MOTOROLA 2n2920
Abstract: 2N2920 2N2920JAN
Text: MOTOROU Order this document by 2N2920JANID SEMICONDUCTOR TECHNICAL DATA @ 2N2920JAN, JTX, JTXV, JANS Processed per MIL4-I ,111, t ,11111 411 .,.:,>$’ \.>.l , c*\~ ~!.?,:$,! a- 9500/355 ual N,PNSilicon Small+ ignal Transistors .!. 3 Unit Vdc Vdo VEBO Emitter+ase Vohge
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2N2920JANID
2N2920JAN,
S50SS.
1PHW4101
2N292W~
MOTOROLA 2n2920
2N2920
2N2920JAN
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t10812
Abstract: Jensen B 17038 70-12911-04 Jensen* B 17038 B1182 70-12911-2 an 17830 A 009-036-9-001 sangamo capacitor rotary potentiometer dual 60k
Text: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com MALLORY CONTROLS - WIREWOUND AND SWITCH PRODUCTS
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82391D
74S381
74S383
44B235823-1
SM-C-706572
31112J
3242J
B-3221-12
t10812
Jensen B 17038
70-12911-04
Jensen* B 17038
B1182
70-12911-2
an 17830 A
009-036-9-001
sangamo capacitor
rotary potentiometer dual 60k
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70-12911-04
Abstract: 70-12911-2 t10812 20k ohm potentiometer T-10812-71 70-12911-4 Westinghouse CO 8 HELICOPTER bell 76301 18K838263
Text: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com WIREWOUND AND SWITCH PRODUCTS Type R Potentiometer Reference Data
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18C82528
107D176
107D176-24
4088D64
404P513
T-10812-50
T-10812-69
T-10812-71
5SE01904-1
18C82172H01
70-12911-04
70-12911-2
t10812
20k ohm potentiometer
T-10812-71
70-12911-4
Westinghouse CO 8
HELICOPTER bell
76301
18K838263
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e104
Abstract: DL140 MC100EL04 MC10EL04
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2ĆInput AND/NAND MC10EL04 MC100EL04 The MC10EL/100EL04 is a 2-input AND/NAND gate. The device is functionally equivalent to the E104 device with higher performance capabilities. With propagation delays and output transition times
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MC10EL04
MC100EL04
MC10EL/100EL04
240ps
MC10EL04/D*
MC10EL04/D
DL140
e104
MC100EL04
MC10EL04
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t-10812-92
Abstract: 889912-8 m60rk MG15K M15RK Minn Kota MG120R westinghouse t500 T-10812-111 M15R
Text: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com WIREWOUND AND SWITCH PRODUCTS Type M Potentiometer Reference Data
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T-10812-92
T-10812-111
MG100P-SPL
50-OAC-9
QT250
QMM300P
MG50K-OAC-8
MG100PS
MM40P
t-10812-92
889912-8
m60rk
MG15K
M15RK
Minn Kota
MG120R
westinghouse t500
T-10812-111
M15R
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MCM6706CR/D SEMICONDUCTOR TECHNICAL DATA MCM6706CR Product Preview Freescale Semiconductor, Inc. 32K x 8 Bit Static Random Access Memory J PACKAGE 300 MIL SOJ CASE 857–02 The MCM6706CR is a 262,144 bit static random access memory organized
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MCM6706CR/D
MCM6706CR
MCM6706CR
MCM6706CR/D*
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D 4206 TRANSISTOR
Abstract: 7402 motorola DIODE MOTOROLA 633 motorola 549 diode Motorola 581 MA8051CT-ND 3-063 motorola 731 motorola 901 704 16 08 55 transistor motorola 236
Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or
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MRFG35010/D
MRFG35010
D 4206 TRANSISTOR
7402 motorola
DIODE MOTOROLA 633
motorola 549 diode
Motorola 581
MA8051CT-ND
3-063 motorola
731 motorola
901 704 16 08 55
transistor motorola 236
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MA8051CT-ND
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or
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MRFG35010/D
MRFG35010
MRFG35010
MA8051CT-ND
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L 3055 motorola
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or
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MRFG35010/D
MRFG35010
MRFG35010
L 3055 motorola
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DIODE 709 1334
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or
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MRFG35010/D
MRFG35010
MRFG35010
MRFG35010/D
DIODE 709 1334
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3224W-1-502E
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or
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MRFG35010/D
MRFG35010
MRFG35010
3224W-1-502E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or
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MRFG35010/D
MRFG35010
MRFG35010
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NI-360HF
Abstract: MRFG35010 MTP23P06V RO4350 DIODE Z5
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from
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MRFG35010/D
MRFG35010
NI-360HF
MRFG35010
MTP23P06V
RO4350
DIODE Z5
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MC10H131
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual D Type Master-Slave Flip-Flop MC10H131 The MC10H131 is a MECL 10H part which is a functional/pinout duplication of the standard MECL 10K family part, with 100% improvement in clock speed and propagation delay and no increase in power–supply current.
