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    MOTOROLA TRANSISTOR 307 Search Results

    MOTOROLA TRANSISTOR 307 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA TRANSISTOR 307 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    paste

    Abstract: AN569 MTD3N25E SMD310
    Text: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD3N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET


    Original     		PDF MTD3N25E/D MTD3N25E MTD3N25E/D* paste AN569 MTD3N25E SMD310

    AN569

    Abstract: MTP3N25E
    Text: MOTOROLA Order this document by MTP3N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP3N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 250 VOLTS


    Original     		PDF MTP3N25E/D MTP3N25E MTP3N25E/D* AN569 MTP3N25E

    motorola 415 D2PAK

    Abstract: 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL44D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network


    Original     		PDF BUL44D2 BUL44D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C motorola 415 D2PAK 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c

    1147 x motorola

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1511T1 AN215A, 1147 x motorola

    Wavetek 395

    Abstract: J280 MC13156F 143-18J12 hp3780A Wavetek 164 MPS901 toko transformer IF 455 khz colpitts oscillator vhf
    Text: MC13156 Wideband FM IF System The MC13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola’s MOSAIC 1.5 bipolar process. The MC13156 has an onboard grounded collector VCO transistor


    Original     		PDF MC13156 Wavetek 395 J280 MC13156F 143-18J12 hp3780A Wavetek 164 MPS901 toko transformer IF 455 khz colpitts oscillator vhf

    ERIE CAPACITORS TYPE K

    Abstract: No abstract text available
    Text: Wideband FM IF System The MC13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola’s MOSAIC 1.5 bipolar process. The MC13156 has an onboard grounded collector VCO transistor


    Original     		PDF MC13156 MC13156 HP3780A HP8640B MC13156DW ERIE CAPACITORS TYPE K

    Wavetek 164

    Abstract: No abstract text available
    Text: ML13156 Wideband FM IF System Legacy Device: Motorola MC13156 The ML13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. The ML13156 has an onboard grounded collector VCO transistor that may be used with a fundamental or overtone crystal in single channel operation or with a PLL in


    Original     		PDF ML13156 MC13156 ML13156 Wavetek 164

    Untitled

    Abstract: No abstract text available
    Text: ML13156 Wideband FM IF System Legacy Device: Motorola MC13156 The ML13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. The ML13156 has an onboard grounded collector VCO transistor that may be used with a fundamental or overtone crystal in single channel operation or with a PLL in


    Original     		PDF ML13156 MC13156 ML13156

    TOKO 7mc8128z

    Abstract: 455 khz if transformer MPS901 TOKO CERAMIC FILTER 455 TOKO rlc variable INDUCTANCE HP8640B 455 ceramic filter carrier detect phase shift variable inductor Wavetek 164
    Text: ML13156 Wideband FM IF System Legacy Device: Motorola MC13156 The ML13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. The ML13156 has an onboard grounded collector VCO transistor that may be used with a fundamental or overtone crystal in single channel operation or with a PLL in


    Original     		PDF ML13156 MC13156 ML13156 TOKO 7mc8128z 455 khz if transformer MPS901 TOKO CERAMIC FILTER 455 TOKO rlc variable INDUCTANCE HP8640B 455 ceramic filter carrier detect phase shift variable inductor Wavetek 164

    HP8640B

    Abstract: MMBV909L HP3780A J340 MPS901 751E MC13156 MC13156DW MC13156FB ML13156
    Text: ML13156 Wideband FM IF System Legacy Device: Motorola MC13156 The ML13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. The ML13156 has an onboard grounded collector VCO transistor that may be used with a fundamental or overtone crystal in single channel operation or with a PLL in


    Original     		PDF ML13156 MC13156 ML13156 HP8640B MMBV909L HP3780A J340 MPS901 751E MC13156 MC13156DW MC13156FB

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    OCR Scan     		PDF MUN5211T1 SC-70/SOT-323 0Cn354L| MUN5211T1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3N25E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET


