MOTOROLA POWER TRANSISTORS Search Results

MOTOROLA POWER TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MOTOROLA POWER TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MI1600 Abstract: 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl Text: . MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMDF4P03HDID DATA Advance Information MMDF4P03HD Medium Power Surface Mount Products Motorola TMOS Dual P-Channel FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s	Original	MMDF4P03HDID MMDF4P03HD MMDF4P03HDm MI1600 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl	PDF
D3200 Abstract: MMDF3200 MMDF3200Z diode sy 166 TBD 135 Transistor Text: MOTOROLA SEMICONDUCTOR o TECHNICAL Order thie document by MMDF3200ZD DATA Product Preview WaveFETTM I Motorola Preferred Devica Medium Power Surface Mount Products I TMOS DuaI N-Channel Field Effect Transistors WaveFEPM devices are an advanced series of power MOSFETS which utilize Motorola’s	Original	MMDF3200ZD WI-2447 602-2H609 MMDF3200 D3200 MMDF3200Z diode sy 166 TBD 135 Transistor	PDF
2SC124 Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS	Original	2N5191, 2N5192 2N5194 2N5195* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC124 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100	PDF
BU108 Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS	Original	2N5194, 2N5195. 2N5191 2N5192* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100	PDF
AN569 Abstract: MMSF4205 MMSF4205R2 S4205 SMD310 DI 380 Transistor Text: MOTOROLA Order this document by MMSF4205/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products MMSF4205 TMOS Single P-Channel Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These	Original	MMSF4205/D MMSF4205 AN569 MMSF4205 MMSF4205R2 S4205 SMD310 DI 380 Transistor	PDF
AMPLIFIER 2SD718 2sb688 schematic Abstract: MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 MJ1001* Medium-Power Complementary Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE DARLINGTON POWER TRANSISTORS	Original	MJ1000 MJ1001* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C AMPLIFIER 2SD718 2sb688 schematic MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250	PDF
2SA70 Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit	Original	2N6379 2N6274 2N6379* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA70 BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100	PDF
TIP48 NPN Abstract: BU108 BU326 BU100 BD801 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP47 * TIP49* TIP48 * TIP50* High Voltage NPN Silicon Power Transistors . . . designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. *Motorola Preferred Device	Original	TIP47 TIP49* TIP48 TIP50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP48 NPN BU108 BU326 BU100 BD801	PDF
2N5037 Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi	Original	BD808 BD810* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N5037 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251	PDF
2SA1046 Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS	Original	2N6387 2N6388 2N6387, 220AB 2N6388* TIP73B TIP74 TIP74A 2SA1046 BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement	PDF
2Sd331 npn transistor Abstract: 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD122* PNP MJD127* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS	Original	2N6040 2N6045 TIP120 TIP122 TIP125 TIP127 MJD122* MJD127* TIP73B TIP74 2Sd331 npn transistor 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326	PDF
BU108 Abstract: BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •	Original	TIP47, TIP50 MJD47* MJD50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 BU326 BU100	PDF
BU108 Abstract: BDT3 2SC1943 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching	Original	MJE8503A* MJE8503A WATT32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 BDT3 2SC1943 2SC1419 BU326 BU100	PDF
tip122 tip127 audio amp Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power	Original	MJ3281A MJ1302A MJ3281A* MJ1302A* 204AA TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100	PDF

