DR820
Abstract: MR826 diode
Text: Looking For: MR820, MR821, MR822, MR824, MR826 Replacements? DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP LEAD MOUNT FAST RECOVERY BUTTON DIODES MECHANICAL SPECIFICATION FEATURES
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MR820,
MR821,
MR822,
MR824,
MR826
MR821
DR820
MR826 diode
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MR826 diode
Abstract: MR824 MR821 MR826 equivalent MR820 MR822 DR820-1A MR826 3501S
Text: Looking For: MR820, MR821, MR822, MR824, MR826 Replacements? DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP LEAD MOUNT FAST RECOVERY BUTTON DIODES MECHANICAL SPECIFICATION FEATURES
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MR820,
MR821,
MR822,
MR824,
MR826
MR821
MR826 diode
MR824
MR821
MR826 equivalent
MR820
MR822
DR820-1A
3501S
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MR826
Abstract: MR821 MR826 diode MR820 MR822 MR824 MR826 equivalent MR-820
Text: MR820. MR826 5 Amp. Glass Passivated Fast Recovery Rectifier Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. 8.7 ± 0.3 59.5 ± 1 • Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point,
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MR820.
MR826
MR820
MR821
MR822
MR824
MR826
MR821
MR826 diode
MR820
MR822
MR824
MR826 equivalent
MR-820
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Untitled
Abstract: No abstract text available
Text: MR820. MR826 5 Amp. Glass Passivated Fast Recovery Rectifier Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. 8.7 ± 0.3 59.5 ± 1 • Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point,
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MR820.
MR826
MR820
MR821
MR822
MR824
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Alpha
Abstract: SB200-SB210 MR756 SB200-SB21 SB500-SB510 MR824 mr750 MR752 MR751 1n5819 die db810
Text: DIOTEC ELECTRONICS CORPORATION 18020 HOBART BLVD. GARDENA, CA 90248 USA PH: 310-767-1052 FX: 310-767-7958 email: sales@diotec-usa.com Web Site: www.diotec-usa.com 05 November 2009 DIOTEC ELECTRONICS CORP. - VALID PART NUMBER LIST New products have been added! These products are replacements for ON Semiconductor's1 lead mount button diodes MR750, MR751, MR752, MR754, MR756 see DR750-DR756 series
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MR750,
MR751,
MR752,
MR754,
MR756
DR750-DR756
MR820,
MR821,
MR822,
MR824,
Alpha
SB200-SB210
MR756
SB200-SB21
SB500-SB510
MR824 mr750
MR752
MR751
1n5819 die
db810
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SB550 1n5402
Abstract: BY2000 P1000J p1000M p1000s BY1800 1N4002 1N4003 SB840 1N4005
Text: 3A 5A 5/8 A 12 A 7.5±0.1 ±0.5 62.5 7,5±0.1 62.5±0.5 Type 7.5 ±0.1 Type ±0.5 6.3±0.1 Type 62.5±0.5 5.1-0.1 Type +0.5 62.5 -2.5 3.9 62.5 Voltage [V] Diodes / Rectifiers Standard Recovery 2A 5/6 A 10.15 A 15/20 A 25 A 30 A Current 1N4001 BYW27-50 1N5391
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BYW27-50
1N5391
1N5400K
1N5400
BY550-50
P600A
P1000A
PX1500A
1N4002
BYW27-100
SB550 1n5402
BY2000
P1000J
p1000M
p1000s
BY1800
1N4002
1N4003
SB840
1N4005
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MJE5742 equivalent
Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493
Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:
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MJE5740
MJE5742
MJE5742
MJE5742 equivalent
2n222 TRANSISTOR
MJE20
2N2905 transistor
1N493
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MJE5740
Abstract: transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MJE5742 MR826 OF 2n222
Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:
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MJE5740
MJE5742
MJE5740
MJE5742
r14525
MJE5740/D
transistor 2n222
2n222 TRANSISTOR
1N493
2N222
2N2905
MR826
OF 2n222
