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    MOSFET TRANSISTOR 800 VOLTS.500 AMPERES Search Results

    MOSFET TRANSISTOR 800 VOLTS.500 AMPERES Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R3E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TRANSISTOR 800 VOLTS.500 AMPERES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTW7N80E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTW7N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW7N80E Motorola Preferred Device TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS on = 1.0 OHM


    Original     		PDF MTW7N80E/D O-247 MTW7N80E MTW7N80E/D* MTW7N80E

    AN569

    Abstract: MTP4N80E MTP4N80
    Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP4N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS


    Original     		PDF MTP4N80E/D MTP4N80E MTP4N80E/D* AN569 MTP4N80E MTP4N80

    AN569

    Abstract: MTP4N80E
    Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP4N80E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS


    Original     		PDF MTP4N80E/D MTP4N80E MTP4N80E/D* AN569 MTP4N80E

    mosfet transistor 400 volts.100 amperes

    Abstract: mtp2p
    Text: MOTOROLA Order this document by MTP2P50E/D SEMICONDUCTOR TECHNICAL DATA MTP2P50E  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 6.0 OHM P–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTP2P50E/D MTP2P50E MTP2P50E/D mosfet transistor 400 volts.100 amperes mtp2p

    AN569

    Abstract: MTP2P50E
    Text: MOTOROLA Order this document by MTP2P50E/D SEMICONDUCTOR TECHNICAL DATA MTP2P50E  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 6.0 OHM P–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTP2P50E/D MTP2P50E AN569 MTP2P50E

    motorola MOSFET 935

    Abstract: pd 223 AN569 MTU18N50E MOTOROLA TRANSISTOR 935
    Text: MOTOROLA Order this document by MTU18N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTU18N50E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 18 AMPERES 500 VOLTS RDS on = 0.31 OHM This high voltage MOSFET uses an advanced termination


    Original     		PDF MTU18N50E/D MTU18N50E motorola MOSFET 935 pd 223 AN569 MTU18N50E MOTOROLA TRANSISTOR 935

    418C

    Abstract: AN569 MTB4N80E1
    Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E−FET. High Energy Power FET D2PAK−SL Straight Lead MTB4N80E1 Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate


    Original     		PDF MTB4N80E1/D MTB4N80E1 418C AN569 MTB4N80E1

    418C

    Abstract: AN569 MTB4N80E1
    Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB4N80E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTB4N80E1/D MTB4N80E1 418C AN569 MTB4N80E1

    AN569

    Abstract: MTY20N50E
    Text: MOTOROLA Order this document by MTY20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY20N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 20 AMPERES 500 VOLTS


    Original     		PDF MTY20N50E/D MTY20N50E MTY20N50E/D* AN569 MTY20N50E

    mtw14n50

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTW14N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW14N50E Motorola Preferred Device TMOS POWER FET 14 AMPERES 500 VOLTS RDS on = 0.40 OHM


    Original     		PDF MTW14N50E/D O-247 MTW14N50E MTW14N50E/D* TransistorMTW14N50E/D mtw14n50

    AN569

    Abstract: MTY16N80E
    Text: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY16N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 16 AMPERES 800 VOLTS


    Original     		PDF MTY16N80E/D MTY16N80E MTY16N80E/D* AN569 MTY16N80E

    AN569

    Abstract: MTY14N100E 340G
    Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 1000 VOLTS


    Original     		PDF MTY14N100E/D MTY14N100E MTY14N100E/D* AN569 MTY14N100E 340G

    S 170 MOSFET TRANSISTOR

    Abstract: MTW20N50E-D TO-247 Package
    Text: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW20N50E Motorola Preferred Device TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.24 OHM


    Original     		PDF MTW20N50E/D O-247 MTW20N50E MTW20N50E/D* TransistorMTW20N50E/D S 170 MOSFET TRANSISTOR MTW20N50E-D TO-247 Package

    S 170 MOSFET TRANSISTOR

    Abstract: TB-547 TO247 package
    Text: MOTOROLA Order this document by MTW6N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW6N100E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1.5 OHM


    Original     		PDF MTW6N100E/D O-247 MTW6N100E MTW6N100E/D* TransistorMTW6N100E/D S 170 MOSFET TRANSISTOR TB-547 TO247 package

    MTB8N50E

    Abstract: MTB8N50E-D
    Text: MOTOROLA Order this document by MTB8N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB8N50E TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS on = 0.8 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTB8N50E/D MTB8N50E MTB8N50E MTB8N50E-D

    AN569

    Abstract: MTY10N100E transistor 667 7A
    Text: MOTOROLA Order this document by MTY10N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY10N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 10 AMPERES 1000 VOLTS


    Original     		PDF MTY10N100E/D MTY10N100E MTY10N100E/D* AN569 MTY10N100E transistor 667 7A

    silicon carbide

    Abstract: No abstract text available
    Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A D K K K F E2 G2 U E2 C1 J G1 E1 C2E1 H Z AB EB UU H U AA Q Q P G N S - NUTS (3 TYP) T - (4 TYP) W V


    Original     		PDF QJD1210007 Amperes/1200 silicon carbide

    MTB4N80E

    Abstract: AN569 SMD310 824 mosfet
    Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTB4N80E/D MTB4N80E MTB4N80E/D* MTB4N80E AN569 SMD310 824 mosfet

    motorola an569 thermal

    Abstract: mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. High Energy Power FET D2PAK for Surface Mount MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate


    Original     		PDF MTB4N80E/D MTB4N80E/D MTB4N80E/D* motorola an569 thermal mosfet transistor 400 volts.100 amperes

    motorola 549 diode

    Abstract: diode Fr 10e AN569 MTB75N05HD
    Text: MOTOROLA Order this document by MTB75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount MTB75N05HD Motorola Preferred Device TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTB75N05HD/D MTB75N05HD motorola 549 diode diode Fr 10e AN569 MTB75N05HD

    MTP1N100E

    Abstract: AN569
    Text: MOTOROLA Order this document by MTP1N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP1N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 1000 VOLTS


    Original     		PDF MTP1N100E/D MTP1N100E MTP1N100E/D* MTP1N100E AN569

    AN569

    Abstract: IRF530
    Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high


    Original     		PDF IRF530/D IRF530 AN569 IRF530

    transistor 667 7A

    Abstract: AN569 MTW10N100E
    Text: MOTOROLA Order this document by MTW10N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW10N100E Motorola Preferred Device TMOS POWER FET 10 AMPERES 1000 VOLTS RDS on = 1.3 OHM


    Original     		PDF MTW10N100E/D O-247 MTW10N100E MTW10N100E/D* transistor 667 7A AN569 MTW10N100E

    MTD1N80E

    Abstract: AN569 SMD310
    Text: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor DPAK for Surface Mount MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM


    Original     		PDF MTD1N80E/D MTD1N80E MTD1N80E/D* MTD1N80E AN569 SMD310