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    MPS3563 TRANSISTOR Search Results

    MPS3563 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MPS3563 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPS3563

    Abstract: MPS918 MPS3563G MPS3563RLRA MPS3563RLRAG MPS918G Marking code mps
    Text: MPS918, MPS3563 MPS918 is a Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MPS918 MPS3563 Collector −Base Voltage


    Original     		PDF MPS918, MPS3563 MPS918 MPS918 MPS918/D MPS3563 MPS3563G MPS3563RLRA MPS3563RLRAG MPS918G Marking code mps

    MPS918

    Abstract: MPS918 equivalent 3810 to equivalent ic MPS3563 IC 2910
    Text: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 30 Vdc Emitter–Base Voltage


    Original     		PDF MPS918* MPS3563 MPS918 226AL) r14525 MPS918/D MPS918 MPS918 equivalent 3810 to equivalent ic MPS3563 IC 2910

    MPS918

    Abstract: No abstract text available
    Text: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 30 Vdc Emitter–Base Voltage


    Original     		PDF MPS918 MPS3563 MPS918* MPS3563 226AL)

    MPS3563

    Abstract: No abstract text available
    Text: MOTOROLA Order this document MPS918/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage


    Original     		PDF MPS918/D MPS918* MPS3563 MPS918 226AA) MPS918/D* MPS3563

    Untitled

    Abstract: No abstract text available
    Text: MPS918, MPS3563 MPS918 is a Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Rating Collector −Emitter Voltage Value VCEO MPS918 MPS3563 Collector −Base Voltage


    Original     		PDF MPS918, MPS3563 MPS918 MPS918 MPS918/D

    MPS918 equivalent

    Abstract: BC237 MPS3563 transistor MPS3563
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage VCEO 15 12 Vdc Collector – Base Voltage


    Original     		PDF MPS918* MPS3563 MPS918 MPS3563 226AA) Resist218A MSC1621T1 MSC2404 MSD1819A MV1620 MPS918 equivalent BC237 MPS3563 transistor

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector −Emitter Voltage VCEO 15 12 Vdc Collector −Base Voltage VCBO 30 30 Vdc Emitter −Base Voltage


    Original     		PDF MPS918 MPS3563 MPS918* MPS3563 O-226AL)

    MPS3563

    Abstract: mps918
    Text: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 30 Vdc Emitter–Base Voltage


    Original     		PDF MPS918* MPS3563 MPS918 226AL) r14525 MPS918/D MPS3563 mps918

    MPS918

    Abstract: MPS918 equivalent MPS3563
    Text: MOTOROLA Order this document MPS918/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage


    Original     		PDF MPS918/D MPS918* MPS3563 MPS918 226AA) MPS918/D* MPS918 MPS918 equivalent MPS3563

    TO226AA

    Abstract: 226AA msc2295 P2N2222A MPS3904
    Text: Bipolar Transistors RF Transistors NPN PNP V BR CEO IC mA Max Min hFE Max fT MHz Min Cap pF Max CRB = 0.65 CRE = 0.65 MPSH10 − 25 − 60 − 650 BF959 − 20 100 40 − 600 MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1 − − − − 15 15 12 12 − 50 50 50


    Original     		PDF MPSH10 BF959 MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1 MMBTH10-4LT1 MMBT918LT1 BSV52LT1 TO226AA 226AA msc2295 P2N2222A MPS3904

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon •Motorola Preferred Device COLLECTOR 3 2 BASE" 1 EMITTER MAXIMUM RATINGS Symbol MPS918 MPS3563 Unit Col lector-E m itter Voltage Rating VCEO 15 12 Vdc C ollector-B ase Voltage


    OCR Scan     		PDF MPS918* MPS3563 MPS918 MPS3563

    MPS3563

    Abstract: MPS918
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon 'Motorola Preferred Device MAXIMUM RATINGS Rating Unit Symbol MPS918 MPS3563 12 Vdc 30 Vdc v CEO 15 C ollector-Base Voltage VCBO 30 E m itter-B ase Voltage vebo 3.0 C ollector-Em itter Voltage


