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    MOSFET P51 Search Results

    MOSFET P51 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P51 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    circuit diagram of 13.56MHz RF Generator

    Abstract: schematic rf Power supply 500w PRF-1150 schematic rf Power supply 500w 13.56MHz DRF1200 1kw mosfet GRM21BR71H474KA88L 13.56MHZ mosfet zener diode c24 5t RF inductor 13.56 MHz
    Text: Application Note 1811 December 2008 13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET


    Original     		PDF DRF1200 DRF1200/Class-E an6-13131-1-ND DRF1200 140-XRL16V10-RC GRM21BR71H474KA88L 140-XRL35V10-RC circuit diagram of 13.56MHz RF Generator schematic rf Power supply 500w PRF-1150 schematic rf Power supply 500w 13.56MHz 1kw mosfet GRM21BR71H474KA88L 13.56MHZ mosfet zener diode c24 5t RF inductor 13.56 MHz

    1kw mosfet

    Abstract: circuit diagram of 13.56MHz RF Generator DRF12xx P5100 acoustic transducer 13.56MHZ mosfet
    Text: DRF12XX Evaluation Board Figure 1 shows a simplified circuit diagram for the DRF12XX series of devices. The Hybrid consists of a MOSFET Driver and Power MOSFET. The control signal is applied to internal driver through pin 4 IN and referenced to pin 5 (SG) a Kelvin Ground return. The pin 3 (FN)


    Original     		PDF DRF12XX DRF12XX 56MHz 1kw mosfet circuit diagram of 13.56MHz RF Generator P5100 acoustic transducer 13.56MHZ mosfet

    ELM36403EA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM36403EA-S •概要 ■特点 ELM36403EA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-30V ·Id=-5A ·Rds on < 51mΩ (Vgs=-10V) ·Rds(on) < 85mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original     		PDF ELM36403EA-S May-18-2006 P5103EAG ELM36403EA

    Untitled

    Abstract: No abstract text available
    Text: Application Note 1805 October 2012 DRF12XX Evaluation Board Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com Figure 1 shows a simplified circuit diagram for the DRF12XX series of devices. The Hybrid consists of a MOSFET


    Original     		PDF DRF12XX DRF12XX, DRF12XX

    gate drive pulse transformer

    Abstract: Transformer Vitec
    Text: TYPE 56P MOSFET GATE DRIVE TRANSFORMER FEATURES Designed for operating frequency in excess of 200KHz. Low leakage inductance: drives most power FETS. Drive directly from pulse modulators. 3750 Vrms gate to drive hipot test. Base material meets flammability requirement of UL94V-0.


    Original     		PDF 200KHz. UL94V-0. E107307. 56P3385 56P3386 56P3387 56P3388 P-510 gate drive pulse transformer Transformer Vitec

    Transformer Vitec

    Abstract: P5101-1
    Text: TYPE 56P MOSFET GATE DRIVE TRANSFORMER FEATURES Designed for operating frequency in excess of 200KHz. Low leakage inductance: drives most power FETS. Drive directly from pulse modulators. 3750 Vrms gate to drive hipot test. Base material meets flammability requirement of UL94V-0.


    Original     		PDF 200KHz. UL94V-0. E107307. 56P3385 56P3386 56P3387 56P3388 P-510 Transformer Vitec P5101-1

    mosfet p51

    Abstract: No abstract text available
    Text: MIC94050/94051 Micrel MIC94050/94051 4-Terminal SymFET P-Channel MOSFET General Description The MIC94050 and MIC94051 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is


    Original     		PDF MIC94050/94051 MIC94050 MIC94051 MIC94050/1 OT-143 mosfet p51

    3 terminal mosfet p51

    Abstract: 74HC04 datasheet 74HC04 MIC94050 MIC94050BM4 MIC94051 MIC94051BM4 94051 25VGS
    Text: MIC94050/94051 Micrel MIC94050/94051 4-Terminal SymFET P-Channel MOSFET General Description The MIC94050 and MIC94051 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is


