Contextual Info: MP3617 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)80 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)125# I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

ASZ16

Abstract: asz1015 AL103 AD143 2N3611 PNP Germanium ASZ17 2SB407 2SB40 MP2062 ASZ15
Contextual Info: POWER GERMANIUM TRANSISTORS Item Number >C Part Number Manufacturer Type Max V BR CEO (A) Of) PD Max hre *T ON) Min (HZ) Max km Max (A) (8) ICBO r (CE)Mt Max (Ohms) T Oper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 ASZ1015 AUY30 AUY28 AUY28

2N4588

Abstract: dtg110 2S8337 ASZ1015 ASZ1018 2N4568 PTC120A 2S8407 AL113 MP3618
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 30 2S8465 2N1906 AUY28 AUY28 AUY28 2Nl1378 2Nl136A 2Nl1368 ~~~~~~ 35 40 AL103 AL103 AL103 AL102 AL102 AL102 2N5887 2N456A ~r-:,~~~~ 45 50 2N5888 2N5889 2N4568 2N457A MP3611 2N3611 2S8338 2S8337 ~~~~~~

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,