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2n222 TRANSISTOR
Abstract: 1N493 2N222 MJE5740 MJE5740G MJE5742 MJE5742G MR826
Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*
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MJE5740,
MJE5742
MJE5742
MJE5740
MJE5740
MJE5740/D
2n222 TRANSISTOR
1N493
2N222
MJE5740G
MJE5742G
MR826
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2n2222 npn bipolar junction
Abstract: 2N2905 MOTOROLA motorola transistor ignition MJE5740-D MJE5742 2N2905 equivalent 2N2905 MOTOROLA datasheet data sheet book TRANSISTOR 2N2222 2n2222 transistor to 92 MR826 diode
Text: MOTOROLA Order this document by MJE5740/D SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741 * MJE5742 * NPN Silicon Power Darlington Transistors *Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications
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MJE5740/D*
MJE5740/D
2n2222 npn bipolar junction
2N2905 MOTOROLA
motorola transistor ignition
MJE5740-D
MJE5742
2N2905 equivalent
2N2905 MOTOROLA datasheet
data sheet book TRANSISTOR 2N2222
2n2222 transistor to 92
MR826 diode
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transistor 2n222
Abstract: MJE5742G MJE5740 1N493 2N222 MJE5740G MJE5742 MR826 of diode 2n222 1K68
Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*
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MJE5740G,
MJE5742G
MJE5740G
MJE5742G
MJE5740
MJE5742
MJE5740/D
transistor 2n222
MJE5740
1N493
2N222
MJE5742
MR826
of diode 2n222
1K68
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2n222 TRANSISTOR
Abstract: Ferroxcube core MR826 equivalent 1N493 transistor 2n222
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
2n222 TRANSISTOR
Ferroxcube core
MR826 equivalent
1N493
transistor 2n222
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1N493
Abstract: transistor 2N222
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
1N493
transistor 2N222
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r821 diodes
Abstract: MR826 diode CR72 mr826 MR821 MR826 equivalent diode sg 5 ts MR822 mr820 motorola
Text: MOTOROLA SC DIODES/OPTO b4E b3b7S5S D OQflbmM TET •MOT? MR820 MR821 MR822 MR824 MR826 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MR822 and MR826 are Motorola Preferred Devices D o s ì ì ì 'i u m -s D a t a S h e e t FAST RECOVERY POWER RECTIFIERS SUBMINIATURE SIZE, AXIAL LEAD MOUNTED
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MR820
MR821
MR822
MR824
MR826
MR826
r821 diodes
MR826 diode
CR72
MR826 equivalent
diode sg 5 ts
mr820 motorola
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Untitled
Abstract: No abstract text available
Text: S7E D 34ST3BS 00007Mb 702 • F G R S MR820.MR826 FA60R ELECTRONICS Prñi'u-ÍH'ii1 ‘é^'j s ‘u. "* * Dimensions in mm. o P-6 Plastic Voltage 50 to 600 V. (X>| Q. Current 5.0 A. at 55°C. I ^7^-3 _ 59.5 nun._
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34ST3BS
00007Mb
MR820.
MR826
FA60R
DO-201AE
DO-201
DO-27A
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FA60R
Abstract: HVR062 MR820 MR826 3C63
Text: S7E D 34ST3BS 00007Mb 702 • F G R S MR820.MR826 FA60R ELECTRONICS Prñi'u-ÍH'ii1 ‘é^'j s ‘u. "* * Dimensions in mm. o P-6 Plastic Voltage 50 to 600 V. (X>| Q. Current 5.0 A. at 55°C. I ^7^-3 _ 59.5 nun._
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34ST3BS
007Mb
MR820.
MR826
FA60R
C2-17
DO-201AD
DO-27A
DO-201AE
HVR062
MR820
MR826
3C63
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D0201AE
Abstract: rm 826 FA60R L105 MR820 MR826 D0-201AE
Text: S7E D 34ST3BS 00007Mb 702 • F G R S MR820.MR826 FA60R ELECTRONICS Prñi'u-ÍH'ii1 ‘é^'j s ‘u. "* * Dimensions in mm. o P-6 Plastic Voltage 50 to 600 V. (X>| Q. Current 5.0 A. at 55°C. I ^7^-3 _ 59.5 nun._
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34ST3BS
007Mb
MR820.
