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    MPS3903 Search Results

    MPS3903 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MPS3903 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    MPS3903 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MPS3903 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MPS3903 National Semiconductor NPN General Purpose Transistors Scan PDF
    MPS3903 National Semiconductor NPN Transistors Scan PDF
    MPS3903 National Semiconductor General Purpose Amplifiers and Switches Scan PDF
    MPS3903 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF

    MPS3903 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: <^£.tni-don.auctoi ^Pioaucti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MPS6576 MAXIMUM RATINGS Symbol Value Unit Collector-Emittar Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 45


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    PDF MPS6576 O-226AA)

    PN2222A MOTOROLA

    Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate


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    PDF RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 PN2222A MOTOROLA valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A

    2N3609

    Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate


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    PDF RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 2N3609 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625

    KT503A

    Abstract: 2SC1330 BC340 LOW-POWER SILICON NPN 2N2534 45M40 2N2909 2N2868
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate


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    PDF RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 KT503A 2SC1330 BC340 LOW-POWER SILICON NPN 2N2534 45M40 2N2909 2N2868

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


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    PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


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    PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    MPS6507

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. 'c ^CBO ^CEO V EBO (V) Min (V) Min (VI Min MPS3711 30 30 6 0.625 0.05 MPS3903 60 40 6 0.625 0.2 PD (W) (A) @Tc=25Gc *C80 ^CB 'c es


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    PDF MPS6514 MPS6520 MPS6521 MPS6S30 MPS6531 MPS6532 MPS6539 MPS6540 MPS6541 O-92-3 MPS6507

    MPS3709

    Abstract: MPS3563 MPS3646 MPS3693 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3710
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBO (V) Min V CEO V ESO (V) Min (V) Min Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) PD *c (W) (A) @Tc=25°c 'cBO ^CB (mA) 0 (V ) Max MPS3563 30 12 2 0.625 0.05 0.05 MPS3646


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    PDF MPS3563 MPS3646 MPS3693 NIPS3694 MPS6507 MPS651 MPS6511 MPS6512 MPS6513 MPS6514 MPS3709 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3710

    2N915

    Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
    Text: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:


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    PDF DMB105 2C3904 2N915 2N916 2N2716* 2N2923 2N2924 2N2925 2N2926* 2N3390* 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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    MPS3563

    Abstract: MPS3646 MPS3693 MPS3694 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3709
    Text: TO-92 Plastic Package Transistore NPN Maximum Ratings Type No. ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd 'c (W) (A) 0Tc=25“( 'cBO ^C 8 'ces ^C E (UA) (V> (UA) Max Max MPS3563 30 12 2


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    PDF MPS3563 MPS3646 MPS3693 MPS3694 MPS650 MPS6507 MPS651 MPS6511 MPS6512 MPS6513 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3709

    bcs47

    Abstract: BCS48 BC170C 8C548 BF494 ph 06 BC170B BF494 ph 04 cd639 BCS48B bf238
    Text: 1 < 3 2 1 DIM MIN MAX A 4,32 5,33 8 4,45 T 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 H 1,14 1,53 K 12,70 - 1,40 ALL D IM EN SIO N S IN M M. Pin Configuration Available in TO-92 S JÜ - A A SEC ^ CDU. Code Style Pin 1 TO-92 Pin 2 Pin 3 Emitter


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    PDF O-92-1 O-92-2 O-92-3 O-92-4 PN5179 PN5449 PN5B16 PN7055 TIS87 bcs47 BCS48 BC170C 8C548 BF494 ph 06 BC170B BF494 ph 04 cd639 BCS48B bf238

    PN222A

    Abstract: 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 TN2219 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A
    Text: NATL SEMICOND DISCRETE SEE D • bSQ113Q 0D37773 S ■ T-Z7-0! NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Min V Cbo(V) Min Min Max Ic/V c (mA/V) Ft (MHz) Min PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 30 30 30 30 30 30 30


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    PDF bS01130 0D37773 PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 O-237 PN222A 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A