    Original     		PDF MIC94050/94051 MIC94050 MIC94051 MIC94050/1 3 terminal mosfet p51 74HC04 datasheet 74HC04 MIC94050BM4 MIC94051BM4 94051 25VGS

    AP5100

    Abstract: AP-5100 AP5100WG
    Text: AP5100 1.2A STEP-DOWN CONVERTER with 1.4MHz SWITCHING FREQUENCY Description Pin Assignments The AP5100 is a current mode step-down converter with a built-in power MOSFET to enable smallest solution size power conversion. Top View With the low series resistance power switch it enables a


    Original     		PDF AP5100 AP5100 DS32130 AP-5100 AP5100WG

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM36403EA-S •General description ■Features ELM36403EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-5A Rds(on) < 51mΩ (Vgs=-10V) Rds(on) < 85mΩ (Vgs=-4.5V)


    Original     		PDF ELM36403EA-S ELM36403EA-S P5103EAG May-18-2006

    Untitled

    Abstract: No abstract text available
    Text: AP5100 1.2A STEP-DOWN CONVERTER with 1.4MHz SWITCHING FREQUENCY Description Pin Assignments The AP5100 is a current mode step-down converter with a built-in power MOSFET to enable smallest solution size power conversion. Top View With the low series resistance power switch it enables a


    Original     		PDF AP5100 AP5100 DS32130

    Untitled

    Abstract: No abstract text available
    Text: PTF 10107 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The 10107 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts power output. Nitride surface passivation and gold


    Original     		PDF 1-877-GOLDMOS 1301-PTF

    74HC04

    Abstract: MIC94050 MIC94050BM4 MIC94051 MIC94051BM4 3 terminal mosfet p51
    Text: MIC94050/94051 Micrel MIC94050/94051 4-Terminal TinyFET P-Channel MOSFET Final General Description Features The MIC94050 and MIC94051 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is


    Original     		PDF MIC94050/94051 MIC94050 MIC94051 MIC94050/1 OT-143 OT-143 74HC04 MIC94050BM4 MIC94051BM4 3 terminal mosfet p51

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM36403EA-S •General description ■Features ELM36403EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-5A Rds(on) < 51mΩ (Vgs=-10V) Rds(on) < 85mΩ (Vgs=-4.5V)


    Original     		PDF ELM36403EA-S ELM36403EA-S P5103EAG May-18-2006

    DRF1300

    Abstract: P6139A P5100 Chokes* COMMON MODE SUPPRESSION 250V high power pulse generator with mosfet pulse DRF1300
    Text: DRF13XX Evaluation Board Figure 1 shows a simplified circuit diagram for the DRF13XX series of devices. The Hybrid consists of two MOSFET Drivers and two Power MOSFETs in a Push-Pull configuration. For U1, the control signal is applied to internal driver through pin 4 IN


    Original     		PDF DRF13XX DRF13XX DRF1300 010in DRF13xx. P6139A P5100 Chokes* COMMON MODE SUPPRESSION 250V high power pulse generator with mosfet pulse DRF1300

    27.12Mhz

    Abstract: PRF-1150 oscillator 27.12mhz circuit diagram of 13.56MHz RF Generator 600w schematic diagram switching power supply zener diode c24 5t 5.1V DIODE ZENER Zener LED ramp generator 555 rf toroid design considerations
    Text: Application Note 1813 September 2010 27.12 MHz, CLASS-E, 600W RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E 27M Reference design is available to expedite the evaluation of the DRF1200 Driver


    Original     		PDF DRF1200 DRF1200/Class-E ERJ-ENF1001V ERJ-6ENF51R1V 269W-1 ERJ-6ENF5110V BZX84C5V1-7-F 27.12Mhz PRF-1150 oscillator 27.12mhz circuit diagram of 13.56MHz RF Generator 600w schematic diagram switching power supply zener diode c24 5t 5.1V DIODE ZENER Zener LED ramp generator 555 rf toroid design considerations

