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    MOTOROLA TRANSISTORS Search Results

    MOTOROLA TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MI1600

    Abstract: 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl
    Text: . MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMDF4P03HDID DATA Advance Information MMDF4P03HD Medium Power Surface Mount Products Motorola TMOS Dual P-Channel FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s


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    MMDF4P03HDID MMDF4P03HD MMDF4P03HDm MI1600 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl PDF

    D3200

    Abstract: MMDF3200 MMDF3200Z diode sy 166 TBD 135 Transistor
    Text: MOTOROLA SEMICONDUCTOR o TECHNICAL Order thie document by MMDF3200ZD DATA Product Preview WaveFETTM I Motorola Preferred Devica Medium Power Surface Mount Products I TMOS DuaI N-Channel Field Effect Transistors WaveFEPM devices are an advanced series of power MOSFETS which utilize Motorola’s


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    MMDF3200ZD WI-2447 602-2H609 MMDF3200 D3200 MMDF3200Z diode sy 166 TBD 135 Transistor PDF

    transistor MW 882

    Abstract: BC107 equivalent transistors BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBF2201NT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s


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    MMBF2201NT1 Surface218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 transistor MW 882 BC107 equivalent transistors BC237 PDF

    BC237

    Abstract: IRFD110
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBF2201NT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s


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    MMBF2201NT1 Surface218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 IRFD110 PDF

    MMBF0201N

    Abstract: MMBF0201NLT1 MMBF0201NLT3 marking N1
    Text: MOTOROLA Order this document by MMBF0201N/D SEMICONDUCTOR TECHNICAL DATA Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors MMBF0201N Motorola Preferred Device N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 1.0 OHM These miniature surface mount MOSFETs utilize Motorola’s High


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    MMBF0201N/D MMBF0201N MMBF0201N/D* MMBF0201N MMBF0201NLT1 MMBF0201NLT3 marking N1 PDF

    AN569

    Abstract: MMSF4205 MMSF4205R2 S4205 SMD310 DI 380 Transistor
    Text: MOTOROLA Order this document by MMSF4205/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products MMSF4205 TMOS Single P-Channel Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These


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    MMSF4205/D MMSF4205 AN569 MMSF4205 MMSF4205R2 S4205 SMD310 DI 380 Transistor PDF

    transistor j326

    Abstract: AN1530 TRANSISTOR D 1978 MRF898 uhf amplifier design Transistor Inside the RF Power Transistor broad-band Microwave Class-C Transistor Amplifiers Nippon capacitors
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1530/D SEMICONDUCTOR APPLICATION NOTE AN1530 Motorola Advanced Amplifier Concept Package Prepared by: Alan Wood Motorola Semiconductor Products Sector Freescale Semiconductor, Inc. ABSTRACT


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    AN1530/D AN1530 transistor j326 AN1530 TRANSISTOR D 1978 MRF898 uhf amplifier design Transistor Inside the RF Power Transistor broad-band Microwave Class-C Transistor Amplifiers Nippon capacitors PDF

    BD139

    Abstract: BU108 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY


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    2N6055 2N6056 2N6056* TIP73B TIP74 TIP74A TIP74B TIP75 BD139 BU108 BU326 BU100 PDF

    Power motorola microprocessor 32 bit

    Abstract: applications of 32bit microprocessor microprocessor industrial devices EC603e 16K-byte
    Text: MPE603EFACT/D Rev.2 Fact Sheet MOTOROLA EC603e MICROPROCESSOR The Motorola EC603e microprocessor Motorola order number MPE603e is a PowerPC™ processor optimized for embedded applications. The EC603e microprocessor offers workstation-level performance


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    MPE603EFACT/D EC603eTM EC603e MPE603e) 603eTM 604eTM, Power motorola microprocessor 32 bit applications of 32bit microprocessor microprocessor industrial devices 16K-byte PDF

    AMPLIFIER 2SD718 2sb688 schematic

    Abstract: MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 MJ1001* Medium-Power Complementary Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE DARLINGTON POWER TRANSISTORS


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    MJ1000 MJ1001* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C AMPLIFIER 2SD718 2sb688 schematic MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250 PDF

    2N6055 MOTOROLA

    Abstract: Darlington Silicon Power Transistor 10 amp npn darlington power transistors 2N6055 100 amp npn darlington power transistors 2N6056 2N6056 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR power transistors 03 transistor
    Text: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications.


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    2N6055/D 2N6055 2N6056* 2N6056 2N6055/D* 2N6055 MOTOROLA Darlington Silicon Power Transistor 10 amp npn darlington power transistors 2N6055 100 amp npn darlington power transistors 2N6056 2N6056 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR power transistors 03 transistor PDF

    AN1617

    Abstract: torque sensor datasheet
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Mounting Recommendations for Copper Tungsten Flanged Transistors Order this document by AN1617/D AN1617 Prepared by: Antoine Rabany, Product Engineer Motorola Semiconductor Products Sector


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    AN1617/D AN1617 360Birmative AN1617 torque sensor datasheet PDF

    S2P02

    Abstract: S2P02 mosfet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF2P02E Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field E ffect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface


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    MMSF2P02E S2P02 S2P02 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMSF4205/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products MMSF4205 TMOS Single P-Channel Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These


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    MMSF4205/D MMSF4205 PDF

    5105 GE

    Abstract: BD510 Motorola 506 uniwatt BD507 BD505 BD506 transistor f 506 transistor BD 135 BD506-5
    Text: "ib MOTOROLA SC iXSTRS/R F> 6367254 MOTOROLA SC dF | b3b7E54 DGflDtDl 96D CXSTRS/.R F 80601 7 '- J 3 - / 7 BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AUDIO TRANSISTORS PNP SILICON ANNULAR* 20 - 3 0 - 4 0 VO LTS 10 W ATTS TRANSISTORS


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    b3b7E54 BD505. BD507, BD509 BD506 BD508 BD510 BDS06. BD506-1, 5105 GE Motorola 506 uniwatt BD507 BD505 transistor f 506 transistor BD 135 BD506-5 PDF

    S3P02

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M SF3P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process.


