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Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK
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NP55N04SUG
NP55N04SUG
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O-252)
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d1740
Abstract: NP55N04SUG
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK
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NP55N04SUG
NP55N04SUG
O-252
O-252)
d1740
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Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPT007N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V IPT007N06N 1Description HSOF Features Tab •100%avalanchetested
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IPT007N06N
IEC61249-2-21
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731 MOSFET
Abstract: 53368 A113 A114 A115 AN1955 ML200C MMG3002NT1 MMG30XX
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMG3002NT1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier Freescale Semiconductor, Inc.
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MMG3002NT1/D
MMG3002NT1
MMG3002NT1
731 MOSFET
53368
A113
A114
A115
AN1955
ML200C
MMG30XX
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Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,40V IPA041N04NG DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,40V IPA041N04NG 1Description TO-220-FP Features •OptimizedtechnologyforDC/DCconverters
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IPA041N04N
O-220-FP
IEC61249-2-21
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ATC100B3R3
Abstract: AN1955 MRF7S35120HSR3 Header MTTF
Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
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MRF7S35120HS
MRF7S35120HSR3
ATC100B3R3
AN1955
MRF7S35120HSR3
Header MTTF
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
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MRF7S35015HS
MRF7S35015HSR3
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J161 mosfet transistor
Abstract: 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 1, 8/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
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MRF7S35015HS
MRF7S35015HSR3
J161 mosfet transistor
465J
400S
A114
A115
AN1955
C101
JESD22
MRF7S35015HSR3
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A114
Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500
Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
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MRF7S35120HS
MRF7S35120HSR3
A114
A115
AN1955
C101
JESD22
MRF7S35120HSR3
CRCW120651R0FKEA
32V500
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
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MRF7S35120HS
MRF7S35120HSR3
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MRF7S35015H
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
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MRF7S35015HS
MRF7S35015HSR3
MRF7S35015HS
MRF7S35015H
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A114
Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 2, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
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MRF7S35120HS
MRF7S35120HSR3
A114
A115
AN1955
C101
JESD22
MRF7S35120HSR3
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Untitled
Abstract: No abstract text available
Text: NTE2969 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Package Description: The NTE2969 is an N−channel enhancement mode power field effect transistor in a TO3P type package especially tailored to minimize on−state resistance, provide superior switching performance, and
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NTE2969
NTE2969
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Untitled
Abstract: No abstract text available
Text: Data Sheet PA2736GR P-channel MOSFET R07DS0868EJ0100 Rev.1.00 Aug 28, 2012 –30 V, –14 A, 7.0 mΩ Description The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
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PA2736GR
PA2736GR
R07DS0868EJ0100
PA2736GR-E1-AT
PA2736GR-E2-AT
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041N04N
Abstract: IPP041N04N IEC61249-2-21 JESD22 PG-TO220-3
Text: IPP041N04N G Type IPB041N04N G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 4.1 mΩ • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications
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IPP041N04N
IPB041N04N
IEC61249-2-21
PG-TO263-3
PG-TO220-3
041N04N
041N04N
IEC61249-2-21
JESD22
PG-TO220-3
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041N04N
Abstract: PG-TO220-3 IPP041N04N JESD22
Text: IPP041N04N G Type IPB041N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 4.1 mΩ ID 80 A 1) • Qualified according to JEDEC for target applications
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IPP041N04N
IPB041N04N
PG-TO263-3
PG-TO220-3
041N04N
041N04N
PG-TO220-3
JESD22
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IEC61249-2-21
Abstract: IPB015N04L JESD22 V8002
Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level
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IPB015N04L
PG-TO263-3
IEC61249-2-21
015N04L
IEC61249-2-21
JESD22
V8002
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Untitled
Abstract: No abstract text available
Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level
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IPB015N04L
PG-TO263-3
015N04L
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015N04L
Abstract: IPB015N04L IPB015N04L G JESD22
Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level
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IPB015N04L
PG-TO263-3
015N04L
015N04L
IPB015N04L G
JESD22
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038N04N
Abstract: JESD22
Text: Type IPD038N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.8 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications • N-channel, normal level
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IPD038N04N
PG-TO252-3
038N04N
038N04N
JESD22
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Untitled
Abstract: No abstract text available
Text: IPP041N04N G Type IPB041N04N G 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 4.1 mW • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications
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IPP041N04N
IPB041N04N
IEC61249-2-21
PG-TO263-3
PG-TO220-3
041N04N
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DALE NTHS-1206N02
Abstract: dale thermistor curve NTHS NTHS 1206n02 Thermistor NTC 400k 3 pin preset resistor 10k ic 4050 pin diagram P channel MOSFET 10A thermistor ntc r1 LTC4050 MBRM120T3
Text: Final Electrical Specifications LTC4050 Lithium-Ion Linear Battery Charger Controller with Thermistor Interface U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 4050-4.1/LTC4050-4.2 are complete stand-alone constant-current/constant-voltage linear charge controllers for lithium-ion Li-Ion batteries. Charge current is
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LTC4050
1/LTC4050-4
LTC1731
LTC1732
LTC1734
4050i
DALE NTHS-1206N02
dale thermistor curve NTHS
NTHS 1206n02
Thermistor NTC 400k
3 pin preset resistor 10k
ic 4050 pin diagram
P channel MOSFET 10A
thermistor ntc r1
LTC4050
MBRM120T3
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NEC 10F triac
Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
Text: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2
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G10748EJDV0SG00
NEC 10F triac
10F triac NEC
scr 5P4M
2P4M PIN DIAGRAM
thyristor battery charger 2p4m
3S4M SCR
Ringing Choke Converter
equivalent scr 2p4m
3s4m thyristor
2SK1272
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lc4050
Abstract: 3.7V Li-Ion battery charge controller with 5v g05, thermistor LT4050 dale thermistor curve NTHS LTC4050 dale 2k thermistor curve 196KT transistor BD 249 Thermistor 400k
Text: LTC4050 Lithium-Ion Linear Battery Charger with Thermistor Interface U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Complete Standalone Linear Charger Controller for 1-Cell Lithium-Ion Batteries Thermistor Interface for Battery Temperature
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LTC4050
10-Pin
100mA/500mA
4050f
lc4050
3.7V Li-Ion battery charge controller with 5v
g05, thermistor
LT4050
dale thermistor curve NTHS
LTC4050
dale 2k thermistor curve
196KT
transistor BD 249
Thermistor 400k
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