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    MOSFET VN10 Search Results

    MOSFET VN10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET VN10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    TP2350B

    Abstract: mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TP2150B DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER Technical Information Revision 1.7 – June 2004 GENERAL DESCRIPTION The TP2150B is a high speed, dual high side and low side MOSFET driver. The TP2150B level shifts CMOS


    Original     		PDF TP2150B TP2150B TP2350B mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY

    DMG1012

    Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
    Text: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS


    Original     		PDF A1103-04, DMG1012 ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE MOSFET VN10KCSM4 • Low RDS on , VGS(th), CISS And Fast Switching Speeds • Hermetic Surface Mount LCC3 package. • Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc.) Applications • Screening Options Available


    Original     		PDF VN10KCSM4 300mW 150NT MO-041BA)

    VN10K mosfet

    Abstract: LE17 VN10K
    Text: N-CHANNEL ENHANCEMENT MODE MOSFET VN10K • Low RDS on , VGS(th), CISS And Fast Switching Speeds • Hermetic TO-18 Metal package. • Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc.) Applications • Screening Options Available


    Original     		PDF VN10K O-206AA) VN10K mosfet LE17 VN10K

    "TO-52 package"

    Abstract: LE17 VN10KE
    Text: N-CHANNEL ENHANCEMENT MODE MOSFET VN10KE • Low RDS on , VGS(th), CISS And Fast Switching Speeds • Hermetic TO-52 Metal package. • Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc.) Applications • Screening Options Available


    Original     		PDF VN10KE O-206AC) "TO-52 package" LE17 VN10KE

    VN10K-TO18

    Abstract: No abstract text available
    Text: VN10K-TO18 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOSFET 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) D 12.7 (0.500) min. 0.48 (0.019) 0.41 (0.016) dia. G S 2.54 (0.100) Nom. 3 1 2 TO18 PACKAGE


    Original     		PDF VN10K-TO18 300ms VN10K-TO18

    VN10LE

    Abstract: No abstract text available
    Text: VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LLS 5 @ VGS = 10 V 0.8 to 2.5


    Original     		PDF VN10LE/LLS, VN0605T, VN0610LL, VN2222LL VN10LE VN10LLS VN0605T VN0610LL VN2222LL O-206AC

    VN0605T

    Abstract: VN0610LL VN10LLS VN2222LL
    Text: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0


    Original     		PDF VN10LLS, VN0605T, VN0610LL, VN2222LL VN10LLS VN0605T VN0610LL O-226AA) S-00528--Rev. VN0605T VN0610LL VN10LLS VN2222LL

    VN10KM MOSFET

    Abstract: siliconix VN10KM VN10KM VN10KM equivalent MOSFET vn2222l VN10K VN10KE VN0610L VN10KT VN2222L
    Text: VN0610L, VN10KE/M/T, VN2222L N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 VN10KM


    Original     		PDF VN0610L, VN10KE/M/T, VN2222L VN0610L VN10KE VN10KM VN10KT O-226AA) S-52426--Rev. VN10KM MOSFET siliconix VN10KM VN10KM VN10KM equivalent MOSFET vn2222l VN10K VN10KE VN0610L VN10KT VN2222L

    Untitled

    Abstract: No abstract text available
    Text: VN10LP Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)270m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)625m Minimum Operating Temp (øC)


    Original     		PDF VN10LP

    Untitled

    Abstract: No abstract text available
    Text: VN10LF Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)150m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC)


    Original     		PDF VN10LF

    VN10KM MOSFET

    Abstract: VN2222L VN10KM equivalent VN10KE VN10K VN10KM MOSFET vn2222l siliconix VN10KM VN0610L VN10KT
    Text: VN0610L, VN10KE/M/T, VN2222L N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 VN10KM


    Original     		PDF VN0610L, VN10KE/M/T, VN2222L VN0610L VN10KE VN10KM VN10KT O-226AA) S-52426--Rev. VN10KM MOSFET VN2222L VN10KM equivalent VN10KE VN10K VN10KM MOSFET vn2222l siliconix VN10KM VN0610L VN10KT

    mosfet vn10

    Abstract: vn10 VN2222LM mosfet vn10lm
    Text: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V