    MPS6544

    Abstract: MPS6516 MPS-6544 MPS6512 MPS6513 MPS6515 MPS6519 2N4125 MPS6514 MPS6517
    Text: MOTOROLA SC 6367254 -C XS TR S /R MOTOROLA SC J> F |fc .3 b 7 2 S M QDfllflll "i FJ 96D 8 1 8 11 XSTRS/R F 1 ' MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MPS6512, MPS6513 MPS6514, MPS6515 MPS6516 thru MPS6518 MPS6519 V ceo Collector-Base Voltage


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    PDF -p-21-21 MPS6512, MPS6513 MPS6514, MPS6515 MPS6516 MPS6518 MPS6519 MPS6512 MPS6544 MPS-6544 2N4125 MPS6514 MPS6517

    transistor SM 2174

    Abstract: MPS-92 MPS929
    Text: MOTOROLA SC «STRS/R 6367254 F> T T ~ ^ | f e 3 t 7 a s4 MOTOROLA SC OOai?tb 8 96D 8 1 7 6 6 XSTRS/R F T-2S-21 MPS929 MPS930A MAXIMUM RATINGS Symbol MPS929 MPS930A Unit Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 45 60 Vdc V e BO 5.0


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    PDF T-2S-21 MPS929 MPS930A MPS930A O-226AA) transistor SM 2174 MPS-92

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    PN544

    Abstract: TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101
    Text: This NPN Transistors NATL @ . VCE SAT VBE(SAT) (V) (V) c Max Min Max v * C0b (PF) Max * ‘ off (ns) Max NF (dB) Max hFE Min Max 5 500 18 75 225 2 4.5 18 5 500 18 75 225 2 4.5 25 25 5 100 25 90 180 2 (1 kHz) 10 10 10 TO-92 (94) 25 25 5 100 25 150 300


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    PDF T-29-Of T-29-01 PN544 TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101

    MPS6511

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO V CEO V EBO (V) (V) (V) PD (W) *c (A) Min Min Min Tc=25°( MPS3563 30 12 2 0.625 0.05 0.05 MPS3646 40 15 5 0.625 0.3 MPS3693


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    PDF MPS3563 MPS3646 MPS3693 MPS3694 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS6511 MPS6511

    2N5133

    Abstract: TIS92 2N4286 cm 45-12 MPS6566 transistor 2N2712 2N3707 2N3827 2N915
    Text: NATL SENICOND 6 5 0 1130 NATL {D ISCRETE} SEMICOND, àfl <D I S C R E T E L ' DeT| b S G H S D 00353^ 5 28C 35 3 9 5 o ' S O “ ' w •</) c Ç0 u. eg « Z 3 5 Q . Z ■gu. g 2 - E Ï— H < X « S es = > if o3 I « § £ * >u HI — >U S M in in in -U 1


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    PDF tSD113D hSD113D 2N5133 TIS92 2N4286 cm 45-12 MPS6566 transistor 2N2712 2N3707 2N3827 2N915

    ST3904

    Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
    Text: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.


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    mps3904

    Abstract: MPS3903 MPS3904 transistor To92 transistor
    Text: MOTOROLA SC 1EE D XSTRS/R F I ti3ti7aSM Symbol Rating Unit Value VCEO - 40 Vdc Collector-Base Voltage VcBO 60 ' Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 100 mAdc Total Device Dissipation @ T a = 25°C Derate above 25°C Pd


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    PDF MPS3903 MPS3904 O-226AA) mps3904 MPS3904 transistor To92 transistor

    PN222A

    Abstract: 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A
    Text: NATL SEMICOND DISCRETE SEE D • bS0113Q 0D37773 S ■ T -Z 7 -0 Ì NPN General Purpose Transistors by Ascending Vceo (continued) lc /V < * (m A /V ) Ft (MHz) Min 600 120 300 120 300 300 300 10/10 150/10 150/10 150/10 150/10 50/2.0 150/10 700 250 250 250


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    PDF bS0113Q 0D37773 PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 2N1613 PN222A 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A