Untitled
Abstract: No abstract text available
Text: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance
|
Original
|
PE84140
PE84140
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance
|
Original
|
PE4141
PE4141
|
PDF
|
marking code 8 lead msop package analog devices
Abstract: marking code 10 lead msop package analog devices Analog devices marking Information MSOP Analog 8 msop devices marking pe4141 marking code 8 lead msop package
Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance
|
Original
|
PE4141
PE4141
marking code 8 lead msop package analog devices
marking code 10 lead msop package analog devices
Analog devices marking Information MSOP
Analog 8 msop devices marking
marking code 8 lead msop package
|
PDF
|
quad mosfet array
Abstract: 731 MOSFET PE84140 PE84140-EK 8 mosfet array F617
Text: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance
|
Original
|
PE84140
PE84140
quad mosfet array
731 MOSFET
PE84140-EK
8 mosfet array
F617
|
PDF
|
Yaesu
Abstract: marking code msop - 8 package analog devices F617 a007 PE4141-08MSOP-EK Analog 8 msop devices marking marking code 8 lead msop package analog devices
Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable
|
Original
|
PE4141
PE4141
Yaesu
marking code msop - 8 package analog devices
F617
a007
PE4141-08MSOP-EK
Analog 8 msop devices marking
marking code 8 lead msop package analog devices
|
PDF
|
PE4141
Abstract: No abstract text available
Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance
|
Original
|
PE4141
PE4141
|
PDF
|
Untitled
Abstract: No abstract text available
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.
|
Original
|
|
PDF
|
20V P-Channel Power MOSFET
Abstract: US6M2
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
|
Original
|
US6M11
R0039A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
|
Original
|
US6M11
R0039A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
|
Original
|
|
PDF
|
QS6M4
Abstract: No abstract text available
Text: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.
|
Original
|
|
PDF
|
EM6M1
Abstract: MOSFET IGSS 100A
Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch+Pch MOSFET EM6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.
|
Original
|
R0039A
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch+Pch MOSFET EM6M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.
|
Original
|
R0039A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode.
|
Original
|
US6M11
R0039A
|
PDF
|
QS6M4
Abstract: No abstract text available
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Dimensions Unit : mm Structure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (6) 0.85 0.7 (4) 1.6 2.8 Features 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.
|
Original
|
|
PDF
|
FDD8N50NZ
Abstract: FDD8N50 FDD8N50NZTM
Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and
|
Original
|
FDD8N50NZ
FDD8N50NZ
FDD8N50
FDD8N50NZTM
|
PDF
|
QS6M4
Abstract: No abstract text available
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Fuji Power MOSFET Target Specification 2SK3523-01R 1.Scope This specifies Fuji Power MOSFET 2SK3523-01R 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-3PF 5.Absolute Maximum Ratings at Tc=25°° C unless otherwise specified
|
Original
|
2SK3523-01R
MT5F11620
|
PDF
|
TSMT6
Abstract: voltage source inverter z source inverter QS6M4
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.
|
Original
|
|
PDF
|
mosfet specification
Abstract: TA4180
Text: Fuji power MOSFET Specification 2 3 1. Scope This specifies Fuji power MOSFET 2. Outline I Construction H) Application DI) Outview 1 O 1 6 2 SK 1 0 1 6 N-channel enhancement mode power MOSFET for switching T0-3P 3. Absolute raaxiamia ratings at Tc=25 ’
|
OCR Scan
|
MT5F1306
MT5F1308JÂ
MT5F130S
MT5F1306
MT5F13QBfa
MT5F13061
MT5F1306^
MT5F130e^
F1308$
MT5F1306jS
mosfet specification
TA4180
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LM2725,LM2726 LM2725/LM2726 High Speed Synchronous MOSFET Drivers Literature Number: SNVS144B LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that drive both the top MOSFET and bottom MOSFET in a pushpull structure simultaneously. It takes a logic level PWM input
|
Original
|
LM2725
LM2726
LM2725/LM2726
SNVS144B
LM272/clocks
|
PDF
|
POWER MOSFET Rise Time 1 ns
Abstract: IXZ4DF18N50 S 170 MOSFET DEIC-515 mosfet IDM 200 DEIC515 rf mosfet power amplifier 10UF IXZ318N50 deic 515
Text: IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver matched to MOSFET 500 Volts 19 A 0.29 Ohms Features • Isolated substrate − high isolation voltage >2500V − excellent thermal transfer
|
Original
|
IXZ4DF18N50
DEIC-515
IXZ318N50
IXZ4DF18N50
POWER MOSFET Rise Time 1 ns
S 170 MOSFET
mosfet IDM 200
DEIC515
rf mosfet power amplifier
10UF
deic 515
|
PDF
|
