300 watt mosfet amplifier
Abstract: ASI10707 VFT300-28 ms1250
Text: VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG D A FEATURES: B .080x45° • PG = 14 dB Typical at 175 MHz
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VFT300-28
VFT300-28
080x45°
300 watt mosfet amplifier
ASI10707
ms1250
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.
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RD07MVS1B
175MHz
520MHz
RD07MVS1
RD07MVS1B
520MHz
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GP4060
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.
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RD07MVS1B
175MHz
520MHz
RD07MVS1B
RD07MVS1
175MHz)
520MHz)
Oct2011
GP4060
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BLF278
Abstract: blf278 rf amplifier power amplifier blf278 BLF278 mosfet VHF amplifier 217-797 blf278 rf power BLF278 VHF Power MOSFET 97233 99093 BLF278 spice
Text: BLF278 VHF POWER MOSFET DESCRIPTION: The ASI BLF278 is a Dual Common Source N-Channel EnhancementMode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS ID 40 A VDSS
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BLF278
BLF278
blf278 rf amplifier
power amplifier blf278
BLF278 mosfet VHF amplifier
217-797
blf278 rf power
BLF278 VHF Power MOSFET
97233
99093
BLF278 spice
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BLF246
Abstract: POWER MOSFET -N-CHANNEL
Text: BLF246 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF246 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. PACKAGE STYLE .380 4L FLG FEATURES INCLUDE: • PG = 13 dB Typical at 175 MHz
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BLF246
BLF246
POWER MOSFET -N-CHANNEL
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VFT300-28
Abstract: ASI10707
Text: VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG D A FULL R B .080x45° FEATURES: (4X).060 R • PG = 14 dB Typical at 175 MHz
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VFT300-28
VFT300-28
080x45°
ASI10707
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mosfet 1412
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 6.0+/-0.15 0.2+/-0.05 specifically designed for VHF/UHF RF power RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.
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RD02MUS1B
175MHz
520MHz
RD02MUS1B
RD02MUS1
175MHz,
175MHz)
520MHz)
mosfet 1412
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ASI10701
Abstract: VFT5-28SL
Text: VFT5-28SL VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT5-28SL is Designed for Class A and AB VHF Power Amplifiers operating at frequencies up to 250 MHz. PACKAGE STYLE .280 4L PILL FEATURES: A • PG = 21 dB Typical at 175 MHz • η D = 50% Typical at POUT = 5 Watts
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VFT5-28SL
VFT5-28SL
ASI10701
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AM/FM
Abstract: ASI10709 VFT150-50
Text: VFT150-50 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT150-50 is a N-Channel Enhancement Mode RF Power MOSFET Designed for AM/FM Power Amplifier Applications up to 175 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FULL R FEATURES: S D Ø.125 NOM.
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VFT150-50
VFT150-50
112x45°
AM/FM
ASI10709
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VFT5-28SL
Abstract: ASI10701
Text: VFT5-28SL VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT5-28SL is Designed for Class A and AB VHF Power Amplifiers operating at frequencies up to 250 MHz. PACKAGE STYLE .280 4L PILL FEATURES: A • PG = 21 dB Typical at 175 MHz • η D = 50% Typical at POUT = 5 Watts
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VFT5-28SL
VFT5-28SL
ASI10701
ASI10701
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ASI10701
Abstract: VFT5-28 mosfet vhf power amplifier
Text: VFT5-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI VFT5-28 is a N-Channel Enhancement-Mode RF Power MOSFET Designed for AM and FM Power Amplifier Applications up to 250 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A S FEATURES INCLUDE:
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VFT5-28
VFT5-28
ASI10701
mosfet vhf power amplifier
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A 1469 mosfet
Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD30HVF1
175MHz
RD30HVF1
175MHz
A 1469 mosfet
Pch MOS FET
S 170 MOSFET TRANSISTOR
100OHM
mosfet 800 v
MITSUBISHI RF POWER MOS FET
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RD02MUS1
Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD02MUS1
175MHz
520MHz
RD02MUS1
175MHz,
520MHz
175MHz)
520MHz)
T112
UHF transistor FET
RD02MUS1-101
3M Touch Systems
transistor J17
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RD30HVF1
Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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175MHz
RD30HVF1
175MHz
RD30HVF1-101
RD30HVF1-101
rf power transistor rd30hvf1
100OHM
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A 1469 mosfet
Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD30HVF1
175MHz
RD30HVF1
175MHz
A 1469 mosfet
transistor 38W
1599 transistor
100OHM
MITSUBISHI RF POWER MOS FET
TRANSISTOR D 1785
transistor D 1666
transistor 38W 3 pin
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3M Touch Systems
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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175MHz
520MHz
RD02MUS1
175MHz,
175MHz)
520MHz)
3M Touch Systems
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TRANSISTOR mosfet 9V
Abstract: RD06HHF1 RD06HVF1 high power FET Transistor transistor 6w MOSFET RF POWER TRANSISTOR VHF
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS TENTATIVE Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DRAWING 12.3MIN APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets.
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RD06HVF1
175MHz
175MHz
RD06HVF1
RD06HHF1
TRANSISTOR mosfet 9V
RD06HHF1
high power FET Transistor
transistor 6w
MOSFET RF POWER TRANSISTOR VHF
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212J
Abstract: rd30hvf
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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175MHz
RD30HVF1-101
212J
rd30hvf
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DIODE GP 704
Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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175MHz,
RD12MVP1
175MHz
175MHz)
DIODE GP 704
transistor mosfet 536
VGS-75
0452 mosfet
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BLF248
Abstract: all mosfet vhf power amplifier mosfet vhf power amplifier
Text: BLF248 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF248 is a Balanced N-Channel Enhancement-Mode RF Power MOSFET Designed for AM and FM Power Amplifier Applications up to 250 MHz. FEATURES INCLUDE: PACKAGE STYLE .400 BAL FLG D • PG = 11 dB Typical at 225 MHz
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BLF248
BLF248
ASI10495
all mosfet vhf power amplifier
mosfet vhf power amplifier
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3
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175MHz
RD30HVF1
175MHz
RD30HVF1-101
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RD15HVF1
Abstract: RD15HVF1-101 100OHM RF Transistor s-parameter vhf transistor D 1557
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica
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RD15HVF1
175MHz520MHz
RD15HVF1
175MHz
520MHz
RD15HVF1-101
100OHM
RF Transistor s-parameter vhf
transistor D 1557
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RD02MUS1
Abstract: RD02MUS1-101 T112 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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175MHz
520MHz
RD02MUS1
RD02MUS1-101
T112
3M Touch Systems
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RD70HVF1-101
Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.
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RD70HVF1
175MHz70W
520MHz
RD70HVF1
175MHz
Oct2011
RD70HVF1-101
RD70HVF
70w power amplifier rd70hvf1
60W VHF circuit RF amplifier
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