Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET SOT-23 MARKING CODE 122 Search Results

    MOSFET SOT-23 MARKING CODE 122 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET SOT-23 MARKING CODE 122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2315DS

    Abstract: No abstract text available
    Text: Si2315DS Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.5 0.075 @ VGS = –2.5 V "3 0.118 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2315DS (C5)* *Marking Code


    Original     		PDF Si2315DS O-236 OT-23) S-56947--Rev. 28-Dec-98

    Untitled

    Abstract: No abstract text available
    Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.5 0.075 @ VGS = –2.5 V "3 0.118 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2315DS (C5)* *Marking Code


    Original     		PDF Si2315DS O-236 OT-23) S-56947--Rev. 28-Dec-98

    Untitled

    Abstract: No abstract text available
    Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2315DS (C5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2315DS O-236 OT-23) S-56947--Rev. 28-Dec-98

    mosfet SOD 23

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ THRU BSS8LT1 FM1200-M+ 200 mAmps, 50 Volts Power MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF OD-123+ FM120-M+ FM1200-M+ OD-123H FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH mosfet SOD 23

    IGBT Battery 120 watt Charger circuit diagrams

    Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
    Text: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .


    Original     		PDF BRD8016/D Nov-2000 r14525 IGBT Battery 120 watt Charger circuit diagrams tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494

    marking 702

    Abstract: 2N7002LT ON
    Text: WILLAS FM120-M+ THRU 2N7002LT1 FM1200-M+ Small Signal MOSFET 115 mAmps, 60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


    Original     		PDF OD-123+ FM120-M+ 2N7002LT FM1200-M+ OD-123H FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH marking 702 2N7002LT ON

    marking code C4 Sot 23-5

    Abstract: EIAJ-SC74A sot23-5 marking code LDC MAX828 Marking C4 SOT23-5 INVERTER 10kW sot 23-5 mark c2 marking code AC sot 23-5 1N4148 1N5817
    Text: MAX828 MAX829 Switched Capacitor Voltage Converters The MAX828/829 are CMOS “charge–pump” voltage converters in ultra–small SOT–23 5 lead packages. They invert and/or double an input voltage which can range from +1.5V to +5.5V. Conversion efficiency is typically >95%. Switching frequency is 12kHz for the


    Original     		PDF MAX828 MAX829 MAX828/829 12kHz 35kHz MAX829. MAX828) MAX829) marking code C4 Sot 23-5 EIAJ-SC74A sot23-5 marking code LDC Marking C4 SOT23-5 INVERTER 10kW sot 23-5 mark c2 marking code AC sot 23-5 1N4148 1N5817

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    TL556

    Abstract: SCHOTTKY SOD-123
    Text: WILLAS FM120-M+ BSS84LT1 THRU FM1200-M+ mAmps, 50 Volts 130 BARRIER RECTIFIERS -20V- 200V Power 1.0A SURFACEMOSFET MOUNT SCHOTTKY SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF OD-123+ FM120-M+ BSS84LT FM1200-M+ OD-123H FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH TL556 SCHOTTKY SOD-123

    Untitled

    Abstract: No abstract text available
    Text: TPS562200, TPS562209 www.ti.com SLVSCB0A – JANUARY 2014 – REVISED JANUARY 2014 TPS56220x 4.5 V to 17 V Input, 2-A Synchronous Step-Down Voltage Regulator in SOT-23 Check for Samples: TPS562200, TPS562209 FEATURES DESCRIPTION • The TPS562200 and TPS562209 are simple, easy-touse, 2 A synchronous step-down buck converters in


    Original     		PDF TPS562200, TPS562209 TPS56220x OT-23 TPS562200 TPS562209 OT-23 650-kHz

    Untitled

    Abstract: No abstract text available
    Text: TPS562200, TPS562209 www.ti.com SLVSCB0A – JANUARY 2014 – REVISED JANUARY 2014 TPS56220x 4.5 V to 17 V Input, 2-A Synchronous Step-Down Voltage Regulator in SOT-23 Check for Samples: TPS562200, TPS562209 FEATURES DESCRIPTION • The TPS562200 and TPS562209 are simple, easy-touse, 2 A synchronous step-down buck converters in


    Original     		PDF TPS562200, TPS562209 TPS56220x OT-23 TPS562200 TPS562209 OT-23 650-kHz

