Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-FA40SA50LC VS-FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated
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VS-FA40SA50LC
VS-FA38SA50LCP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Not recommended for new designs, use VS-FA40SA50LC VS-FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated
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Original
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PDF
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VS-FA40SA50LC
VS-FA38SA50LCP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Not recommended for new designs, use VS-FA72SA50LC VS-FA57SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 57 A FEATURES • • • • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating
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Original
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PDF
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VS-FA72SA50LC
VS-FA57SA50LCP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-FA72SA50LC VS-FA57SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 57 A FEATURES • • • • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating
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Original
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PDF
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VS-FA72SA50LC
VS-FA57SA50LCP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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VS-40MT060WFHT
Abstract: 01100-T
Text: VS-40MT060WFHT www.vishay.com Vishay Semiconductors Full Bridge IGBT and MOSFET MTP Power Module FEATURES • Generation 4 warp speed IGBT and power MOSFET technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses
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PDF
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VS-40MT060WFHT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-40MT060WFHT
01100-T
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Untitled
Abstract: No abstract text available
Text: VS-FC80NA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module High Side Chopper - Power MOSFET, 100 A FEATURES 3 D MOSFET • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness 2 (G) 1 (S, K)
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VS-FC80NA20
OT-227
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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1N270 diode equivalent
Abstract: BYV10-30 digital triggering scr diodo Zener 4.1v SCR TRIGGER PULSE TRANSFORMER SCR gate drive circuit AN763 TC913 germanium transistor pnp 1N270
Text: M AN763 Latch-Up Protection For MOSFET Drivers Author: Microchip Technology Inc. Source P+ VS+ INTRODUCTION Most CMOS ICs, given proper conditions, can “latch” like an SCR , creating a short circuit from the positive supply voltage to ground. This application note
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AN763
D-85737
DS00763B-page
1N270 diode equivalent
BYV10-30
digital triggering scr
diodo Zener 4.1v
SCR TRIGGER PULSE TRANSFORMER
SCR gate drive circuit
AN763
TC913
germanium transistor pnp
1N270
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Untitled
Abstract: No abstract text available
Text: VS-FC220SA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 220 A FEATURES • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche SOA
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VS-FC220SA20
OT-227
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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73847
Abstract: delta vfd AN829 diode torque values AN828 SiE802DF
Text: AN829 Vishay Siliconix PolarPAK Thermal Impedance Rth vs. Heat Sink Assembly Clamping Torque By Kandarp Pandya 1" (25.4 mm) INTRODUCTION PolarPAK®, the innovative power MOSFET package from Vishay Siliconix, provides enhanced thermal performance, especially when used with a heat sink and
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AN829
AN828
73847
delta vfd
AN829
diode torque values
AN828
SiE802DF
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Untitled
Abstract: No abstract text available
Text: VS-FB190SA10 www.vishay.com Vishay Semiconductors Power MOSFET, 190 A FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance • Low internal inductance • Optimized for SMPS applications
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VS-FB190SA10
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance
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Original
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PDF
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VS-FA40SA50LC
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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60aph
Abstract: VS-FA72SA50LC
Text: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES SOT-227 PRODUCT SUMMARY • • • • • • • Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements
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PDF
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VS-FA72SA50LC
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
60aph
VS-FA72SA50LC
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Untitled
Abstract: No abstract text available
Text: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance
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Original
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PDF
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VS-FA40SA50LC
