MJF18008 equivalent
Abstract: MJF18008 MPF930 MTP8P10 MUR105 221D MJE18008 MJE210
Text: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 * Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES
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MJE18008/D*
MJE18008/D
MJF18008 equivalent
MJF18008
MPF930
MTP8P10
MUR105
221D
MJE18008
MJE210
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PDF
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MJE18006
Abstract: 221D MJE210 MJF18006 MPF930 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 * Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES
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MJE18006/D*
MJE18006/D
MJE18006
221D
MJE210
MJF18006
MPF930
MTP8P10
MUR105
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PDF
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MSD42WT1
Abstract: SMD310
Text: MOTOROLA Order this document by MSD42WT1/D SEMICONDUCTOR TECHNICAL DATA MSD42WT1 Preliminary Information NPN Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This NPN Silicon Planar Transistor is designed for general purpose amplifier
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MSD42WT1/D
MSD42WT1
SC-70/SOT-323
7-inch/3000
MSD42WT1
SMD310
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PDF
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MGW20N120
Abstract: transistor d 1557 305 Power Mosfet MOTOROLA
Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW20N120/D
MGW20N120
MGW20N120/D*
TransistorMGW20N120/D
MGW20N120
transistor d 1557
305 Power Mosfet MOTOROLA
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PDF
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MGY25N120
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGY25N120/D
MGY25N120
MGY25N120
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PZTA42T1
Abstract: SMD310 marking P1D pd 223 circuit
Text: MOTOROLA Order this document by PZTA42T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3
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PZTA42T1/D
PZTA42T1
PZTA42T1/D*
PZTA42T1
SMD310
marking P1D
pd 223 circuit
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PDF
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MGY40N60
Abstract: motorola 6810
Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGY40N60/D
MGY40N60
MGY40N60
motorola 6810
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PDF
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MJ 6810
Abstract: motorola 6810 J 6810 D MGY40N60 TRANSISTOR J 6810
Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGY40N60/D
MGY40N60
MGY40N60/D*
MJ 6810
motorola 6810
J 6810 D
MGY40N60
TRANSISTOR J 6810
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PDF
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motorola 039 31
Abstract: 039 E 31 motorola MGW12N120
Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW12N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW12N120/D
MGW12N120
IGBTMGW12N120/D
motorola 039 31
039 E 31 motorola
MGW12N120
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PDF
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motorola 039
Abstract: MGW20N120
Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGW20N120 Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW20N120/D
MGW20N120
O-247
O-247
IGBTMGW20N120/D
motorola 039
MGW20N120
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PDF
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BF720T1
Abstract: SMD310
Text: MOTOROLA Order this document by BF720T1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Transistor BF720T1 Motorola Preferred Device COLLECTOR 2,4 BASE 1 NPN SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value Unit Collector-Emitter Voltage
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BF720T1/D
BF720T1
BF720T1
SMD310
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MUN5111DW1T1
Abstract: MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1
Text: MOTOROLA Order this document by MUN5111DW1T1/D SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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MUN5111DW1T1/D
MUN5111DW1T1
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
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ft107
Abstract: ft107 sot-223 MMFT107T1 MMFT107T3 SMD310
Text: MOTOROLA Order this document by MMFT107T1/D SEMICONDUCTOR TECHNICAL DATA MMFT107T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for
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MMFT107T1/D
MMFT107T1
ft107
ft107 sot-223
MMFT107T1
MMFT107T3
SMD310
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MUN5211DW1
Abstract: MUN5215DW1T1 MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1
Text: MOTOROLA Order this document by MUN5211DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5211DW1T1/D
MUN5211DW1T1
MUN5211DW1T1
MUN5211DW1
MUN5215DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
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MUN5111T1
Abstract: MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1
Text: MOTOROLA Order this document by MUN5111T1/D SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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MUN5111T1/D
MUN5111T1
70/SOT
MUN5111T1/D*
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
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A8J Main Board
Abstract: SOT-23 A8A
Text: MOTOROLA Order this document by MMUN2211LT1/D SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2211LT1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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MMUN2211LT1/D
OT-23
MMUN2211LT1/D*
A8J Main Board
SOT-23 A8A
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MUN5313DW1T1
Abstract: MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5311DW1T1 MUN5312DW1T1 k1112
Text: MOTOROLA Order this document by MUN5311DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5311DW1T1/D
MUN5311DW1T1
MUN5311DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5312DW1T1
k1112
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PDF
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MARKING P2F
Abstract: PZT2907AT3 1N916 PZT2222AT1 PZT2907AT1 motorola P2F
Text: MOTOROLA Order this document by PZT2907AT1/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is
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PZT2907AT1/D
PZT2907AT1
OT-223
PZT2222AT1
PZT2907AT1/D*
MARKING P2F
PZT2907AT3
1N916
PZT2222AT1
PZT2907AT1
motorola P2F
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MMUN2111T1
Abstract: A6J Main Board a6j* pnp transistor A6F SURFACE MOUNT MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 A6k SURFACE MOUNT MMUN2116LT1
Text: MOTOROLA Order this document by MMUN2111LT1/D SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2111LT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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MMUN2111LT1/D
MMUN2111LT1
OT-23
MMUN2111LT1/D*
MMUN2111T1
A6J Main Board
a6j* pnp transistor
A6F SURFACE MOUNT
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
A6k SURFACE MOUNT
MMUN2116LT1
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BSP62T1/D SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Small-Signal Darlington Transistor Motorola Preferred Device This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is
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BSP62T1/D
BSP62T1
OT-223
BSP62T1
inch/1000
BSP62T3
inch/4000
BSP62T1/D*
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PDF
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BCP56
Abstract: BCP53T1 BCP53T3 ah sot223
Text: MOTOROLA Order this document by BCP53T1/D SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for
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BCP53T1/D
BCP53T1
OT-223
BCP56
BCP53T1
inch/1000
BCP53T3
BCP53T1/D*
BCP56
ah sot223
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PDF
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MSD1819A-RT1
Abstract: SMD310 sot323 transistor marking MOTOROLA
Text: MOTOROLA Order this document by MSD1819A–RT1/D SEMICONDUCTOR TECHNICAL DATA MSD1819A-RT1 NPN Silicon General Purpose Amplifier Transistor Motorola Preferred Devices This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package
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MSD1819A
MSD1819A-RT1
SC-70/SOT-323
7-inch/3000
MSD1819A-RT1
SMD310
sot323 transistor marking MOTOROLA
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2N6056 NPN Darlington Silicon Power Transistor Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON
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2N6056/D
2N6056
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1N5761
Abstract: RM10-CORE pl lamp ballast MJF18006 221D BUL45 BUL45F MJE18006 MPF930 MTP8P10
Text: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA Designer's BUL45 * BUL45F* Data Sheet NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power
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BUL45/D
BUL45
BUL45F*
BUL45F
BUL45/D*
1N5761
RM10-CORE
pl lamp ballast
MJF18006
221D
BUL45
BUL45F
MJE18006
MPF930
MTP8P10
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PDF
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