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    MOSFET TRANSISTOR 3400 Search Results

    MOSFET TRANSISTOR 3400 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TRANSISTOR 3400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK


    Original     		PDF NP55N04SUG NP55N04SUG O-252 O-252)

    d1740

    Abstract: NP55N04SUG
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK


    Original     		PDF NP55N04SUG NP55N04SUG O-252 O-252) d1740

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPT007N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V IPT007N06N 1Description HSOF Features Tab •100%avalanchetested


    Original     		PDF IPT007N06N IEC61249-2-21

    731 MOSFET

    Abstract: 53368 A113 A114 A115 AN1955 ML200C MMG3002NT1 MMG30XX
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMG3002NT1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier Freescale Semiconductor, Inc.


    Original     		PDF MMG3002NT1/D MMG3002NT1 MMG3002NT1 731 MOSFET 53368 A113 A114 A115 AN1955 ML200C MMG30XX

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,40V IPA041N04NG DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,40V IPA041N04NG 1Description TO-220-FP Features •OptimizedtechnologyforDC/DCconverters


    Original     		PDF IPA041N04N O-220-FP IEC61249-2-21

    ATC100B3R3

    Abstract: AN1955 MRF7S35120HSR3 Header MTTF
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35120HS MRF7S35120HSR3 ATC100B3R3 AN1955 MRF7S35120HSR3 Header MTTF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35015HS MRF7S35015HSR3

    J161 mosfet transistor

    Abstract: 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 1, 8/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35015HS MRF7S35015HSR3 J161 mosfet transistor 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35120HS MRF7S35120HSR3 A114 A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35120HS MRF7S35120HSR3

    MRF7S35015H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35015HS MRF7S35015HSR3 MRF7S35015HS MRF7S35015H

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 2, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35120HS MRF7S35120HSR3 A114 A115 AN1955 C101 JESD22 MRF7S35120HSR3

    Untitled

    Abstract: No abstract text available
    Text: NTE2969 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Package Description: The NTE2969 is an N−channel enhancement mode power field effect transistor in a TO3P type package especially tailored to minimize on−state resistance, provide superior switching performance, and


    Original     		PDF NTE2969 NTE2969

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2736GR P-channel MOSFET R07DS0868EJ0100 Rev.1.00 Aug 28, 2012 –30 V, –14 A, 7.0 mΩ Description The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.


    Original     		PDF PA2736GR PA2736GR R07DS0868EJ0100 PA2736GR-E1-AT PA2736GR-E2-AT

    041N04N

    Abstract: IPP041N04N IEC61249-2-21 JESD22 PG-TO220-3
    Text: IPP041N04N G Type IPB041N04N G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 4.1 mΩ • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP041N04N IPB041N04N IEC61249-2-21 PG-TO263-3 PG-TO220-3 041N04N 041N04N IEC61249-2-21 JESD22 PG-TO220-3

    041N04N

    Abstract: PG-TO220-3 IPP041N04N JESD22
    Text: IPP041N04N G Type IPB041N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 4.1 mΩ ID 80 A 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPP041N04N IPB041N04N PG-TO263-3 PG-TO220-3 041N04N 041N04N PG-TO220-3 JESD22

    IEC61249-2-21

    Abstract: IPB015N04L JESD22 V8002
    Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level


    Original     		PDF IPB015N04L PG-TO263-3 IEC61249-2-21 015N04L IEC61249-2-21 JESD22 V8002

    Untitled

    Abstract: No abstract text available
    Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level


    Original     		PDF IPB015N04L PG-TO263-3 015N04L

    015N04L

    Abstract: IPB015N04L IPB015N04L G JESD22
    Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level


    Original     		PDF IPB015N04L PG-TO263-3 015N04L 015N04L IPB015N04L G JESD22

    038N04N

    Abstract: JESD22
    Text: Type IPD038N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.8 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications • N-channel, normal level


    Original     		PDF IPD038N04N PG-TO252-3 038N04N 038N04N JESD22

    Untitled

    Abstract: No abstract text available
    Text: IPP041N04N G Type IPB041N04N G  3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 4.1 mW • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP041N04N IPB041N04N IEC61249-2-21 PG-TO263-3 PG-TO220-3 041N04N

    DALE NTHS-1206N02

    Abstract: dale thermistor curve NTHS NTHS 1206n02 Thermistor NTC 400k 3 pin preset resistor 10k ic 4050 pin diagram P channel MOSFET 10A thermistor ntc r1 LTC4050 MBRM120T3
    Text: Final Electrical Specifications LTC4050 Lithium-Ion Linear Battery Charger Controller with Thermistor Interface U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 4050-4.1/LTC4050-4.2 are complete stand-alone constant-current/constant-voltage linear charge controllers for lithium-ion Li-Ion batteries. Charge current is


    Original     		PDF LTC4050 1/LTC4050-4 LTC1731 LTC1732 LTC1734 4050i DALE NTHS-1206N02 dale thermistor curve NTHS NTHS 1206n02 Thermistor NTC 400k 3 pin preset resistor 10k ic 4050 pin diagram P channel MOSFET 10A thermistor ntc r1 LTC4050 MBRM120T3

    NEC 10F triac

    Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
    Text: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2


    Original     		PDF G10748EJDV0SG00 NEC 10F triac 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272

    lc4050

    Abstract: 3.7V Li-Ion battery charge controller with 5v g05, thermistor LT4050 dale thermistor curve NTHS LTC4050 dale 2k thermistor curve 196KT transistor BD 249 Thermistor 400k
    Text: LTC4050 Lithium-Ion Linear Battery Charger with Thermistor Interface U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Complete Standalone Linear Charger Controller for 1-Cell Lithium-Ion Batteries Thermistor Interface for Battery Temperature


    Original     		PDF LTC4050 10-Pin 100mA/500mA 4050f lc4050 3.7V Li-Ion battery charge controller with 5v g05, thermistor LT4050 dale thermistor curve NTHS LTC4050 dale 2k thermistor curve 196KT transistor BD 249 Thermistor 400k