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    SF3P02HD MMSF3P02HD b3b7254 S3P02 PDF

    but16

    Abstract: No abstract text available
    Text: MOTOROLA SC ÎXSTRS/R F> 6367254 MOTOROLA SC Tt XSTRS/R DF|b3b72SM 96D F> 80785 □□fl07flS D l~-3 3 -«3e? MOTOROLA BUT16 SEM ICO N D U CTO R TECHNICAL DATA 12 AMPERES SW ITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN SILICON POWER DARLINGTON TRANSISTORS


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    b3b72SM fl07flS BUT16 but16 PDF

    on 5295 transistor

    Abstract: transistor on 5295 BD529 transistors bd525 bd530
    Text: DF|b3b72S4 MOTOROLA SC ÍXSTRS/R F> 6367254 MOTOROLA. SC ÍXSTRS/R 9 6D 8 0 6 0 7 F DDflObO? S f ~ D T - 3 3 - Ó 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN SILICON AMPLIFIER TRANSISTORS 6 0 -8 0 - 100 VOLTS 10 WATTS N PN SILICON ANNULAR* AMPLIFIER TRA N SISTORS


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    b3b72S4 BD525 BD527 BD529 BD526, BD528, BD530 BD525, BD52C on 5295 transistor transistor on 5295 transistors bd525 PDF

    BD312

    Abstract: BD-311 BD311 transistor BD312 80588 BD311/312
    Text: DE |b3t,7aS4 DDfiDSa? 3 MOTOROLA SC ÍXSTRS/R F> 6 3 6 7 2 5 4 MOTOROLA SC XSTRS/R 96D F 80587 NPN MOTOROLA BD311 SEMICONDUCTOR PNP TECHNICAL DATA BD312 COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for high quality amplifiers operating up to 60 Watts


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    BD311 BD312 BD311 BD312 b3b7a54 BD-311 transistor BD312 80588 BD311/312 PDF

    BD536 equivalent

    Abstract: B0536 BD535 equivalent BDB38 80614 Motorola 8061 b0538 8D535 BD638 8053
    Text: MOTOROLA SC ÍXSTRS/R F> ^ 6367254 MOTOROLA SC XSTRS/R P E 1 ^ 3 1 . 7 551* QQflQ b l l 96D F 8061 1 D 7 z J3 - J!- 3 2 > - c 2 / MOTOROLA SEM ICONDUCTOR TECHNICAL DATA NPN PNP BD533 BD535 BD537 BD534 BD536 BD538 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS


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    BD533, BD534 BD535, B0536 BD537, BD538 O-220 BD536 equivalent B0536 BD535 equivalent BDB38 80614 Motorola 8061 b0538 8D535 BD638 8053 PDF

    te 2443 MOTOROLA transistor

    Abstract: 2N6233 2443 MOTOROLA transistor 8044J 2N6235
    Text: MOTOROLA SC 6367254 ÎXSTRS/R MOTOROLA “ï t F> SC XSTRS/R F DÌTJt,3t.7ES4 96D 80440 □OÖD44Ü D . T - ii- t l MOTOROLA 2N6233 2N6235 SEMICONDUCTOR TECHNICAL DATA 5 AMPERE HIGH VOLTAGE NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . useful for high-voltage medium power applications such


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    2N6233 2N6235 N6233 2N6235 te 2443 MOTOROLA transistor 2443 MOTOROLA transistor 8044J PDF

    transistor sc 308

    Abstract: mje16 E16204 motorola mj transistors 221A-06 MJE16204 MJF16204 JE-16 F16204
    Text: by MJF16204/D MOTOROLA SEMICONDUCTOR b 3 b ? 2 5 4 OCHBMbS M • B 0 T b T S ^ O | TECHNICAL DATA MOTOROLA SC X STR S/R F 4bE ]> MJF16204 MJE16204 SCANSWITCH NPN Bipolar Pow er Deflection Transistors For High and Very High Resolution M onitors Motorola preferred devicw


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    MJF16204 MJE16204 O-220 MJF16204/D 2PHX23912C-2 MJF16204/D transistor sc 308 mje16 E16204 motorola mj transistors 221A-06 JE-16 F16204 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBF0201N/D SEMICONDUCTOR TECHNICAL DATA Low rDS on Sm all-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors M M B F0 2 0 1 N Motorola Preferred Device N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET rDS(on) = 1 0 OHM These miniature surface mount MOSFETs utilize Motorola’s High


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    MMBF0201N/D OT-23 HX34343F-0 PDF

    2N5986

    Abstract: 2N5987 2N5988 2N5989 2N5991 MBD5300 sc 0645 225AB diode F4 3J 75S4
    Text: MOTOROLA SC 6367254 DE | b 3 t . 7 2 S 4 -tXSTRS/R F> MOTOROLA SC XSTRS/R F 96D Ö 0 4 0 4 OoaOMDM D - p r .3 3 - m T PNP MOTOROLA ’ 2N5986, 2N5987 2N5988 SEMICONDUCTOR TECHNICAL DATA NPN 2N5989, 2N5991 12 AMPERE HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS


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    2N5986, 2N5987 2N5988 2N5989, 2N5991 2N5989 2N5987 2N5988, 2N5986 2N5988 2N5989 2N5991 MBD5300 sc 0645 225AB diode F4 3J 75S4 PDF