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    MOSFET SOT-23 DATASHEET Search Results

    MOSFET SOT-23 DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET SOT-23 DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRLML6402PbF-1 VDS RDS on max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -20 V 0.065 Ω 8.0 nC -3.7 A HEXFET Power MOSFET G 1 3 D S 2 Micro3 (SOT-23) Features Industry-standard pinout SOT-23 Package Compatible with Existing Surface Mount Techniques


    Original     		PDF IRLML6402PbF-1 OT-23) OT-23 IRLML6402TRPbF-1 D-020D

    Untitled

    Abstract: No abstract text available
    Text: SSS2N7002L N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) ( ) Max D 3.0 @VGS = 10V 60V G 4.0 @VGS = 5V 0.25A S 7.5 @VGS = 2.5V D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-23 package.


    Original     		PDF SSS2N7002L OT-23 OT-23

    rku SOT-23

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET Datasheet RK7002BM Structure Silicon N-channel MOSFET Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RKU Application Switching


    Original     		PDF RK7002BM OT-23> R1102A rku SOT-23

    RK7002BM

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET Datasheet RK7002BM Structure Silicon N-channel MOSFET Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RKT Application Switching


    Original     		PDF RK7002BM OT-23> R1102A RK7002BM

    South Sea Semiconductor

    Abstract: 1s10m
    Text: SSS3403 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -30V -3.4A SOT-23 RDS(ON) (mΩ) Max D 45 @VGS = -10V G 80 @VGS = -4.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb free.


    Original     		PDF SSS3403 OT-23 OT-23 South Sea Semiconductor 1s10m

    Untitled

    Abstract: No abstract text available
    Text: SSS3402A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (m ) Max D 60 @VGS = 10V 25V G 3A 80 @VGS = 4.5V S 170 @VGS = 2.5V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S


    Original     		PDF SSS3402A OT-23 OT-23

    MOSFET N SOT-23

    Abstract: No abstract text available
    Text: SSS2N7002K N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-23 RDS(ON) D 3.0 @VGS = 10V G 4.0 @VGS = 5V S D FEATURES Super high density cell design for low RDS(ON). Gate-source ESD protection diodes. Rugged and reliable. G SOT-23 package.


    Original     		PDF SSS2N7002K OT-23 OT-23 MOSFET N SOT-23

    SSS2301A

    Abstract: sot-23 P-Channel MOSFET
    Text: SSS2301A P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb free.


    Original     		PDF SSS2301A OT-23 OT-23 SSS2301A sot-23 P-Channel MOSFET

    sss2309

    Abstract: No abstract text available
    Text: SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


    Original     		PDF SSS2309 OT-23 OT-23 sss2309

    SSS2209

    Abstract: sot-23 P-Channel MOSFET
    Text: SSS2209 P-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 170 @VGS = -4.5V -2.0A -20V G 240 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


    Original     		PDF SSS2209 OT-23 OT-23 SSS2209 sot-23 P-Channel MOSFET

    sot-23 P-Channel MOSFET

    Abstract: No abstract text available
    Text: SSS2323 P-Channel Enhancement Mode MOSFET SOT-23 Product Summary VDS V ID (A) D RDS(ON) 35 @VGS = -4.5V G 55 @VGS = -2.5V -4A -20V S 100 @VGS = -1.8V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S Pb free.


    Original     		PDF SSS2323 OT-23 OT-23 sot-23 P-Channel MOSFET

    tjm sot23

    Abstract: sss0610
    Text: SSS0610 P-Channel Enhancement Mode MOSFET Product Summary ID A -60V -0.185A RDS(ON) ( ) Max 10 06 VDS (V) SOT-23 D YW 7.5 @VGS = 10V G 10.0 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. Pb Free.


    Original     		PDF SSS0610 OT-23 OT-23 tjm sot23 sss0610

    MOSFET N SOT-23

    Abstract: No abstract text available
    Text: SSS0201L N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (Ω) Max D YW 1L 1.3 @VGS = 4.5V 0.5A 20V 20 VDS (V) SOT-23 G 1.6 @VGS = 2.5V S D FEATURES Super high density cell design for low RDS(ON) . G Rugged and reliable. SOT-23 package. S


    Original     		PDF SSS0201L OT-23 OT-23 MOSFET N SOT-23

    sot-23 P-Channel MOSFET

    Abstract: No abstract text available
    Text: SSS3401L P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (mΩ) Max D 70 @VGS = -10V G -3A -30V 95 @VGS = -4.5V S 190 @VGS = -2.5V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package.


    Original     		PDF SSS3401L OT-23 OT-23 sot-23 P-Channel MOSFET

    MOSFET N SOT-23

    Abstract: DS1060
    Text: SSS2N7002E N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (Ω) Max D YW 02 3.0 @VGS = 10V 0.25A 60V 70 VDS (V) SOT-23 G 4.0 @VGS = 5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb Free.


    Original     		PDF SSS2N7002E OT-23 OT-23 MOSFET N SOT-23 DS1060

    tic 2250

    Abstract: No abstract text available
    Text: SSS2316 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (mΩ) Max D 20 @VGS = 4.5V G 30 @VGS = 2.5V 5A 20V S 45 @VGS = 1.8V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S


    Original     		PDF SSS2316 OT-23 OT-23 Operati50% tic 2250

    IRLML2502TRPBF

    Abstract: IRLML2502PbF
    Text: IRLML2502PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 20 V 0.045 Ω 8.0 nC 4.2 A G 1 3 D S 2 Micro3 (SOT-23) Features Industry-standard pinout SOT-23 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free


    Original     		PDF IRLML2502PbF-1 OT-23) OT-23 IRLML2502TRPbF-1 D-020D IRLML2502TRPBF IRLML2502PbF

    SSS2308

    Abstract: n-channel enhancement
    Text: SSS2308 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 20V 2.3A SOT-23 RDS(ON) (mΩ) Max D 80 @VGS = 4.5V G 110 @VGS = 2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package. S o


    Original     		PDF SSS2308 OT-23 OT-23 SSS2308 n-channel enhancement

    Untitled

    Abstract: No abstract text available
    Text: IRLML2402PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 20 V 0.25 Ω 2.6 nC 1.2 A G 1 3 D S 2 Micro3 (SOT-23) Features Industry-standard pinout SOT-23 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free


    Original     		PDF IRLML2402PbF-1 OT-23) OT-23 IRLML2402TRPbF-1 D-020D

    tjm sot23

    Abstract: No abstract text available
    Text: SSS2304 N-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 55 @VGS = 4.5V G 80 @VGS = 2.5V 3.2A 20V S 120 @VGS = 1.8V D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


    Original     		PDF SSS2304 OT-23 OT-23 tjm sot23

    IRLML6302

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1259A IRLML6302 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = -20V RDS(on) = 0.60Ω


    Original     		PDF IRLML6302 OT-23 incorp50 IRLML6302

    IRLML2803

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1258A IRLML2803 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = 30V RDS(on) = 0.25Ω


    Original     		PDF IRLML2803 OT-23 IRLML2803

    IRLML2402

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1257A IRLML2402 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = 20V RDS(on) = 0.25Ω


    Original     		PDF IRLML2402 OT-23 incorpo100 IRLML2402

    IRLML5103

    Abstract: sot23 footprint
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1260A IRLML5103 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = -30V RDS(on) = 0.60Ω


    Original     		PDF IRLML5103 OT-23 incorp00 IRLML5103 sot23 footprint