MPS3563
Abstract: MPS918 MPS3563G MPS3563RLRA MPS3563RLRAG MPS918G Marking code mps
Text: MPS918, MPS3563 MPS918 is a Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MPS918 MPS3563 Collector −Base Voltage
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MPS918,
MPS3563
MPS918
MPS918
MPS918/D
MPS3563
MPS3563G
MPS3563RLRA
MPS3563RLRAG
MPS918G
Marking code mps
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MPS918
Abstract: MPS918 equivalent 3810 to equivalent ic MPS3563 IC 2910
Text: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 30 Vdc Emitter–Base Voltage
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MPS918*
MPS3563
MPS918
226AL)
r14525
MPS918/D
MPS918
MPS918 equivalent
3810 to equivalent ic
MPS3563
IC 2910
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MPS918
Abstract: No abstract text available
Text: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 30 Vdc Emitter–Base Voltage
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MPS918
MPS3563
MPS918*
MPS3563
226AL)
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MPS3563
Abstract: No abstract text available
Text: MOTOROLA Order this document MPS918/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage
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MPS918/D
MPS918*
MPS3563
MPS918
226AA)
MPS918/D*
MPS3563
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Untitled
Abstract: No abstract text available
Text: MPS918, MPS3563 MPS918 is a Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Rating Collector −Emitter Voltage Value VCEO MPS918 MPS3563 Collector −Base Voltage
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MPS918,
MPS3563
MPS918
MPS918
MPS918/D
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MPS918 equivalent
Abstract: BC237 MPS3563 transistor MPS3563
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage VCEO 15 12 Vdc Collector – Base Voltage
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MPS918*
MPS3563
MPS918
MPS3563
226AA)
Resist218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MPS918 equivalent
BC237
MPS3563 transistor
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector −Emitter Voltage VCEO 15 12 Vdc Collector −Base Voltage VCBO 30 30 Vdc Emitter −Base Voltage
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MPS918
MPS3563
MPS918*
MPS3563
O-226AL)
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MPS3563
Abstract: mps918
Text: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 30 Vdc Emitter–Base Voltage
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MPS918*
MPS3563
MPS918
226AL)
r14525
MPS918/D
MPS3563
mps918
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MPS918
Abstract: MPS918 equivalent MPS3563
Text: MOTOROLA Order this document MPS918/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage
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MPS918/D
MPS918*
MPS3563
MPS918
226AA)
MPS918/D*
MPS918
MPS918 equivalent
MPS3563
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TO226AA
Abstract: 226AA msc2295 P2N2222A MPS3904
Text: Bipolar Transistors RF Transistors NPN PNP V BR CEO IC mA Max Min hFE Max fT MHz Min Cap pF Max CRB = 0.65 CRE = 0.65 MPSH10 − 25 − 60 − 650 BF959 − 20 100 40 − 600 MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1 − − − − 15 15 12 12 − 50 50 50
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MPSH10
BF959
MPSH17
MPS918
MPS5179
MPS3563
MMBTH10LT1
MMBTH10-4LT1
MMBT918LT1
BSV52LT1
TO226AA
226AA
msc2295
P2N2222A
MPS3904
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon •Motorola Preferred Device COLLECTOR 3 2 BASE" 1 EMITTER MAXIMUM RATINGS Symbol MPS918 MPS3563 Unit Col lector-E m itter Voltage Rating VCEO 15 12 Vdc C ollector-B ase Voltage
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MPS918*
MPS3563
MPS918
MPS3563
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MPS3563
Abstract: MPS918
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon 'Motorola Preferred Device MAXIMUM RATINGS Rating Unit Symbol MPS918 MPS3563 12 Vdc 30 Vdc v CEO 15 C ollector-Base Voltage VCBO 30 E m itter-B ase Voltage vebo 3.0 C ollector-Em itter Voltage
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MPS918*
MPS3563
MPS918
MPS3563
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MPS3563
Abstract: lt 2904
Text: MPS918* MPS3563 MAXIMUM RATINGS Rating 2 Symbol MPS918 MPS3563 Unit C o lle c to r-E m itte r V o lt a g e VCEO 15 12 Vdc C o lle c to r -B a se V o lt a g e VCBO 30 30 Vdc E m itte r-B a se V o lt a g e v EBO 3.0 2.0 Vdc C o lle c to r C u rre n t — C o n t in u o u s
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MPS918*
MPS3563
MPS918
T0-226AA)
PS918
PS3563
PS918
MPS3563
lt 2904
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MPS6511
Abstract: No abstract text available
Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO V CEO V EBO (V) (V) (V) PD (W) *c (A) Min Min Min Tc=25°( MPS3563 30 12 2 0.625 0.05 0.05 MPS3646 40 15 5 0.625 0.3 MPS3693
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MPS3563
MPS3646
MPS3693
MPS3694
MPS3704
MPS3705
MPS3706
MPS3707
MPS3708
MPS6511
MPS6511
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mps918
Abstract: MPS3563 MPS3663 MPS-3563