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MC10H131
MC10H131ML2
MC10H131FN
MC10H131FNR2
MC10H131L
MC10H131M
MC10H131P
MC10H131MR1
MC10H131MR2
20A-01
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714P
Abstract: CA901 DIN45004B
Text: MOTOROLA Order this document by CA901/D SEMICONDUCTOR TECHNICAL DATA The RF Line VHF/UHF CATV Amplifiers CA901 Designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers
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CA901/D
CA901
DIN45004B
714P
CA901
DIN45004B
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CTB128
Abstract: MHW8182A XMD128
Text: MOTOROLA Order this document by MHW8182A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 128-Channel 860 MHz CATV Amplifier MHW8182A • Specified for 77 and 128–Channel Performance • Broadband Power Gain @ f = 860 MHz Gp = 18.9 dB Typ 18 dB GAIN 860 MHz
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MHW8182A/D
128-Channel
MHW8182A
CTB128
MHW8182A
XMD128
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by CA901/D SEMICONDUCTOR TECHNICAL DATA VHF/UHF CATV Amplifiers CA901 Designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion–implanted arsenic emitter transistors and an all gold metal system.
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CA901/D
CA901
DIN45004B
CA901
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10H516
Abstract: No abstract text available
Text: M MOTOROLA Military 10H516 Triple Line Receiver ELECTRICALLY TESTED PER: 5962-8750201 HP0 The 10H516 is a functional/pinout duplication of the standard MECL10K family part, with 100% improvement in clock frequency and propagation delay and no increase in power-supply current.
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10H516
MECL10K
10K-Compatible
10H516
10H516/BXAJC
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10H516
Abstract: No abstract text available
Text: M MOTOROLA Military 10H516 Triple Line Receiver ELECTRICALLY TESTED PER: 5962-8750201 The 10H516 is a functional/pinout duplication of the standard MECL10K family part, with 100% improvement in clock frequency and propagation delay and no increase in power-supply current.
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10H516
MECL10K
10K-Compatible
10H516
10H516/BXAJC
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Untitled
Abstract: No abstract text available
Text: W MOTOROLA Military 10H506 Triple 4-3-3 Input NOR Gate ELECTRICALLY TESTED PER: 5962-8756401 The 10H506 is a Triple 4-3-3 input NOR gate. This MECL10H part is a function al/pinout duplication of the standard MECL 10K family part, with 100% improve ment in propagation delay, and no increase in power-supply.
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10H506
MECL10H
10K-Compatible
10H506
10H506/BXAJC
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Untitled
Abstract: No abstract text available
Text: ^ M O TO R O LA Military 10H506 Triple 4-3-3 Input NOR Gate ELECTRICALLY TESTED PER: 5962-8756401 The 10H506 is a Triple 4-3-3 input NOR gate. This MECL10H part is afunction al/pinout duplication of the standard MECL 10K family part, with 100% improve
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10H506
10H506
MECL10H
10K-Compatible
10H5O6/BXAJC
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A Order this document by MCM6706CR/D SEMICONDUCTOR TECHNICAL DATA MCM6706CR Product Preview 32K x 8 Bit Static Random Access Memory J PACKAGE 300 MIL SOJ CASE 857-02 The MCM6706CR is a 262,144 bit static random access memory organized as 32,768 words of 8 bits. Static design eliminates the need for external clocks
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MCM6706CR/D
MCM6706CR
MCM6706CR
32-lead
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OSC XTAL 32.768KHZ
Abstract: MC68HC05L9 service manual motorola v3i capacitor 5L7 LM 3171 MPS 0704 AD0-AD15 MC68HC68L9 a 2761 SCR 600-75
Text: MC68HC05L9D/H TM DragonKat 8-Bit Microcontroller MC68HC05L7 MC68HC05L9 MC68HC68L9 MC141510 TECHNICAL DATA IM MC68HG0SL7 and MC68HC0SL9 tremembers of the DcagonKat MCU family designed in Motorola Semiconductor HK Ltd. M O TO R O LA HONG KONG MC68HC05L9 MC68HC05L7
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MC68HC05L9D/H
MC68HC05L7
MC68HC05L9
MC68HC68L9
MC141510
MC68HC0SL7
OSC XTAL 32.768KHZ
service manual motorola v3i
capacitor 5L7
LM 3171
MPS 0704
AD0-AD15
a 2761
SCR 600-75
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J360
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power FSeld-Effect Transistors MRF175GU M RF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband
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MRF175GV
MRF175GU
MRF175GU
RF175GV
MRF175G
MRF175GV
J360
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