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    MOTOROLA SEMICONDUCTOR POWER TRANSISTOR Search Results

    MOTOROLA SEMICONDUCTOR POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA SEMICONDUCTOR POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    panasonic inverter manual

    Abstract: PWM AC MOTOR CONTROl 3 phase variac panasonic inverter manual THREE PHASE MHPM7A20A60A dynamic braking unit schematic diagram MC33272D variac brake panasonic inverter manual dv panasonic frequency inverter manual
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1524/D SEMICONDUCTOR APPLICATION NOTE AN1524 AC Motor Drive Using Integrated Power Stage Freescale Semiconductor, Inc. Prepared by: Ken Berringer Motorola Inc., Hybrid Power Module Operation, Phoenix, Arizona


    Original     		PDF AN1524/D AN1524 AN1524/D* panasonic inverter manual PWM AC MOTOR CONTROl 3 phase variac panasonic inverter manual THREE PHASE MHPM7A20A60A dynamic braking unit schematic diagram MC33272D variac brake panasonic inverter manual dv panasonic frequency inverter manual

    AN1955

    Abstract: dupont delrin infrared temperature measure Motorola Microwave power Transistor EMISSIVITY
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1955/D AN1955 Thermal Measurement Methodology of RF Power Amplifiers Prepared by: Mali Mahalingam and Edward Mares Motorola Semiconductor Products Sector Freescale Semiconductor, Inc.


    Original     		PDF AN1955/D AN1955 AN1955 dupont delrin infrared temperature measure Motorola Microwave power Transistor EMISSIVITY

    MI1600

    Abstract: 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl
    Text: . MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMDF4P03HDID DATA Advance Information MMDF4P03HD Medium Power Surface Mount Products Motorola TMOS Dual P-Channel FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s


    Original     		PDF MMDF4P03HDID MMDF4P03HD MMDF4P03HDm MI1600 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl

    capacitor power factor correction home use

    Abstract: motorola milestone zero crossing detector ic with 230v 115-230V DSP56803 DSP56805 DSP56F803 DSP56F805 DSP56F80X JP201
    Text: Freescale Semiconductor, Inc. MOTOROLA Order by AN1919/D Motorola Order Number Rev. 1.0, 4/01 Semiconductor Application Note Contents Design of Indirect Power Factor Correction Using DSP56F80X 1. Introduction . 1 Indirect Power Factor Correction Application


    Original     		PDF AN1919/D capacitor power factor correction home use motorola milestone zero crossing detector ic with 230v 115-230V DSP56803 DSP56805 DSP56F803 DSP56F805 DSP56F80X JP201

    P4855-1

    Abstract: Ablestik Transistor Substitution 1993 2088AB belleville washer 33702 SIL-PAD density 208ab 2088a 814a
    Text: Order this document by AN1040/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1040 MOUNTING CONSIDERATIONS FOR POWER SEMICONDUCTORS Prepared by: Bill Roehr Staff Consultant, Motorola Semiconductor Sector TABLE OF CONTENTS Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF AN1040/D AN1040 P4855-1 Ablestik Transistor Substitution 1993 2088AB belleville washer 33702 SIL-PAD density 208ab 2088a 814a

    MJF18008 equivalent

    Abstract: MJF18008 MPF930 MTP8P10 MUR105 221D MJE18008 MJE210
    Text: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES


    Original     		PDF MJE18008/D* MJE18008/D MJF18008 equivalent MJF18008 MPF930 MTP8P10 MUR105 221D MJE18008 MJE210

    AMPLIFIER 2SD718 2sb688 schematic

    Abstract: MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 MJ1001* Medium-Power Complementary Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE DARLINGTON POWER TRANSISTORS


    Original     		PDF MJ1000 MJ1001* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C AMPLIFIER 2SD718 2sb688 schematic MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250

    MJE18006

    Abstract: 221D MJE210 MJF18006 MPF930 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES


    Original     		PDF MJE18006/D* MJE18006/D MJE18006 221D MJE210 MJF18006 MPF930 MTP8P10 MUR105

    221D

    Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES


    Original     		PDF MJE18006/D* MJE18006/D 221D MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105