    OCR Scan     		PDF MTD3N25E/D TD3N25E

    transistor k 4110

    Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
    Text: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­


    OCR Scan     		PDF i-noa36Â osit34Â 354G-01 transistor k 4110 K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13

    variable inductor

    Abstract: TOKO rlc variable INDUCTANCE 292SNS-T1373 RPM-950 c series transistor equivalent table T1373 MC13156 dw FM
    Text: MOTOROLA < 8 > Wideband FM IF System The MC13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola’s MOSAIC 1.5 bipolar process. The MC13156 has an onboard grounded collector VCO transistor


    OCR Scan     		PDF MC13156 MC13156 MC13156DW variable inductor TOKO rlc variable INDUCTANCE 292SNS-T1373 RPM-950 c series transistor equivalent table T1373 MC13156 dw FM

    Motorola 2N6083

    Abstract: sem 2106 2N6083
    Text: MOTOROLA SC XSTRS/R F 4bE D b3tj?2S4 00^4120 MOTOROLA Ô MOTb T -3 5 ~ u • SEM ICONDUCTOR i TECHNICAL DATA 2N6083 The R F Line 30 W - 175 MHz 2 RF POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . designed for 1 2.5 V o lt V H F large-signal am plifier applications


    OCR Scan     		PDF 2N6083 Motorola 2N6083 sem 2106 2N6083

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    OC70

    Abstract: C703 diode ev C703 MOC70
    Text: MOTOROLA h SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­ con NPN phototransistor in a molded plastic housing. A slot in the housing between the


    OCR Scan     		PDF MOC70 354G-01 OC70 C703 diode ev C703

    MRF232

    Abstract: H546
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF232 The RF Line 7.5 W - 9 0 M Hz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON .design ed for 12.5 Volt, mid-band large-signal amplifier appli­ cations in industrial and commercial FM equipment operating in the


    OCR Scan     		PDF MRF232 MRF232 H546

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    2n6082

    Abstract: No abstract text available
    Text: T -3 2 H I MOTOROLA SC XSTRS/R F MbE D b 3 b ?2 S 4 00*14153 2 « N O T b MOTOROLA I SEMICONDUCTOR ^ TECHNICAL DATA 2N6082 The R F L in e 25 W - 175 M H z RF POWER TRANSISTOR NPN SILICO N NPN S IL IC O N R F P O W ER T R A N S IS T O R S . . . designed for 12.5 V o lt V H F large-signal am plifier applications


    OCR Scan     		PDF 2N6082 2N6082

    2N6367

    Abstract: 2N6370 MRF420 2N5070 2N5847 MRF433 MRF432 MRF428 MRF823 2N5942
    Text: RF Transistors and Modules This selection guide contains the preferred registered and non-registered RF parts available. Motorola has selected 18 transistor/module chains from 1.5 to 600 W PEP output. A ll devices are designed, tested and optimized fo r frequency ranges from 2 to 900 MHz. These devices are designed fo r your advanced RF


    OCR Scan     		PDF 2N6370 MRF432 MRF433 2N5070 MRF401 145A07 MRF427 45A-08 2N5941 2N5942 2N6367 MRF420 2N5847 MRF428 MRF823

    Motorola 2N6083

    Abstract: 2N6083
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6083 The RF Line 30 W - 175 MHz RF POWER TRANSISTOR N P N S IL IC O N IMPN SILIC O N RF POWER T R A N SIS T O R S . . . designed for 12.5 V o lt V H F large-signal amplifier applications required in commercial and industrial equipment operating to


    OCR Scan     		PDF 2N6083 Motorola 2N6083 2N6083

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP3N25E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP3N25E TMOS E-FET ™ Pow er Field E ffect Transistor M o to r o la P r e f e r r e d D e v ic e N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES


    OCR Scan     		PDF MTP3N25E/D