MPSa56 equivalent
Abstract: MPSa05 equivalent MPSa06 equivalent BC237 bc547 npn Mpsa92/MPSa56 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN MPSA05 MPSA06* PNP MPSA55 MPSA56* COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Symbol MPSA05 MPSA55 MPSA06
|
Original
|
MPSA05
MPSA06*
MPSA55
MPSA56*
MPSA06
MPSA56
Ch218A
MSC1621T1
MPSa56 equivalent
MPSa05 equivalent
MPSa06 equivalent
BC237
bc547 npn
Mpsa92/MPSa56 equivalent
|
PDF
|
MP5A05
Abstract: mpsa55 MPSA55 motorola J5001 MPSA05 motorola mpsa56 Motorola mpsa06 MPSA05
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors NPN NPN MPSA05 MPSA06* PNP MPSA55 MPSA56* PNP EMITTER EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Symbol MPSA05 MPSA55 MPSA06 MPSA56 Unit Collector- Emitter Voltage
|
OCR Scan
|
MPSA05
MPSA06*
MPSA55
MPSA56*
MPSA06
MPSA56
MPSA55/56
AN469)
MP5A05
MPSA55 motorola
J5001
MPSA05 motorola
mpsa56 Motorola
|
PDF
|
MPSA05
Abstract: MPSA55 MPSA56 AN469 MPSA06 10STC
Text: MOTOROLA Order this document by MPSA05/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN MPSA05 MPSA06* PNP MPSA55 MPSA56* COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS
|
Original
|
MPSA05/D
MPSA05
MPSA06*
MPSA55
MPSA56*
MPSA06
MPSA56
MPSA05/D*
MPSA05
MPSA55
MPSA56
AN469
MPSA06
10STC
|
PDF
|
MPSA05
Abstract: MPS-A05 mpsa0 MPSA56
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors COLLECTOR 3 NPN MPSA05 MPSA06* PNP MPSA55 MPSA56* COLLECTOR 3 2 BASE BASE NPN PNP 1 1 EMITTER EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Symbol MPSA05 MPSA55 C o llector-E m itter Voltage
|
OCR Scan
|
MPSA05
MPSA06*
MPSA55
MPSA56*
MPSA55
MPSA06
MPSA56
MPS-A05
mpsa0
MPSA56
|
PDF
|
mpsa63 replace
Abstract: BC237 MPSA63 equivalent J111
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit
|
Original
|
MPSA62
MPSA63
MPSA64
MPSA55,
MPSA56
MPSA05,
MPSA06
MPSA62
mpsa63 replace
BC237
MPSA63 equivalent
J111
|
PDF
|
MPSA63
Abstract: MPSA05 MPSA06 MPSA55 MPSA56 MPSA62 MPSA64
Text: MOTOROLA Order this document by MPSA62/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 thru MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS
|
Original
|
MPSA62/D
MPSA62
MPSA64
MPSA55,
MPSA56
MPSA05,
MPSA06
MPSA63
MPSA63
MPSA05
MPSA55
MPSA56
MPSA62
MPSA64
|
PDF
|
MPSA63
Abstract: MPSA05 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64* PNP Silicon COLLECTOR 3 MPSA55, MPSA56 For Specifications, See MPSA05, MPSAÓ6 Data “ Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol Rating MPSA62 MPSA63 MPSA64
|
OCR Scan
|
MPSA62
MPSA63
MPSA64*
MPSA55,
MPSA56
MPSA05,
MPSA64
-5K-10K
MPSA05 motorola
|
PDF
|
MPSA64
Abstract: MPSA63 MPSA05 MPSA06 MPSA55 MPSA56 MPSA62
Text: MOTOROLA Order this document by MPSA62/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 thru MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS
|
Original
|
MPSA62/D
MPSA62
MPSA64
MPSA55,
MPSA56
MPSA05,
MPSA06
MPSA63
MPSA64
MPSA63
MPSA05
MPSA55
MPSA56
MPSA62
|
PDF
|
mpsa06
Abstract: mpsa56 MPS-A06 MPSA05 motorola MPS-A56 MPSA06/Q2N3053
Text: M AXIM U M RATINGS Rating Symbol MPSA05 MPSA06 MPSA55 MPSA56 Unit Collector-Emitter Voltage v CEO 60 80 Vdc Collector-Base Voltage v CBO 60 80 Vdc Emitter-Base Voltage v EBO Collector Current — Continuous 4.0 Vdc 'c 500 m Adc Total Device Dissipation @ T/\ = 25°C
|
OCR Scan
|
MPSA05
MPSA06
MPSA55
MPSA56
MPSA06*
MPSA56*
O-226AA)
MPS-A06
MPSA05 motorola
MPS-A56
MPSA06/Q2N3053
|
PDF
|
MPSA63
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D a rlin g to n T ra n s is to rs M P S A 62 M P S A 63 M PSA 64* PNP Silicon COLLECTOR 3 M PSA 55, M P S A 56 For Specifications, See MPSA05, MPSA06 Data ‘ Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Rating
|
OCR Scan
|
MPSA05,
MPSA06
MPSA62
MPSA63
MPSA64
|
PDF
|
MPSA63
Abstract: MPSA64 MPSA05 MPSA06 MPSA55 MPSA56 MPSA62 MPSA75 MPS-A63 MPS-A62