Text: MPS918 SILICON MPS3563 NPN SILICON ANNULAR TRANSISTORS NPN SILICON . . . designed fo r V H F/U H F low-level am plifier, and oscillator applications. A M PLIFIER TRANSISTORS • One-Piece, Injection-Molded Plastic Unibloc R eliability • Low C ollector-Em itter Saturation Voltage VcE(sat) = 0-4 Vdc (Maxi @ I q = 10 mAdc
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MPS918
MPS3563
MPS918
MPS3663
PS918
MPS3563
f-140
MPS-3563
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MPS3709
Abstract: MPS3563 MPS3646 MPS3693 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3710
Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBO (V) Min V CEO V ESO (V) Min (V) Min Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) PD *c (W) (A) @Tc=25°c 'cBO ^CB (mA) 0 (V ) Max MPS3563 30 12 2 0.625 0.05 0.05 MPS3646
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MPS3563
MPS3646
MPS3693
NIPS3694
MPS6507
MPS651
MPS6511
MPS6512
MPS6513
MPS6514
MPS3709
MPS3704
MPS3705
MPS3706
MPS3707
MPS3708
MPS3710
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Untitled
Abstract: No abstract text available
Text: MOT OROL A SC MPS3563 XSTRS/R F 1EE 0 | b3b?ZS4 □ Oflfe.Gfc.'i 0 | For Specifications, See MPS918 Data M A X IM U M RATINGS Symbol Value Collector-Emitter Voltage vCEO 30 Vdc Collector-Base Voltage v CBO 40 Vdc Emitter-Base Voltage Rating Unit v EBO 5.0
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MPS3563
MPS918
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MPS3563
Abstract: No abstract text available
Text: MPS918* MPS3563 M AXIM U M RATINGS Symbol Rating M PS918 M PS3563 Unit Collector-Em itter V oltage v CEO 15 12 V dc C ollector-Base V oltage v CBO 30 30 V dc Em itter-Base V oltage v EBO 3.0 2.0 Vdc Collector Current — C o n tin u o u s 'c 50 m Adc Total Device D issip a tio n a Ty\ = 25<’C
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MPS918*
MPS3563
PS918
PS3563
O-226AA)
MPS918
PS918
MPS3563
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2N5222
Abstract: 2n3544 2n918 die 2N918 motorola SILICON SMALL-SIGNAL DICE MPSH10 die 2n917 die MPS-65-48 MPS-6539 2N917
Text: 34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC DF|t.Bb7aS5 ODBTTTS 3 DIODES/OPTO 3^C 37972 D •r-~3/w<r SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C918 DIE NO. — NPN LINE SOURCE — DSL75 & This die provides performance similar to that of the following device types:
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DSL75
2N917
2N918
2N3544*
2N5222
MM1941
MMCM918
MMT918
MPS918
MPS3563
2n3544
2n918 die
2N918 motorola
SILICON SMALL-SIGNAL DICE
MPSH10 die
2n917 die
MPS-65-48
MPS-6539
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SE3001
Abstract: SE-3001 to106 SE5006 2n3564 2N5770 2N3563 2N5130 TO-106 SE3002
Text: TRANSISTORS—SMALL SIGNAL NPN RF—IF AMPLIFIER AND OSCILLATOR TRAN SISTO RS BY A SCEN D IN G FREQUENCY PLASTIC PACKAGE 10.0 25.0 25.0 28.0 28.0 29.0 29.0 30.0 20.0 20.0 @ @ @ @ @ @ @ @ @ @ 14.0 14.0 15.0 15.0 17.0 19.0 20.0 12.0 12.0 15.0 (30.0) (30.0)
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2N5127
PE3100
SE1010
2N3564
PE5025
PE5013
PE5029
PE5030B
2N3688
2N3689
SE3001
SE-3001
to106
SE5006
2N5770
2N3563
2N5130
TO-106
SE3002
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n3904
Abstract: CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640
Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued RF Transistors The RF transistors are designed for Small Signal am plification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges. Several types are AGC characterised. The transistors are listed in
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mpsh17
mpsh10
bf374
bf375
bf959
mps918
n3904
2n3903
2n4400
mps2369
CEB npn
BF509
pnp BF959
BF240 CEB
BF255
BF371 MOTOROLA
MPSH81
BF241 CEB
MPS3640
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MPS6507
Abstract: MPS6511 2N5770 MPS3563 MPS6539 MPS6547 MPS918 PN5130 T092 T092-1
Text: 5048836 K S L M IC R Q D EV îC gS INC _ K S L MICRODEVICES INC 14 14CT 00103 CASE STY LE a v CBO b v CEO BVebo *CB0 Min Min Min Max e T DËT| SDMflñBL t. RF-IF AMPLIFIERS AND O SCILLATO RS TYPE D NPN TRANSISTORS V CB *C hFE Min-Max V CE & v CE<sat Max V BE sat)
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MPS918
MPS3563
8mA/10V
PN5130
8mA/10V
2N5770
/400il
MPS6507
2mA/10V
700MHz
MPS6511
MPS6539
MPS6547
T092
T092-1
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Untitled
Abstract: No abstract text available
Text: AL L E G R O M I C R O S Y S T E M S INC 8514019 SPRAGUE. T3 D • 0SGM33Ô OGOBS^Ü S E M I C O N D S / ICS 4 ■ ALGR 93D 0359.0 D r-a7-ft? _' PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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0SGM33Ô
MPS2712
MPS2714
MPS2716
MPS2923
MPS2924
MPS2925
MPS2926
MPS3390
MPS3391
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transistor 2N3563
Abstract: 2N3563 2N3564 2n3600 2N915 KM9018 MPS3563 MPS3693 MPS3694 MPS3826
Text: RF-IF High Frequency Transistors MAXIMUM RATINGS HFE VCE sat n IC (mA) VCE (V) max (V) IC (mA) min (MHz) Cob Cre* max (PF) 198 # 200 160 400 1 3 8 10 10 5 1 10 10 10 0.5 0.4 10 10 - - . . - 400 600 600 200 200 1.7 1.7 1.7 3.5 3.5 40 100 25 25 20 160 400 -
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KM9018
O-92A
MPS918
MPS3563
MPS3693
MPS3694
transistor 2N3563
2N3563
2N3564
2n3600
2N915
MPS3826
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