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Text: AO4607 30V Complementary MOSFET with Schottky Diode General Description Product Summary The AO4607 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is copackaged with the n-channel FET to minimize body diode
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AO4607
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Text: SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: • 80mΩ typical on-resistance Low Vf silicon carbide Schottky barrier diode included in parallel with body diode
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AN2239
Abstract: MOSFET and parallel Schottky diode schottky diode 16a 12v DIODE schottky diode schottky 16A STS12NH3LL STS20NHS3LL STS25NH3LL high power pulse generator with mosfet
Text: AN2239 APPLICATION NOTE Maximizing Synchronous Buck Converter Efficiency with Standard STripFETs with Integrated Schottky Diodes Introduction This document explains the history, improvements, and performance evaluation of low voltage Power MOSFETs with advanced “strip” technology STripFET™ . The integration of a Schottky diode with the
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AN2239
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MOSFET and parallel Schottky diode
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diode schottky 16A
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high power pulse generator with mosfet
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MOSFET and parallel Schottky diode
Abstract: FETKY NTLJF3117P NTLJF3118N NTLJF4156N FETKY MOSFET Schottky Diode
Text: AND8265/D Typical FETKY Applications Prepared by: Han Zou ON Semiconductor http://onsemi.com APPLICATION NOTE Introduction In consumer power electronics, it is not unusual to see both power MOSFETs and Schottky diodes operating side by side as main circuit elements. The reasons of placing
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MOSFET and parallel Schottky diode
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Text: Dual N-channel MOSFET with schottky diode ELM14916AA-N •General description ■Features ELM14916AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage
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Text: Dual N-channel MOSFET with schottky diode ELM14914AA-N •General description ■Features ELM14914AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage
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FDFMA2P853
Abstract: 1A86
Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET
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FDFMA2P853
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Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET
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FDFMA2P853
Abstract: No abstract text available
Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET
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FDFMA2P853
Abstract: No abstract text available
Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET
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AO4916
Abstract: mpf230 85A schottky
Text: AO4916 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4916 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and
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Text: Single N-channel MOSFET with schottky diode ELM14700AA-N •General description ■Features ELM14700AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)
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AN72
Abstract: DMN4800LSS SCHOTTKY 4A 600V dmg4496 DMG4466SS DMG4466SSS DMG4496SSS mosfet with Integrated Schottky Diodes
Text: AN72 DIOFET boosts PoL efficiency, reduces heat versus standard MOSFET Dean Wang, and Yong Ang, Applications Engineer, Diodes Inc. Introduction This application note describes the benefits of using the DMS3014SSS in the low-side MOSFET position of synchronous buck point-of-load PoL converters. The DMS3014SSS utilizes Diodes
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Text: AO4914 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4914 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and
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Text: Complementary MOSFET with schottky diode ELM14610AA-N •General description ■Features ELM14610AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Vds=-30V Id=8.5A(Vgs=10V) Id=-7.1A(Vgs=-10V)
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AO4704
Abstract: No abstract text available
Text: AO4704 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4704 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics.This device is suitable for
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AO4702
Abstract: mosfet ao4702 MOSFET and parallel Schottky diode mosfet with schottky body diode AO4702L
Text: AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4702 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky Diode is packaged in parallel to improve device performance in
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mosfet with schottky body diode
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LT 1000-T1
Abstract: marking 34 diode SCHOTTKY MOSFET TSSOP-8 Si6923DQ
Text: Si6923DQ P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the
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FDFMA2P853
Abstract: No abstract text available
Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET
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diode ja
Abstract: No abstract text available
Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET
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FDFMA2P853
Abstract: No abstract text available
Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET
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Text: Dual N-channel MOSFET with schottky diode ELM14918AA-N •General description ■Features ELM14918AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Q1 Vds=30V Id=9.3A Rds(on) < 14.5mΩ Rds(on) < 16mΩ Q2
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Text: Dual N-channel MOSFET with schottky diode ELM14912AA-N •General description ■Features ELM14912AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage
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Text: FAIRCHILD S E M IC O N D U C T O R August 1999 tm FDFS2P102 FETKEY P-Channel MOSFET with Schottky Diode General Description Features -3.3 A, -20 V. RDS 0N = 0.125 £2 @ VGS = -10 V Rdsion) = 0.200 £2 @ VGS = -4.5 V. Fairchild Semiconductor's FETKEY technology combines a
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