MR826
FA60R
D0201AD
D0-201AE
DO-27A
D0-201AD
DO-201AE
D0201AE
rm 826
L105
MR820
MR826
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M70X
Abstract: Fagor GP
Text: -57E D FAGOR BMS'ìBgS G D D O b ì b 357 • FGRS MKöidU-OP MR826-GP FAGOR E L E C T R O N I C S Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. • Glass passivated junction Mounting instructions • Fast Recovery Diodes 1. Min. distance from body to soldering point,
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MR826-GP
DO-202AD
DO-27A
DO-201AE
DO-201AD
--------------DO-201AE
DO-201
DO-201AE
M70X
Fagor GP
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GP 821
Abstract: Fagor GP diode FAG 50 MR820GP MR822 GP 826 MR824
Text: -57E D FAGOR BMS'ìBgS G D D O b ì b 357 • FGRS MKöidU-OP MR826-GP FAGOR E L E C T R O N I C S Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. • Glass passivated junction Mounting instructions • Fast Recovery Diodes 1. Min. distance from body to soldering point,
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MR826-GP
MR820GP
GP 821
Fagor GP
diode FAG 50
MR820GP
MR822
GP 826
MR824
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MR826
Abstract: Fagor GP C5000/3300 HVR062 MR820GP
Text: -57E D BMS'ìBgS G D D O b ì b 357 • FGRS MKöidU-OP FAGOR MR826-GP FAGOR E L E C T R O N I C S Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. • Glass passivated junction Mounting instructions • Fast Recovery Diodes 1. Min. distance from body to soldering point,
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MR826-GP
C2-17
DO-201AD
DO-27A
DO-201AE
MR826
Fagor GP
C5000/3300
HVR062
MR820GP
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MR822
Abstract: mr821 MR826 MR824 A JR 3221 MR826 equivalent
Text: M MR820 MR821MR822 MR824 MR826 M O T O R O L A S U B M IN IA T U R E SIZE, A X IA L LEAD M O UNTED FAST REC O V ER Y POWER R E C TIF IE R S FAST REC OVERY POWER R E C TIF IE R S . . . designed f o r special a p p lic a tio n s such as d c p o w e r supplies,
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MR820
MR821MR822
MR824
MR826
MR822
mr821
MR826
A JR 3221
MR826 equivalent
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RECTIFIER DIODES Motorola mr 820
Abstract: diode p6000 MR826 equivalent diode p6000 j MR821 MR822 MR826 p6000 diode Variac MR826 diode
Text: MR820,MR821,MR822, MR824.MR826 D a t a S h e e t FA S T R E C O V E R Y POWER R E C T IF IE R S SU BM IN IA TU R E S IZ E , A X IA L L E A D MOUNTED FA S T R E C O V E R Y POWER R E C T IF IE R S 50-600 V O LTS 5.0 A M PERES . . . designed for special applications such as dc power supplies,
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MR820
MR821
MR822,
MR824
MR826
MR821n
RECTIFIER DIODES Motorola mr 820
diode p6000
MR826 equivalent
diode p6000 j
MR822
MR826
p6000 diode
Variac
MR826 diode
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BAI59
Abstract: B40 35-10 IN5345B Diodes In4007 HVR062 IN4007F RF2007 B40C3700-2200 b40c2000 rf2001
Text: FAGOR ^ NUMERICAL INDEX TRANSIENT VOLTAGE SUPPRESSOR DIODES RECTIFIER DIODES Plastic Case IN4007F. 1N4001F. IN4007 . 1N4001 . P513 . BY 133 . 1N5399 . 1N5391 . RF2007 . RF2001 . BY255 .
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IN4007F.
1N4001F.
IN4007
1N4001
1N5399
1N5391
RF2007
RF2001
BY255
BY251
BAI59
B40 35-10
IN5345B
Diodes In4007
HVR062
IN4007F
RF2007
B40C3700-2200
b40c2000
rf2001
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je5740
Abstract: MJES740 Ferroxcube core MR826 diode JE5741 MJE5742* equivalent JE57
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE5740 M JE5741* M JE 5742* NPN Silicon Power Darlington Transistors ‘Motorola Pr#f*rr#d Dovte* The MJE5740, 41, 42 Darlington transistors are designed for high-voltage power switching in inductive circuits. They are particularly suited for operation in applications
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MJE5740,
JE5740
JE5741*
fUE574
1-----UE574
MJES740
Ferroxcube core
MR826 diode
JE5741
MJE5742* equivalent
JE57
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