    OCR Scan     		PDF MPS918* MPS3563 MPS918 MPS3563

    MPS3563

    Abstract: lt 2904
    Text: MPS918* MPS3563 MAXIMUM RATINGS Rating 2 Symbol MPS918 MPS3563 Unit C o lle c to r-E m itte r V o lt a g e VCEO 15 12 Vdc C o lle c to r -B a se V o lt a g e VCBO 30 30 Vdc E m itte r-B a se V o lt a g e v EBO 3.0 2.0 Vdc C o lle c to r C u rre n t — C o n t in u o u s


    OCR Scan     		PDF MPS918* MPS3563 MPS918 T0-226AA) PS918 PS3563 PS918 MPS3563 lt 2904

    MPS6511

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO V CEO V EBO (V) (V) (V) PD (W) *c (A) Min Min Min Tc=25°( MPS3563 30 12 2 0.625 0.05 0.05 MPS3646 40 15 5 0.625 0.3 MPS3693


    OCR Scan     		PDF MPS3563 MPS3646 MPS3693 MPS3694 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS6511 MPS6511

    mps918

    Abstract: MPS3563 MPS3663 MPS-3563
    Text: MPS918 SILICON MPS3563 NPN SILICON ANNULAR TRANSISTORS NPN SILICON . . . designed fo r V H F/U H F low-level am plifier, and oscillator applications. A M PLIFIER TRANSISTORS • One-Piece, Injection-Molded Plastic Unibloc R eliability • Low C ollector-Em itter Saturation Voltage VcE(sat) = 0-4 Vdc (Maxi @ I q = 10 mAdc


    OCR Scan     		PDF MPS918 MPS3563 MPS918 MPS3663 PS918 MPS3563 f-140 MPS-3563

    MPS3709

    Abstract: MPS3563 MPS3646 MPS3693 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3710
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBO (V) Min V CEO V ESO (V) Min (V) Min Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) PD *c (W) (A) @Tc=25°c 'cBO ^CB (mA) 0 (V ) Max MPS3563 30 12 2 0.625 0.05 0.05 MPS3646


    OCR Scan     		PDF MPS3563 MPS3646 MPS3693 NIPS3694 MPS6507 MPS651 MPS6511 MPS6512 MPS6513 MPS6514 MPS3709 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3710

    Untitled

    Abstract: No abstract text available
    Text: MOT OROL A SC MPS3563 XSTRS/R F 1EE 0 | b3b?ZS4 □ Oflfe.Gfc.'i 0 | For Specifications, See MPS918 Data M A X IM U M RATINGS Symbol Value Collector-Emitter Voltage vCEO 30 Vdc Collector-Base Voltage v CBO 40 Vdc Emitter-Base Voltage Rating Unit v EBO 5.0


    OCR Scan     		PDF MPS3563 MPS918

    MPS3563

    Abstract: No abstract text available
    Text: MPS918* MPS3563 M AXIM U M RATINGS Symbol Rating M PS918 M PS3563 Unit Collector-Em itter V oltage v CEO 15 12 V dc C ollector-Base V oltage v CBO 30 30 V dc Em itter-Base V oltage v EBO 3.0 2.0 Vdc Collector Current — C o n tin u o u s 'c 50 m Adc Total Device D issip a tio n a Ty\ = 25<’C


    OCR Scan     		PDF MPS918* MPS3563 PS918 PS3563 O-226AA) MPS918 PS918 MPS3563

    2N5222

    Abstract: 2n3544 2n918 die 2N918 motorola SILICON SMALL-SIGNAL DICE MPSH10 die 2n917 die MPS-65-48 MPS-6539 2N917
    Text: 34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC DF|t.Bb7aS5 ODBTTTS 3 DIODES/OPTO 3^C 37972 D •r-~3/w<r SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C918 DIE NO. — NPN LINE SOURCE — DSL75 & This die provides performance similar to that of the following device types:


