MOSFET RF POWER TRANSISTOR VHF Search Results

MOSFET RF POWER TRANSISTOR VHF Result Highlights (5)

Part	Manufacturer	Description
BLF278C	Rochester Electronics	VHF power MOS transistor
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL

MOSFET RF POWER TRANSISTOR VHF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GP4060 Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.	Original	RD07MVS1B 175MHz 520MHz RD07MVS1B RD07MVS1 175MHz) 520MHz) Oct2011 GP4060	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.	Original	RD07MVS1B 175MHz 520MHz RD07MVS1 RD07MVS1B 520MHz	PDF
A 1469 mosfet Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin	PDF
3M Touch Systems Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 175MHz) 520MHz) 3M Touch Systems	PDF
212J Abstract: rd30hvf Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	RD30HVF1 RD30HVF1 175MHz RD30HVF1-101 212J rd30hvf	PDF
RD02MUS1 Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17	PDF
RD30HVF1 Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 RD30HVF1-101 rf power transistor rd30hvf1 100OHM	PDF
RD07MUS2B Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773	PDF
A 1469 mosfet Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM mosfet 800 v MITSUBISHI RF POWER MOS FET	PDF
RD02MUS1 Abstract: RD02MUS1-101 T112 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 3M Touch Systems	PDF
RD30HVF1 Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet	PDF
MITSUBISHI RF POWER MOS FET Abstract: 071J Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3	Original	RD30HVF1 175MHz RD30HVF1 RD30HVF1-101 Oct2011 MITSUBISHI RF POWER MOS FET 071J	PDF
RD07MUS2B Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053 Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.	Original	RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3	Original	RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101	PDF

DIODE GP 704 Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) DIODE GP 704 transistor mosfet 536 VGS-75 0452 mosfet	PDF
MRF173 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz	Original	MRF173 MRF173. AN721, MRF173	PDF
transistor+SMD+12W+MOSFET Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power	Original	RD12MVS1 175MHz, RD12MVS1 175MHz) transistor+SMD+12W+MOSFET	PDF
marking 7W 66 Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041 Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15	Original	RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041	PDF
transistor D 1666 Abstract: transistor 801 diagrams Text: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) 7.0+/-0.2 0.2+/-0.05	Original	RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) Oct2011 transistor D 1666 transistor 801 diagrams	PDF
RD07MVS1 Abstract: transistor t06 19 transistor t06 RF Transistor s-parameter 501 mosfet transistor transistor 5508 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) transistor t06 19 transistor t06 RF Transistor s-parameter 501 mosfet transistor transistor 5508	PDF
MOSFET mark J7 Abstract: 78s12 RD12MVS 043mm transistor t06 19 Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power	Original	RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) RD12MVS1-101 Oct2011 MOSFET mark J7 78s12 RD12MVS 043mm transistor t06 19	PDF
AN-UHF-098 Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15	Original	RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) AN-UHF-098	PDF
mosfet 1412 Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 6.0+/-0.15 0.2+/-0.05 specifically designed for VHF/UHF RF power RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 175MHz, 175MHz) 520MHz) mosfet 1412	PDF
RF MOSFETs Abstract: motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field E ffect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz	OCR Scan	MRF173. AN721, MRF173 RF MOSFETs motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET	PDF

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MOSFET RF POWER TRANSISTOR VHF Search Results

MOSFET RF POWER TRANSISTOR VHF Result Highlights (5)

MOSFET RF POWER TRANSISTOR VHF Datasheets Context Search

GP4060

Untitled

A 1469 mosfet

3M Touch Systems

212J

RD02MUS1

RD30HVF1

RD07MUS2B

A 1469 mosfet

RD02MUS1

RD30HVF1

MITSUBISHI RF POWER MOS FET

RD07MUS2B

Untitled

DIODE GP 704

MRF173

transistor+SMD+12W+MOSFET

marking 7W 66

transistor D 1666

RD07MVS1

MOSFET mark J7

AN-UHF-098

mosfet 1412

RF MOSFETs