mr826 MR821 MR826 equivalent diode sg 5 ts MR822 mr820 motorola Text: MOTOROLA SC DIODES/OPTO b4E b3b7S5S D OQflbmM TET •MOT? MR820 MR821 MR822 MR824 MR826 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MR822 and MR826 are Motorola Preferred Devices D o s ì ì ì 'i u m -s D a t a S h e e t FAST RECOVERY POWER RECTIFIERS SUBMINIATURE SIZE, AXIAL LEAD MOUNTED	OCR Scan	MR820 MR821 MR822 MR824 MR826 MR826 r821 diodes MR826 diode CR72 MR826 equivalent diode sg 5 ts mr820 motorola	PDF
MR822 Abstract: mr821 MR826 MR824 A JR 3221 MR826 equivalent Text: M MR820 MR821MR822 MR824 MR826 M O T O R O L A S U B M IN IA T U R E SIZE, A X IA L LEAD M O UNTED FAST REC O V ER Y POWER R E C TIF IE R S FAST REC OVERY POWER R E C TIF IE R S . . . designed f o r special a p p lic a tio n s such as d c p o w e r supplies,	OCR Scan	MR820 MR821MR822 MR824 MR826 MR822 mr821 MR826 A JR 3221 MR826 equivalent	PDF
RECTIFIER DIODES Motorola mr 820 Abstract: diode p6000 MR826 equivalent diode p6000 j MR821 MR822 MR826 p6000 diode Variac MR826 diode Text: MR820,MR821,MR822, MR824.MR826 D a t a S h e e t FA S T R E C O V E R Y POWER R E C T IF IE R S SU BM IN IA TU R E S IZ E , A X IA L L E A D MOUNTED FA S T R E C O V E R Y POWER R E C T IF IE R S 50-600 V O LTS 5.0 A M PERES . . . designed for special applications such as dc power supplies,	OCR Scan	MR820 MR821 MR822, MR824 MR826 MR821n RECTIFIER DIODES Motorola mr 820 diode p6000 MR826 equivalent diode p6000 j MR822 MR826 p6000 diode Variac MR826 diode	PDF
MJE13005L Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	MJE13005-Q QW-R221-027 MJE13005L	PDF
je5740 Abstract: MJES740 Ferroxcube core MR826 diode JE5741 MJE5742* equivalent JE57 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE5740 M JE5741* M JE 5742* NPN Silicon Power Darlington Transistors ‘Motorola Pr#frr#d Dovte The MJE5740, 41, 42 Darlington transistors are designed for high-voltage power switching in inductive circuits. They are particularly suited for operation in applications	OCR Scan	MJE5740, JE5740 JE5741* fUE574 1-----UE574 MJES740 Ferroxcube core MR826 diode JE5741 MJE5742* equivalent JE57	PDF
equivalent mje13005 Abstract: mje13005 MJE13005L Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	MJE13005 O-126 O-220 O-220F MJE13005L QW-R203-018 equivalent mje13005 mje13005 MJE13005L	PDF
MJE13005H Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-H NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	MJE13005-H QW-R221-024 MJE13005H	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  1 FEATURES TO-220F TO-251 1 1 TO-263 TO-252 APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits 	Original	MJE13005 O-220F O-251 O-263 O-252 O-220 O-262 QW-R203-018.	PDF
2n2222 h parameter values Abstract: equivalent mje13005 transistor mje13005 to 126 equivalent transistor 2N2905 mje13005 Power Transistors TO-126 Case N-P-N SILICON POWER TRANSISTORS TO-126 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	MJE13005 O-126 O-263 O-220 O-220F QW-R203-018 2n2222 h parameter values equivalent mje13005 transistor mje13005 to 126 equivalent transistor 2N2905 mje13005 Power Transistors TO-126 Case N-P-N SILICON POWER TRANSISTORS TO-126	PDF
equivalent mje13005 Abstract: 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	MJE13005 O-220F QW-R219-001 equivalent mje13005 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve	PDF
equivalent mje13005 Abstract: Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	MJE13005 MJE13005L-x-T60-K QW-R203-018 equivalent mje13005 Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	MJE13005-K QW-R203-045	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	MJE13005-K QW-R203-045	PDF
transistor mje13005 TO-126 Abstract: to-126 transistor case Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	MJE13005 QW-R203-018. transistor mje13005 TO-126 to-126 transistor case	PDF

equivalent mje13005 Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	MJE13005 O-220 QW-R203-018 equivalent mje13005 2N2222 transistor output curve transistor mje13005 mje13005 equivalent	PDF
equivalent mje13005 Abstract: 1N4933 equivalent Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	MJE13005 O-220 QW-R203-018 equivalent mje13005 1N4933 equivalent	PDF
MJE5742 equivalent Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493 Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:	Original	MJE5740 MJE5742 MJE5742 MJE5742 equivalent 2n222 TRANSISTOR MJE20 2N2905 transistor 1N493	PDF
mje13009 equivalent Abstract: mje13009L 2N2222 NPN Transistor features MJE13009 MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are	Original	MJE13009 MJE13009 MJE13009L QW-R203-024 mje13009 equivalent mje13009L 2N2222 NPN Transistor features MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T	PDF
Untitled Abstract: No abstract text available Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER RANSISTORS The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching	Original	MJE13002 O-126 QW-R204-014	PDF
mje13003 equivalent Abstract: No abstract text available Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V	Original	MJE13003 QW-R201-062 mje13003 equivalent	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .	Original	MJE13003 290ns O-126 MJE13003L QW-R204-004	PDF
Untitled Abstract: No abstract text available Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V	Original	MJE13003 QW-R201-062	PDF
equivalent mje13005 Abstract: circuit based on MJE13005 MJE13005L-TA3-T transistor B c167 MJE13005-TA3-T MJE13005-TF3-T MJE210 MR826 1N4933 MJE13005 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	MJE13005 O-220 O-220F MJE13005L QW-R203-018 equivalent mje13005 circuit based on MJE13005 MJE13005L-TA3-T transistor B c167 MJE13005-TA3-T MJE13005-TF3-T MJE210 MR826 1N4933 MJE13005	PDF
equivalent mje13003 Abstract: mje13003 equivalent MJE13003-X-T60-F-K MJE13003 TO-92 MJE13003G Transistor 2N2222 NPN TO92 OF transistor 2N2222 to-92 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.	Original	MJE13003 290ns MJE13003L MJE13003G MJE13003L-x-T60-A-K MJE13003L-x-T60-F-lues QW-R204-004 equivalent mje13003 mje13003 equivalent MJE13003-X-T60-F-K MJE13003 TO-92 MJE13003G Transistor 2N2222 NPN TO92 OF transistor 2N2222 to-92	PDF

MR826 EQUIVALENT Search Results

MR826 EQUIVALENT Result Highlights (5)

MR826 EQUIVALENT Datasheets Context Search

r821 diodes

MR822

RECTIFIER DIODES Motorola mr 820

MJE13005L

je5740

equivalent mje13005

MJE13005H

Untitled

2n2222 h parameter values

equivalent mje13005

equivalent mje13005

Untitled

Untitled

transistor mje13005 TO-126

equivalent mje13005

equivalent mje13005

MJE5742 equivalent

mje13009 equivalent

Untitled

mje13003 equivalent

Untitled

Untitled

equivalent mje13005

equivalent mje13003