    OCR Scan     		PDF DSL75 2N917 2N918 2N3544* 2N5222 MM1941 MMCM918 MMT918 MPS918 MPS3563 2n3544 2n918 die 2N918 motorola SILICON SMALL-SIGNAL DICE MPSH10 die 2n917 die MPS-65-48 MPS-6539

    SE3001

    Abstract: SE-3001 to106 SE5006 2n3564 2N5770 2N3563 2N5130 TO-106 SE3002
    Text: TRANSISTORS—SMALL SIGNAL NPN RF—IF AMPLIFIER AND OSCILLATOR TRAN SISTO RS BY A SCEN D IN G FREQUENCY PLASTIC PACKAGE 10.0 25.0 25.0 28.0 28.0 29.0 29.0 30.0 20.0 20.0 @ @ @ @ @ @ @ @ @ @ 14.0 14.0 15.0 15.0 17.0 19.0 20.0 12.0 12.0 15.0 (30.0) (30.0)


    OCR Scan     		PDF 2N5127 PE3100 SE1010 2N3564 PE5025 PE5013 PE5029 PE5030B 2N3688 2N3689 SE3001 SE-3001 to106 SE5006 2N5770 2N3563 2N5130 TO-106 SE3002

    n3904

    Abstract: CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640
    Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued RF Transistors The RF transistors are designed for Small Signal am plification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges. Several types are AGC characterised. The transistors are listed in


    OCR Scan     		PDF mpsh17 mpsh10 bf374 bf375 bf959 mps918 n3904 2n3903 2n4400 mps2369 CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640

    MPS6507

    Abstract: MPS6511 2N5770 MPS3563 MPS6539 MPS6547 MPS918 PN5130 T092 T092-1
    Text: 5048836 K S L M IC R Q D EV îC gS INC _ K S L MICRODEVICES INC 14 14CT 00103 CASE STY LE a v CBO b v CEO BVebo *CB0 Min Min Min Max e T DËT| SDMflñBL t. RF-IF AMPLIFIERS AND O SCILLATO RS TYPE D NPN TRANSISTORS V CB *C hFE Min-Max V CE & v CE<sat Max V BE sat)


    OCR Scan     		PDF MPS918 MPS3563 8mA/10V PN5130 8mA/10V 2N5770 /400il MPS6507 2mA/10V 700MHz MPS6511 MPS6539 MPS6547 T092 T092-1

    Untitled

    Abstract: No abstract text available
    Text: AL L E G R O M I C R O S Y S T E M S INC 8514019 SPRAGUE. T3 D • 0SGM33Ô OGOBS^Ü S E M I C O N D S / ICS 4 ■ ALGR 93D 0359.0 D r-a7-ft? _' PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C


    OCR Scan     		PDF 0SGM33Ô MPS2712 MPS2714 MPS2716 MPS2923 MPS2924 MPS2925 MPS2926 MPS3390 MPS3391

    transistor 2N3563

    Abstract: 2N3563 2N3564 2n3600 2N915 KM9018 MPS3563 MPS3693 MPS3694 MPS3826
    Text: RF-IF High Frequency Transistors MAXIMUM RATINGS HFE VCE sat n IC (mA) VCE (V) max (V) IC (mA) min (MHz) Cob Cre* max (PF) 198 # 200 160 400 1 3 8 10 10 5 1 10 10 10 0.5 0.4 10 10 - - . . - 400 600 600 200 200 1.7 1.7 1.7 3.5 3.5 40 100 25 25 20 160 400 -


    OCR Scan     		PDF KM9018 O-92A MPS918 MPS3563 MPS3693 MPS3694 transistor 2N3563 2N3563 2N3564 2n3600 2N915 MPS3826