    221D

    Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES


    Original     		PDF MJE18008/D* MJE18008/D 221D MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105

    vce 1200 and 5 amps npn transistor to 220 pack

    Abstract: 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18004/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES


    Original     		PDF E69369 MJE18004/D* MJE18004/D vce 1200 and 5 amps npn transistor to 220 pack 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105

    TIP48 NPN

    Abstract: BU108 BU326 BU100 BD801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP47 * TIP49* TIP48 * TIP50* High Voltage NPN Silicon Power Transistors . . . designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. *Motorola Preferred Device


    Original     		PDF TIP47 TIP49* TIP48 TIP50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP48 NPN BU108 BU326 BU100 BD801

    BU108

    Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS


    Original     		PDF 2N5194, 2N5195. 2N5191 2N5192* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100

    2SC124

    Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS


    Original     		PDF 2N5191, 2N5192 2N5194 2N5195* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC124 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100

    D3200

    Abstract: MMDF3200 MMDF3200Z diode sy 166 TBD 135 Transistor
    Text: MOTOROLA SEMICONDUCTOR o TECHNICAL Order thie document by MMDF3200ZD DATA Product Preview WaveFETTM I Motorola Preferred Devica Medium Power Surface Mount Products I TMOS DuaI N-Channel Field Effect Transistors WaveFEPM devices are an advanced series of power MOSFETS which utilize Motorola’s


    Original     		PDF MMDF3200ZD WI-2447 602-2H609 MMDF3200 D3200 MMDF3200Z diode sy 166 TBD 135 Transistor

    MRF1507

    Abstract: EB209 MRF5007 N4000
    Text: MOTOROLA EB209 Order this document by EB209/D SEMICONDUCTOR ENGINEERING BULLETIN EB209 Mounting Method for RF Power Leadless Surface Mount Transistors Prepared by: Jeanne Pavio, David Dougherty, Mike McCloskey, David Runton and Alex Elliott Motorola Semiconductor Products Sector


    Original     		PDF EB209 EB209/D MRF1507 EB209 MRF5007 N4000

    221D

    Abstract: BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10
    Text: MOTOROLA Order this document by BUL147/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE BUL147* BUL147F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES 700 VOLTS


    Original     		PDF BUL147/D BUL147* BUL147F* BUL147/BUL147F BUL147/D* 221D BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10

    2SA70

    Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit


    Original     		PDF 2N6379 2N6274 2N6379* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA70 BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: 221D BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10
    Text: MOTOROLA Order this document by BUL147/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE BUL147* BUL147F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES 700 VOLTS


    Original     		PDF BUL147/D BUL147* BUL147F* BUL147/BUL147F BUL147/D* NPN 200 VOLTS 20 Amps POWER TRANSISTOR 221D BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10

    BU108

    Abstract: BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •


    Original     		PDF TIP47, TIP50 MJD47* MJD50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 BU326 BU100

    2SA1046

    Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS


    Original     		PDF 2N6387 2N6388 2N6387, 220AB 2N6388* TIP73B TIP74 TIP74A 2SA1046 BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement

    tektronix type 576 curve tracer

    Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
    Text: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con­


    OCR Scan     		PDF AN915 AN915/D AN915/D tektronix type 576 curve tracer tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915

    MOTOROLA POWER TRANSISTOR

    Abstract: working of astable multivibrator circuit bipolar transistor tester mje13008 motorola AN1033 BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS Tektronix 7603 tester SCR DL111/D AN569
    Text: by'ANI 083/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA AN1083 Basic Thermal Management of Power Semiconductors BY AL PSHAENICH MOTOROLA SEMICONDUCTOR PRODUCTS SECTOR Thermal management of power semiconductors is often overlooked by design engineers, either through oversight,


    OCR Scan     		PDF AN1083/D AN1083/D MOTOROLA POWER TRANSISTOR working of astable multivibrator circuit bipolar transistor tester mje13008 motorola AN1033 BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS Tektronix 7603 tester SCR DL111/D AN569

    S2P02

    Abstract: S2P02 mosfet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF2P02E Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field E ffect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface


    OCR Scan     		PDF MMSF2P02E S2P02 S2P02 mosfet