MPSA18
Abstract: MPSA18 equivalent
Text: MOTOROLA Order this document by MPSA18/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor NPN Silicon MPSA18 Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 45 Vdc Collector – Base Voltage
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MPSA18/D
MPSA18
MPSA18/D*
MPSA18
MPSA18 equivalent
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MPSA18 Low Noise Transistor NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 45 Vdc Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 6.5 Vdc Collector Current — Continuous
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MPSA18
226AA)
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mpsa18 equivalent
Abstract: mpsa18
Text: ON Semiconductort MPSA18 Low Noise Transistor NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 45 Vdc Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 6.5 Vdc Collector Current — Continuous
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MPSA18
226AA)
r14525
MPSA18/D
mpsa18 equivalent
mpsa18
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Untitled
Abstract: No abstract text available
Text: MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 45 Vdc Emitter −Base Voltage
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MPSA18
MPSA18/D
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MPSA18 Low Noise Transistor NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 45 Vdc Collector−Base Voltage VCBO 45 Vdc Emitter−Base Voltage VEBO 6.5 Vdc Collector Current — Continuous
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MPSA18
O-226AA)
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MPSA18
Abstract: No abstract text available
Text: ON Semiconductort MPSA18 Low Noise Transistor NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 45 Vdc Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 6.5 Vdc Collector Current — Continuous
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MPSA18
226AA)
r14525
MPSA18/D
MPSA18
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MPSA18 y equivalent
Abstract: MPSA18 MPSA18RLRAG MPSA18RLRMG MPSA18G MPSA18 equivalent mps a18 MPSA18RLRA MPSA18RLRM MPSA18RLRP
Text: MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 45 Vdc Emitter −Base Voltage
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MPSA18
MPSA18/D
MPSA18 y equivalent
MPSA18
MPSA18RLRAG
MPSA18RLRMG
MPSA18G
MPSA18 equivalent
mps a18
MPSA18RLRA
MPSA18RLRM
MPSA18RLRP
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transistor motorola 2n3053
Abstract: Transistor BC107 motorola transistor equivalent 2n5551 symbol transistor BC108 transistor equivalent book 2N5401 BC107 Transistor application notes 2N2904 transistor TO92 Transistor BC107b motorola MOTOROLA 2n2102 TRANSISTOR TRANSISTOR BC107B die
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor MPSA18 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 45 Vdc Collector – Base Voltage VCBO 45
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MPSA18
226AA)
RqJA218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
transistor motorola 2n3053
Transistor BC107 motorola
transistor equivalent 2n5551
symbol transistor BC108
transistor equivalent book 2N5401
BC107 Transistor application notes
2N2904 transistor TO92
Transistor BC107b motorola
MOTOROLA 2n2102 TRANSISTOR
TRANSISTOR BC107B die
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MPSA18RLRAG
Abstract: MPSA18RLRMG MPSA18G k mps 850 B MPSA18 mpsa18 equivalent mps a18
Text: MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 45 Vdc Emitter −Base Voltage
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MPSA18
MPSA18/D
MPSA18RLRAG
MPSA18RLRMG
MPSA18G
k mps 850 B
MPSA18
mpsa18 equivalent
mps a18
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XL1225 equivalent
Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
Text: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055
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2N2955
2SA952
2N3055
2SB1426
2N3417
XL1225 equivalent
2N3053 equivalent
BF422 EQUIVALENT
bc238 equivalent
2N6397 equivalent
2N5551 equivalent
2SB772 equivalent
BC109 BC184 BC549
2sd880 equivalent
BT169 equivalent
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2n1613 equivalent
Abstract: BC237 diode l 0607
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection
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SC-70/SOT-323
BAV99WT1
BAV99LT1.
BAV99RWT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2n1613 equivalent
BC237
diode l 0607
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
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MPSA18
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor NPN Silicon MPSA18 Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Sym b ol Value U nit C ollecto r- Emitter Voltage VCEO 45 Vdc C ollector-B ase Voltage VCBO 45 Vdc E m itter-Base Voltage
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MPSA18
MPSA18
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mpsa18
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor NPN Silicon MPSA18 Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 45 Vdc C ollector-B ase Voltage VCBO 45 Vdc E m itte r-B a se Voltage
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MPSA18
mpsa18
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MPSA18
Abstract: MPSA18 equivalent
Text: MPSA18* MAXIM UM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage CASE 29-04, STYLE 1 TO-92 TO-226AA Ve b O 6.5 Vdc Collector Current — Continuous 'C 200 mAdc Total Device Dissipation @ Ta = 25°C
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MPSA18*
O-226AA)
MPSA18
MPSA18 equivalent
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MOTOROLA S
Abstract: No abstract text available
Text: Symbol Value Unit Collector-Emitter Voltage Rating v CEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage v EBO 6.5 Vdc Collector Current — Continuous 'c 200 mAdc Total Device Dissipation GL Derate above 25CC = 25CC Pd 625 5.0 mW mW/X Total Device Dissipation a T c = 25°C
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MPSA18
MOTOROLA S
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