NPN 12 V 20 Amps POWER TRANSISTOR Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR complementary npn-pnp power transistors 340G-02 mjl3281a MJL3281A-D NPN 200 VOLTS POWER TRANSISTOR MJL1302A motorola bipolar transistor complementary npn-pnp Text: MOTOROLA Order this document by MJL3281A/D SEMICONDUCTOR TECHNICAL DATA NPN Designer's MJL3281A* PNP MJL1302A*  Data Sheet Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS	Original	MJL3281A/D MJL3281A* MJL1302A* MJL3281A MJL1302A MJL3281A/D* NPN 12 V 20 Amps POWER TRANSISTOR NPN 200 VOLTS 20 Amps POWER TRANSISTOR complementary npn-pnp power transistors 340G-02 MJL3281A-D NPN 200 VOLTS POWER TRANSISTOR motorola bipolar transistor complementary npn-pnp	PDF
S2P02 Abstract: S2P02 mosfet Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF2P02E Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field E ffect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface	OCR Scan	MMSF2P02E S2P02 S2P02 mosfet	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MMSF4205/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products MMSF4205 TMOS Single P-Channel Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These	OCR Scan	MMSF4205/D MMSF4205	PDF
MJ3041 Abstract: 1118 R Transistor 16B4 MJ3040 MJ3042 MJ-3040 Text: MOTOROLA SC -CXSTRS/R FJ .6367254 MOTOROLA SC dF CXSTRS/R F 96D J t,3t,7ES4 □ DflOfl'ifl 80898 D MJ3040 MJ3041 MJ3042 MOTOROLA SEM ICONDUCTOR TECHNICAL DATA DARLING TO N 10 AMPERE POWER TRANSISTORS NPN SILICON HIG H VO LTAG E SILICON POWER DARLING TONS	OCR Scan	MJ3040 MJ3041 MJ3042 MJ3040, MJ3041 MJ3040 MJ3041, 1118 R Transistor 16B4 MJ3042 MJ-3040	PDF
S3P02 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M SF3P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process.	OCR Scan	SF3P02HD MMSF3P02HD b3b7254 S3P02	PDF
but16 Abstract: No abstract text available Text: MOTOROLA SC ÎXSTRS/R F> 6367254 MOTOROLA SC Tt XSTRS/R DF\|b3b72SM 96D F> 80785 □□fl07flS D l~-3 3 -«3e? MOTOROLA BUT16 SEM ICO N D U CTO R TECHNICAL DATA 12 AMPERES SW ITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN SILICON POWER DARLINGTON TRANSISTORS	OCR Scan	b3b72SM fl07flS BUT16 but16	PDF
transistor c 3206 Abstract: BD808 transistor BD 139 IC CD 3207 BD807 bd810 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP TVansistor *Motorola Prwtorrtd Devfc« 10 AMPERE POWER TRANSISTORS PNP SILICON 60,80 VOLTS 90 WATTS . . . designed for use ¡n high power audio amplifiers utilizing complementary or quasi	OCR Scan	BD808 BD810* BD810 BD810 ti3b72S4 transistor c 3206 transistor BD 139 IC CD 3207 BD807	PDF
MJD47 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD47* MJD50* High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.	OCR Scan	MJD47* MJD50* TIP47, TIP50 b3b7254 MJD47 MJD50	PDF
X332 Abstract: 044VH1 14J7 mje6220 D44VH7 d44vh10 d44vh 104 cev D45VH4 Text: MOTOROLA SC XSTRS/R 1EE D I F b3b725M □DflM'lbS 7 \| NPN MOTOROLA D44VH Series SEMICONDUCTOR PNP TECHNICAL DATA D45VH Series 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS These complementary silicon power transistors are designed for	OCR Scan	MJE6220/52e D44VH D45VH X332 044VH1 14J7 mje6220 D44VH7 d44vh10 104 cev D45VH4	PDF
surface mount fet 4166 Abstract: d2p02 MOSFET 4166 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMDF2P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistors DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS MiniMOS™ devices are an advanced series of power MOSFETs	OCR Scan	MMDF2P02HD DF2P02HD 0E-04 0E-03 0E-02 0E-01 surface mount fet 4166 d2p02 MOSFET 4166	PDF

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MOTOROLA POWER TRANSISTORS Search Results

MOTOROLA POWER TRANSISTORS Result Highlights (5)

MOTOROLA POWER TRANSISTORS Datasheets Context Search

MI1600

D3200

2SC124

BU108

AN569

AMPLIFIER 2SD718 2sb688 schematic

2SA70

TIP48 NPN

2N5037

2SA1046

2Sd331 npn transistor

BU108

BU108

tip122 tip127 audio amp

NPN 12 V 20 Amps POWER TRANSISTOR

S2P02

Untitled

MJ3041

S3P02

but16

transistor c 3206

MJD47

X332

surface mount fet 4166