9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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FDT3N40
Abstract: No abstract text available
Text: FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features Description • RDS on = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDT3N40
FDT3N40
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4435 mosfet
Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
Text: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展
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APM70N03
APM3005/7/9N
APM2509/6/4N
MO-23/25/26/89,
SC-70
0V/20V,
30mohm
/55mohm~
APM2300A/2322/2324,
APM2310/2320/2306,
4435 mosfet
APM2014
4410 mosfet
MOSFET 4420
4435* mos
4435 sc
MOSFET 4435
9935 mosfet
ANPEC
APM2310
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT9971P Power MOSFET 5.0A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT9971P is an N-Channel enhancement mode power MOSFET providing customers with high switching speed, cost-effectiveness and minimum on-state resistance.
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UT9971P
UT9971P
UT9971PL-AA3-R
UT9971PG-AA3-R
OT-223
QW-R502-764
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Untitled
Abstract: No abstract text available
Text: N-Channel QFET MOSFET 800V, 0.2 A, 20 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQT1N80TF
OT-223n
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fqt1n60
Abstract: FQT1N60C 1A 300V mosfet
Text: N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQT1N60C
FQT1N60C
OT-223
fqt1n60
1A 300V mosfet
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522BS
Abstract: BSP75GTA
Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over
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BSP75G
550mJ
OT223
522-BSP75GTA
BSP75GTA
522BS
BSP75GTA
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Untitled
Abstract: No abstract text available
Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over
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BSP75G
550mJ
OT223
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Untitled
Abstract: No abstract text available
Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over
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BSP75N
550mJ
OT223
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT9971P Preliminary Power MOSFET 5.0A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT9971P is an N-Channel enhancement mode power MOSFET providing customers with high switching speed, cost-effectiveness and minimum on-state resistance.
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UT9971P
UT9971P
UT9971PL-AA3-R
UT9971PG-AA3-R
OT-223
QW-R502-764
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HUF75307D
Abstract: No abstract text available
Text: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology
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5V/75A/0
OT-223
O-251AA/252AA
O-220AB
HUF75345P3
HUF75343P3
HUF75339P3
HUF75337P3
HUF75333P3
O-262AA/263AB
HUF75307D
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BSP75N
Abstract: No abstract text available
Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over
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BSP75N
550mJ
OT223
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BSP75G
Abstract: BSP75GTA BSP75GTC
Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over
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BSP75G
550mJ
OT223
BSP75G
BSP75GTA
BSP75GTC
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3055L transistor
Abstract: Mosfet Sot223
Text: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,
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RFT3055LE
TA49158.
RFT3055LE
OT-223
330mm
EIA-481
3055L transistor
Mosfet Sot223
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Mosfet
Abstract: SSF1502G5
Text: SSF1502G5 150V N-Channel MOSFET Main Product Characteristics VDSS 150V RDS on 0.14Ω(typ) ID 6A SOT223 Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF1502G5
OT223
1502G5
Mosfet
SSF1502G5
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Untitled
Abstract: No abstract text available
Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over
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BSP75G
550mJ
OT223
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed. FEATURES
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UF601
UF601
UF601G-AA3-R
UF601G-AE3-R
OT-223
OT-23
QW-R502-699
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Untitled
Abstract: No abstract text available
Text: FQT7N10L N-Channel QFET MOSFET 100 V, 1.7 A, 350 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially
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FQT7N10L
FQT7N10L
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TRANSISTOR K 135 mosfet
Abstract: No abstract text available
Text: PMT200EN 100 V N-channel Trench MOSFET 25 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMT200EN
OT223
SC-73)
TRANSISTOR K 135 mosfet
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe
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QW-R502-394
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FQT7N10
Abstract: No abstract text available
Text: FQT7N10 N-Channel QFET MOSFET 100 V, 1.7 A, 350 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially
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FQT7N10
FQT7N10
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Untitled
Abstract: No abstract text available
Text: FQT3P20 P-Channel QFET MOSFET -200 V, -0.67 A, 2.7 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQT3P20
OT-223
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FQT13N06L
Abstract: No abstract text available
Text: FQT13N06L N-Channel QFET MOSFET 60 V, 2.8 A, 140 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially
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FQT13N06L
FQT13N06L
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Untitled
Abstract: No abstract text available
Text: FQT7N10 N-Channel QFET MOSFET 100 V, 1.7 A, 350 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially
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FQT7N10
FQT7N10
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