    Original     		PDF VN10/0605/0610/2222 VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM mosfet vn10 vn10 mosfet vn10lm

    MOSFET vn2222l

    Abstract: VN10KLS
    Text: VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 5 @ VGS = 10 V


    Original     		PDF VN0610L, VN10KE/KLS, VN2222L VN0610L VN10KE VN10KLS VN2222L O-226AA) S-58620--Rev. 21-Jun-99 MOSFET vn2222l

    Untitled

    Abstract: No abstract text available
    Text: VN10KM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)310m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)


    Original     		PDF VN10KM

    Untitled

    Abstract: No abstract text available
    Text: VN10LM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)


    Original     		PDF VN10LM

    mosfet vn10

    Abstract: VN10 VN10KM MOSFET Drivers 40V
    Text: VN10 KM n-Channel Enhancement-mode Vertical Power MOSFET OTMWIL FEATURES • Directly drives Inductive loads APPLICATIONS • LED and lamp drivers • High speed, high peak current switching • TTL and CMOS to high current interface • Inherent current sharing capability when paralleled


    OCR Scan     		PDF Pulsatesi-80 mosfet vn10 VN10 VN10KM MOSFET Drivers 40V

    0610L

    Abstract: 2222l 10kls VN10KLS
    Text: _ VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (Q ) V GS(th) (V ) Id (A) 5 @ V GS = 1 0 V 0.8 to 2.5 0.27 VN 0610L 5 @ V GS = 1 0 V


    OCR Scan     		PDF VN0610L, VN10KE/KLS, VN2222L 0610L 10KLS 2222L VN2222L_ O-226AA) VN10KLS

    Untitled

    Abstract: No abstract text available
    Text: un itti llll SEME VN10KCSM4 LAB N-CHANNEL ENHANCEMENT MODE MOSFET MECHANICAL DATA Dimensions in mm inches 1.02±0.20 (0.04 ± 0.006) 2.03 ± 0.20 (0.08 ± 0.008) LCC3 - CERAMIC SURFACE MOUNT PACKAGE PIN 1 - Drain Underside View PIN 2 - N/C PIN 3 - Gate ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF VN10KCSM4 300ns

    Untitled

    Abstract: No abstract text available
    Text: mi SEME VN10KCSM4 LAB N-CHANNEL ENHANCEMENT MODE MOSFET MECHANICAL DATA Dimensions in mm inches 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.0 8 1 0.008) LCC3 - CERAMIC SURFACE MOUNT PACKAGE Underside View PIN 1 - Drain PIN 2 - N/C PIN 3 - Gate ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF VN10KCSM4

    VN10KLS

    Abstract: VN0610L VN10KE VN2222L
    Text: _ VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (Q ) V GS(th) (V ) I d (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN0610L 5 @ VGs = 10 V 0.8 to 2.5


    OCR Scan     		PDF VN0610L, VN10KE/KLS, VN2222L VN0610L VN10KE VN10KLS O-226AA) S-58620â -Jun-99 VN10KLS VN10KE VN2222L

    2222ll

    Abstract: 10LLS ST C 236 DIODE 0605T
    Text: — _ VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (Q ) V GS(th) (V) lD Min (A) VN1 OLE 5 @ V GS = 10 V 0.8 to 2.5 0.38 VN 10LLS 5 @ V GS = 10 V 0.8 to 2.5


    OCR Scan     		PDF VN10LE/LLS, VN0605T, VN0610LL, VN2222LL 10LLS 0605T 0610LL 2222LL S-58620-- 21-Jun-99 ST C 236 DIODE

    zener diode marking CODE VN S2

    Abstract: VN10KM MOSFET siliconix VN10KM VN0610L VN10KE VN10KM VN10KT VN2222L YS 150 017
    Text: M IC VN0610L, VNIOKE/M/T, YN2222L Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary rDS<on Max {Q) V GS<th) V) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 P art Number V(BR)DSS Min (V)


    OCR Scan     		PDF vn0610l, vn10ke/m/t, vn2222l VN0610L VN10KE VN10KM VN10KT O-226AA) S-52426â zener diode marking CODE VN S2 VN10KM MOSFET siliconix VN10KM VN0610L VN10KE VN10KT VN2222L YS 150 017