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VS-FB190SA10 www.vishay.com Vishay Semiconductors Power MOSFET, 190 A FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance • Low internal inductance • Optimized for SMPS applications
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Original
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PDF
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VS-FB190SA10
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
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VS-FB190SA10
Abstract: 125DC
Text: VS-FB190SA10 Vishay Semiconductors Power MOSFET, 190 A FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance • Low internal inductance SOT-227 • Optimized for SMPS applications
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VS-FB190SA10
OT-227
2002/95/EC
OT-227
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VS-FB190SA10
125DC
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Untitled
Abstract: No abstract text available
Text: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device
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Original
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PDF
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VS-FA72SA50LC
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device
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Original
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PDF
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VS-FA72SA50LC
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
VS-FB190SA10
Abstract: No abstract text available
Text: VS-FB190SA10 Vishay Semiconductors Power MOSFET, 190 A FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance • Low internal inductance SOT-227 • Optimized for SMPS applications
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Original
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PDF
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VS-FB190SA10
OT-227
2002/95/EC
OT-227
11-Mar-11
VS-FB190SA10
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Untitled
Abstract: No abstract text available
Text: VS-FB190SA10 Vishay Semiconductors Power MOSFET, 190 A FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance • Low internal inductance SOT-227 • Optimized for SMPS applications
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Original
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PDF
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VS-FB190SA10
OT-227
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-FB190SA10 FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements
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VS-FB190SA10
FB180SA10P
OT-227
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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MBR0520T1
Abstract: SIP 9 JP1 CRCW08051001FRT1 VJ0805104KXXAT pwm schematic buck converter PWM 2525 CRCW08052002FRT1 CRCW08052202FRT1 CRCW08053901FRT1 Si9165
Text: Si9165DB Vishay Siliconix Si9165 Demonstration Board FEATURES D D D D D D D D D D D D D D Voltage Mode Control Fully Integrated MOSFET Switches 600-mA Load Capability 2.7- to 6-V Input Voltage Range for VDD and VS Programmable PWM/PSM Control Up to 2-MHz Switching Frequency in PWM
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Si9165DB
Si9165
600-mA
200-mA
GRM42-2X5R106K16
VJ0805271KXXAT
VJ0805122KXXXAT
MBR0520T1
OD-123
MBR0520T1
SIP 9 JP1
CRCW08051001FRT1
VJ0805104KXXAT
pwm schematic buck converter
PWM 2525
CRCW08052002FRT1
CRCW08052202FRT1
CRCW08053901FRT1
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MBR0520T1
Abstract: SIP 9 JP1 CRCW08051001FRT1 CRCW08052002FRT1 CRCW08052202FRT1 Si9165 Si9169 Si9169DB TSSOP-20 capacitor 1000 MF
Text: Si9169DB Vishay Siliconix Si9169 Demonstration Board FEATURES D D D D D D D D D D D D D D Voltage Mode Control Fully Integrated MOSFET Switches 1-A Load Capability 2.7- to 6-V Input Voltage Range for VDD and VS Programmable PWM/PSM Control Up to 2-MHz Switching Frequency in PWM
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Si9169DB
Si9169
200-mA
Si9165,
Si9165.
GRM42-2X5R106K16
VJ0805271KXXAT
VJ0805123KXXXAT
MBR0520T1
SIP 9 JP1
CRCW08051001FRT1
CRCW08052002FRT1
CRCW08052202FRT1
Si9165
TSSOP-20
capacitor 1000 MF
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SCR TRIGGER PULSE TRANSFORMER
Abstract: 1N270 diode equivalent 1N270 equivalent LTC4266 SCR 214 TC426 equivalent SCR PULSE TRANSFORMER diode germanium 1n270 SCR IC CHIP scr driver ic
Text: APPLICATION NOTE 31 LATCH-UP PROTECTION OF CMOS ICs LATCH-UP PROTECTION OF CMOS ICs By RonAN-31 Vinsant INTRODUCTION In most applications, the triggering of the parasitic SCR results in the destruction of the IC. The only time destruction does not occur is when the supply current to the device is
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AN-31
SCR TRIGGER PULSE TRANSFORMER
1N270 diode equivalent
1N270 equivalent
LTC4266
SCR 214
TC426 equivalent
SCR PULSE TRANSFORMER
diode germanium 1n270
SCR IC CHIP
scr driver ic
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transistors 1UW
Abstract: transistors 1UW 18 p06e
Text: RFF60P06 21 H A R R 'S 25A+, 60V, Hermetically Packaged, Avalanche Rated P-Channel Enhancement-Mode Power MOSFET Decem ber 1995 Features Package • 2 5 A t, 60V • TO-254AA r D S O N = 0 - 0 3 0 i 2 G A TE • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve
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OCR Scan
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PDF
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RFF60P06
O-254AA
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
transistors 1UW
transistors 1UW 18
p06e
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