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    Untitled

    Abstract: No abstract text available
    Text: 24 July 2008 Data Sheet No. PD60359 IRMD26310DJ 3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT IRS26310DJ GATE DRIVER IC FEATURES • • • • • • • • • • • • • • • • • Drives up to six IGBT/MOSFET power devices Gate drive supplies up to 20 V per channel


    Original     		PDF PD60359 IRMD26310DJ IRS26310DJ

    SMD fuse P110

    Abstract: schematic diagram 100v dc motor speed controller IC L7805cv circuit diagram of smps 400w DESKTOP LCL-UF1125 IRS2631 flyback transformer high-voltages smd smps 230v ac to 18v dc tyco igbt p11 induction motor speed control circuits
    Text: 24 July 2008 Data Sheet No. PD60359 IRMD26310DJ 3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT IRS26310DJ GATE DRIVER IC FEATURES • • • • • • • • • • • • • • • • • Drives up to six IGBT/MOSFET power devices Gate drive supplies up to 20 V per channel


    Original     		PDF PD60359 IRMD26310DJ IRS26310DJ SMD fuse P110 schematic diagram 100v dc motor speed controller IC L7805cv circuit diagram of smps 400w DESKTOP LCL-UF1125 IRS2631 flyback transformer high-voltages smd smps 230v ac to 18v dc tyco igbt p11 induction motor speed control circuits

    Untitled

    Abstract: No abstract text available
    Text: 24 July 2008 Data Sheet No. PD60358 IRMD2336DJ 3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT IRS2336DJ GATE DRIVER IC FEATURES • • • • • • • • • • • • • • • • Drives up to six IGBT/MOSFET power devices Gate drive supplies up to 20 V per channel


    Original     		PDF PD60358 IRMD2336DJ IRS2336DJ

    IRMD2336DJ

    Abstract: International Rectifier IRFBG30 transistor 1000V TO220 3,1 A JK55B-100-8 circuit diagram of smps 400w DESKTOP N5RL20 schematic diagram 100v dc motor speed controller SMD fuse P110 Circuit diagram of 1W LED drive input 220vac PRPN082PAEN
    Text: 24 July 2008 Data Sheet No. PD60358 IRMD2336DJ 3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT IRS2336DJ GATE DRIVER IC FEATURES • • • • • • • • • • • • • • • • Drives up to six IGBT/MOSFET power devices Gate drive supplies up to 20 V per channel


    Original     		PDF PD60358 IRMD2336DJ IRS2336DJ IRMD2336DJ International Rectifier IRFBG30 transistor 1000V TO220 3,1 A JK55B-100-8 circuit diagram of smps 400w DESKTOP N5RL20 schematic diagram 100v dc motor speed controller SMD fuse P110 Circuit diagram of 1W LED drive input 220vac PRPN082PAEN

    Untitled

    Abstract: No abstract text available
    Text: Application Note 1806 October 2012 DRF13XX Evaluation Board Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com Figure 1 shows a simplified circuit diagram for the DRF13XX series of devices. The Hybrid consists of two MOSFET Drivers and two Power MOSFETs in a Push-Pull configuration. For U1, the control signal is applied to


    Original     		PDF DRF13XX DRF13XX, DRF13X DRF13XX.

    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM36403EA-S •概要 ■特長 ELM36403EA-S は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-5A ・ Rds on < 51mΩ (Vgs=-10V) ・ Rds(on) < 85mΩ (Vgs=-4.5V)


    Original     		PDF ELM36403EA-S P5103EAG May-18-2006

    Untitled

    Abstract: No abstract text available
    Text: TYPE 56P MOSFET GATE DRIVE TRANSFORMER FEATURES Low leakage inductance: drives most power FETS. Drive directly from pulse modulators. 3750 Vrms gate to drive hipot test. Base material meets flammability requirement of UL94V-0. • Manufactured to UL recognized 130 insulation system.


    OCR Scan     		PDF UL94V-0. 56P3385 56P3386 56P3387 56P3388 P-510