Text: MPSA55, MPSA56 1 For Specifications, See MPSA05, MPSA06 Data thru M A XIM U M RATINGS Rating Sym bol Collector-Emitter Voltage M PSA62 M PSA63 M PSA 6 4 Unit VC ES -2 0 -3 0 Vdc Collector-Base Voltage VCBO -2 0 -3 0 Vdc Emitter-Base Voltage vebo - 10 Vdc ic
|
OCR Scan
|
MPSA55,
MPSA56
MPSA05,
MPSA06
MPSA62
MPSA63
MPSA64
MPSA62
MPSA64*
MPSA05
MPSA55
MPSA56
MPSA75
MPS-A63
MPS-A62
|
PDF
|
MPSA06 transistor
Abstract: MPS-8000 mps-a06 MPSA05 motorola SILICON DICE motorola
Text: MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC 34 &F|t.3b72SS 0030000 7 CDIODES/OPTO 3 ^c SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) D IE N O . MPSAC05 — LIN E S O U R C E — T ' 2 38008 2- / NPN D M B 1 08 This die provides performance similar to that of the following device types:
|
OCR Scan
|
3b72SS
MPSAC05
MPS3402
MPS8000
MPSA05
MPSA06
MPSA06 transistor
MPS-8000
mps-a06
MPSA05 motorola
SILICON DICE motorola
|
PDF
|
motorola mpsu05
Abstract: MPSU06 mpsu05 MPSU07 MPS-U05 MPS-U06 MPSU-05
Text: M O T O R O L A SC i D I O D E S / O P T O J 6367255 MOTOROLA SC 34 DË"|fc.3b7aSS 0030020 34 c D IO D ES/O PTO 38028 T-33-01 S IL IC O N S M A L L -S IG N A L T R A N S IS T O R D IC E (continued) MPSUC05 die no. LINE SOURCE — DEL504 D NPN This die provides performance similar to that of the following device types:
|
OCR Scan
|
T-33-01
DEL504
MPSUC05
2N6552
2N6553
MPSA05
MPSA06
MPSU05
MPSU06
MPSU07
motorola mpsu05
MPSU07
MPS-U05
MPS-U06
MPSU-05
|
PDF
|
AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
|
OCR Scan
|
Trans-611
DT1521
2N2270
BC107-182KS
ESC182KAS
ESC182KBS
ESC1Q8-183KS
EiC183KBS
8C183KCS
BC109-184KS
AL102 ATES
2N2222A mps
KR206
AD149
TIS58
TIS88
SFT353
2N2431
2N4265
BFY29
|
PDF
|
|
bc550 bc560
Abstract: BC415 BC548 ,BC558 MPSA18 BC558 BC327 BC337 noise figure BC337-16 CBE BC337-25 CBE BC547A bc447 MPSA18 BC550 BC547B CBE
Text: Small-Signal Plastic P L A S T IC - E N C A P S U L A T E D S M A L L - S IG N A L T R A N S IS T O R S F O R IN D U S T R IA L A N D C O N S U M E R A P P L IC A T IO N S The Small-Signal Plastic Transistors represent Motorola's broadest product line. From R F/V H F/U H F
|
OCR Scan
|
TRAN50
bc550 bc560
BC415
BC548 ,BC558
MPSA18 BC558
BC327 BC337 noise figure
BC337-16 CBE
BC337-25 CBE
BC547A bc447
MPSA18 BC550
BC547B CBE
|
PDF
|
2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
|
Original
|
MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
|
PDF
|
BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
|
Original
|
MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
|
PDF
|
BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
|
Original
|
MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
|
PDF
|
BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
|
Original
|
MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
|
PDF
|
MPSA18 BC550
Abstract: BC459C bc459 BC414 MOTOROLA BC650C 2N4125 EBC bc550 bc560 BC651C BC337/BC327 N5089
Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued Low Noise and Good H p £ Linearity These devices are designed to use on applications where good H p ^ linearity and low noise characteristics are required Instrumentation, Hi-Fi Preamplifier. Hfe@ (Volts) Amb.
|
OCR Scan
|
BC239
BC309
BC413
BC415
BC414
BC416
BC549
BC559
BC549B
MPSA18 BC550
BC459C
bc459
BC414 MOTOROLA
BC650C
2N4125 EBC
bc550 bc560
BC651C
BC337/BC327
N5089
|
PDF
|
BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
|
Original
|
MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
|
PDF
|
BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
|
Original
|
MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
|
PDF
|
BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
|
Original
|
MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
|
PDF
|
2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
|
Original
|
MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
|
PDF
|