    Untitled

    Abstract: No abstract text available
    Text: TPS562200, TPS562209 www.ti.com SLVSCB0A – JANUARY 2014 – REVISED JANUARY 2014 TPS56220x 4.5 V to 17 V Input, 2-A Synchronous Step-Down Voltage Regulator in SOT-23 Check for Samples: TPS562200, TPS562209 FEATURES DESCRIPTION • The TPS562200 and TPS562209 are simple, easy-touse, 2 A synchronous step-down buck converters in


    Original     		PDF TPS562200, TPS562209 TPS56220x OT-23 TPS562200 TPS562209 OT-23 650-kHz

    2N7002ELT

    Abstract: 2N7002ELT1
    Text: WILLAS FM120-M+ 2N7002ELT1 THRU FM1200-M+ Small Signal MOSFET 310 mAmps, 60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers


    Original     		PDF OD-123+ FM120-M+ 2N7002ELT FM1200-M+ OD-123H Sili020 FM120-MH FM130-MH FM140-MH FM150-MH 2N7002ELT1

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    TSSOP-8 footprint and soldering sot-23

    Abstract: No abstract text available
    Text: MTB50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTB50N06V TSSOP-8 footprint and soldering sot-23

    STP4119

    Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
    Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices


    Original     		PDF SG388/D May-2007 STP4119 Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ THRU 2N4003NLT1 FM1200-M+ Small Signal MOSFET 30V,0.56A, SOT-23 1.0A SURFACE MOUNT SCHOTTKY BARRIER Single, RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


    Original     		PDF OT-23 OD-123+ FM120-M+ 2N4003NLTHRU FM1200-M+ OD-123H 125and FM120-MH FM130-MH FM140-MH

    SOT-23-5 MARKING VF

    Abstract: 1N4148 SOT-23 MAX828 sot-23-5 vishay cornell tsc 593D MAX828EUK MAX828EUKG MAX829 MAX829EUK
    Text: MAX828, MAX829 Switched Capacitor Voltage Converter The MAX828 and MAX829 are CMOS charge pump voltage inverters that are designed for operation over an input voltage range of 1.15 V to 5.5 V with an output current capability in excess of 50 mA. The operating current consumption is only 68 mA for the MAX828 and


    Original     		PDF MAX828, MAX829 MAX828 MAX829 MAX829. MAX829, SOT-23-5 MARKING VF 1N4148 SOT-23 sot-23-5 vishay cornell tsc 593D MAX828EUK MAX828EUKG MAX829EUK

    Untitled

    Abstract: No abstract text available
    Text: MTD20N06HD Preferred Device Power MOSFET 20 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTD20N06HD MTD20N06HD/D

    t75N03hdl

    Abstract: No abstract text available
    Text: MTB75N03HDL Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTB75N03HDL r14525 MTB75N03HDL/D t75N03hdl

    FR4 GLASS EPOXY

    Abstract: No abstract text available
    Text: MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTB36N06V MTB36N06V/D FR4 GLASS EPOXY

    20n06hd

    Abstract: 20n 06hd MTD20N06HDT4 369D AN569 MTD20N06HD 20N06H 06HD
    Text: MTD20N06HD Preferred Device Power MOSFET 20 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTD20N06HD MTD20N06HD/D 20n06hd 20n 06hd MTD20N06HDT4 369D AN569 MTD20N06HD 20N06H 06HD

    transistor Bf 966

    Abstract: LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET
    Text: TELEFUNKEN ELECTRONIC ¥ ilL ilF O *lK l electronic 61C D • S^Dmb '7 s 3 / - 2 - S T ' 00052b2 0 BIAL66 BF 9 6 6 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners


    OCR Scan     		PDF 00052b2 IAL66 ft-11 569-GS 000s154 hal66 if-11 transistor Bf 966 LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET

    transistor k 3562

    Abstract: transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF
    Text: TELEFUNKEN ELECTRONIC ¥ilLilFO*lKl electronic 61C D • S^Dmb '7s 3 / -2 - S T ' 00052b2 0 BIAL66 BF 966 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners


    OCR Scan     		PDF 00052b2 IAL66 ft-11 569-GS 000S154 HAL66 if-11 transistor k 3562 transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF