Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET TRANSISTOR 400 VOLTS.10 AMPERES Search Results

    MOSFET TRANSISTOR 400 VOLTS.10 AMPERES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TRANSISTOR 400 VOLTS.10 AMPERES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: MTW24N40E TO247AE
    Text: MOTOROLA Order this document by MTW24N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW24N40E Motorola Preferred Device TMOS POWER FET 24 AMPERES 400 VOLTS RDS on = 0.16 OHM


    Original     		PDF MTW24N40E/D O-247 MTW24N40E MTW24N40E/D* TransistorMTW24N40E/D AN569 MTW24N40E TO247AE

    AN569

    Abstract: MTP2N40E
    Text: MOTOROLA Order this document by MTP2N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP2N40E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 400 VOLTS


    Original     		PDF MTP2N40E/D MTP2N40E MTP2N40E/D* TransistorMTP2N40E/D AN569 MTP2N40E

    pd 223

    Abstract: AN569 MTU20N40E motorola MOSFET 935
    Text: MOTOROLA Order this document by MTU20N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTU20N40E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 20 AMPERES 400 VOLTS RDS on = 0.19 OHM This high voltage MOSFET uses an advanced termination


    Original     		PDF MTU20N40E/D MTU20N40E pd 223 AN569 MTU20N40E motorola MOSFET 935

    AN569

    Abstract: MTP4N80E MTP4N80
    Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP4N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS


    Original     		PDF MTP4N80E/D MTP4N80E MTP4N80E/D* AN569 MTP4N80E MTP4N80

    AN569

    Abstract: MTP4N80E
    Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP4N80E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS


    Original     		PDF MTP4N80E/D MTP4N80E MTP4N80E/D* AN569 MTP4N80E

    AN569

    Abstract: MTW16N40E
    Text: MOTOROLA Order this document by MTW16N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW16N40E Motorola Preferred Device TMOS POWER FET 16 AMPERES 400 VOLTS RDS on = 0.24 OHM


    Original     		PDF MTW16N40E/D O-247 MTW16N40E MTW16N40E/D* TransistorMTW16N40E/D AN569 MTW16N40E

    MTW7N80E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTW7N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW7N80E Motorola Preferred Device TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS on = 1.0 OHM


    Original     		PDF MTW7N80E/D O-247 MTW7N80E MTW7N80E/D* MTW7N80E

    AN569

    Abstract: MTY16N80E
    Text: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY16N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 16 AMPERES 800 VOLTS


    Original     		PDF MTY16N80E/D MTY16N80E MTY16N80E/D* AN569 MTY16N80E

    511 MOSFET TRANSISTOR motorola

    Abstract: MTP3N100E transistor 131-6 AN569
    Text: MOTOROLA Order this document by MTP3N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP3N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1000 VOLTS


    Original     		PDF MTP3N100E/D MTP3N100E MTP3N100E/D* 511 MOSFET TRANSISTOR motorola MTP3N100E transistor 131-6 AN569

    transistor mj 1503 motorola

    Abstract: mosfet transistor 400 volts.100 amperes AN569 MTE53N50E CISS 3010
    Text: MOTOROLA Order this document by MTE53N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet ISOTOP TMOS E-FET. Power Field Effect Transistor Designer's MTE53N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 53 AMPERES


    Original     		PDF MTE53N50E/D MTE53N50E MTE53N50E/D* transistor mj 1503 motorola mosfet transistor 400 volts.100 amperes AN569 MTE53N50E CISS 3010

    418C

    Abstract: AN569 MTB4N80E1
    Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E−FET. High Energy Power FET D2PAK−SL Straight Lead MTB4N80E1 Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate


    Original     		PDF MTB4N80E1/D MTB4N80E1 418C AN569 MTB4N80E1

    mtw14n50

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTW14N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW14N50E Motorola Preferred Device TMOS POWER FET 14 AMPERES 500 VOLTS RDS on = 0.40 OHM


    Original     		PDF MTW14N50E/D O-247 MTW14N50E MTW14N50E/D* TransistorMTW14N50E/D mtw14n50

    418C

    Abstract: AN569 MTB4N80E1
    Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB4N80E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTB4N80E1/D MTB4N80E1 418C AN569 MTB4N80E1

    AN569

    Abstract: MTY10N100E transistor 667 7A
    Text: MOTOROLA Order this document by MTY10N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY10N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 10 AMPERES 1000 VOLTS


    Original     		PDF MTY10N100E/D MTY10N100E MTY10N100E/D* AN569 MTY10N100E transistor 667 7A

    MTP1N100E

    Abstract: AN569
    Text: MOTOROLA Order this document by MTP1N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP1N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 1000 VOLTS


    Original     		PDF MTP1N100E/D MTP1N100E MTP1N100E/D* MTP1N100E AN569

    AN569

    Abstract: MTP2N50E
    Text: MOTOROLA Order this document by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP2N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS


    Original     		PDF MTP2N50E/D MTP2N50E MTP2N50E/D* AN569 MTP2N50E

    S 170 MOSFET TRANSISTOR

    Abstract: MTW20N50E-D TO-247 Package
    Text: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW20N50E Motorola Preferred Device TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.24 OHM


    Original     		PDF MTW20N50E/D O-247 MTW20N50E MTW20N50E/D* TransistorMTW20N50E/D S 170 MOSFET TRANSISTOR MTW20N50E-D TO-247 Package

    2N3904

    Abstract: AN569 MTP5N40E 221A-06 MTP5N40E-D
    Text: MOTOROLA Order this document by MTP5N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP5N40E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS on = 1.0 OHM


    Original     		PDF MTP5N40E/D MTP5N40E MTP5N40E/D* 2N3904 AN569 MTP5N40E 221A-06 MTP5N40E-D

    MTP10N40E

    Abstract: motorola an569 thermal 2N3904 AN569
    Text: MOTOROLA Order this document by MTP10N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP10N40E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS on = 0.55 OHMS This advanced high voltage TMOS E–FET is designed to


    Original     		PDF MTP10N40E/D MTP10N40E MTP10N40E/D* MTP10N40E motorola an569 thermal 2N3904 AN569

    D775

    Abstract: AN569 MTW24N40E 014 IR MOSFET Transistor high power transistor mosfet 740 MOSFET TRANSISTOR
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TW 24N40E T M O S E -FE T ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 24 AMPERES 400 VOLTS RDS on * °-16 0HM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF O-247 MTW24N40E 0E-05 0E-03 0E-02 0E-01 D775 AN569 014 IR MOSFET Transistor high power transistor mosfet 740 MOSFET TRANSISTOR

    mtp4n50e

    Abstract: 221A-06 AN569 TMOS E-FET FET MOSFET transistor "" 55sc
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T P 4 N 5 0E TM O S E -FE T ™ High Energy P o w er FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 500 VOLTS RDS on = 1-5 OHMS This advanced high voltage TMOS E -F E T is designed to


    OCR Scan     		PDF MTP4N50E mtp4n50e 221A-06 AN569 TMOS E-FET FET MOSFET transistor "" 55sc

    D 400 transistor data

    Abstract: AN569 MTP5N40E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TM O S E -FE T ™ High Energy P o w er FET MTP5N40E Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS on = 1-0 OHM This advanced high voltage TMOS E -F E T is designed to


    OCR Scan     		PDF MTP5N40E 2n3904 2n3904 D 400 transistor data AN569

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner's Data Sheet MTB2N40E TM O S E -FE T ™ High E nergy P o w er FET D2PAK fo r S u rfa c e M ount Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS on = 3.8 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTB2N40E

    16N40E

    Abstract: high power pulse generator with mosfet mosfet 16n 15
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TW 16N 40E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POW ER FET 16 AMPERES 400 VOLTS RDS on = 0.24 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF