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    MOSFET P-CHANNEL 12V Search Results

    MOSFET P-CHANNEL 12V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P-CHANNEL 12V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF95

    Abstract: IRF9510 p channel mosfet 100v TA17541
    Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET


    Original     		PDF IRF95 O220AB IRF9510 IRF95 IRF9510 p channel mosfet 100v TA17541

    F7101

    Abstract: IRF7101 IRF7338
    Text: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET


    Original     		PDF 94372C IRF7338 EIA-481 EIA-541. F7101 IRF7101 IRF7338

    IRF7338

    Abstract: MOSFET N-CHANNEL 60v 60A
    Text: PD - 94372B IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET


    Original     		PDF 94372B IRF7338 EIA-481 EIA-541. IRF7338 MOSFET N-CHANNEL 60v 60A

    F7101

    Abstract: IRF7101 IRF7338
    Text: PD - 94372A IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-CHANNEL MOSFET VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω


    Original     		PDF 4372A IRF7338 EIA-481 EIA-541. F7101 IRF7101 IRF7338

    FDMJ1032C

    Abstract: marking 032 SC-75 Dual N & P-Channel
    Text: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel „ Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement


    Original     		PDF FDMJ1032C FDMJ1032C marking 032 SC-75 Dual N & P-Channel

    MCH3339

    Abstract: MCH5823 SS10015M
    Text: MCH5823 Ordering number : ENN7757 MCH5823 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a P-Channel Silicon MOSFET MCH3339 and a Schottky Barrier Diode (SS10015M)


    Original     		PDF MCH5823 ENN7757 MCH3339) SS10015M) MCH3339 MCH5823 SS10015M

    P-channel N-Channel power mosfet SO-8

    Abstract: IRF7350PBF IRF7350
    Text: PD - 95367 IRF7350PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 100V


    Original     		PDF IRF7350PbF -100V EIA-481 EIA-541. P-channel N-Channel power mosfet SO-8 IRF7350PBF IRF7350

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTC606P-H Power MOSFET -6A, -12V, P-CHANNEL 1.8V TRENCH MOSFET  DESCRIPTION The UTC UTC606P-H is a P-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and high switching speed.


    Original     		PDF UTC606P-H UTC606P-H OT-26 QW-R502-B34

    FDC6432SH

    Abstract: No abstract text available
    Text: FDC6432SH 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET General Description Features This complementary P-Channel MOSFET with SyncFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous


    Original     		PDF FDC6432SH FDC6432SH

    utc 324

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.


    Original     		PDF UT2305 UT2305 UT2305L-AE2-R UT2305G-AE2-R UT2305L-AE3-R UT2305G-AE3-R OT-23-3 OT-23 QW-R502-133 utc 324

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.


    Original     		PDF UT2305 UT2305 UT2305G-AE2-R UT2305G-AE3-R UT2305G-AG3-R OT-23-3 OT-23 OT-26 OT-23 QW-R502-133

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.


    Original     		PDF UT2305 UT2305 UT2305L-AE2-R UT2305G-AE2-R UT2305L-AE3-R UT2305G-AE3-R UT2305L-AG3-R UT2305G-AG3-R OT-23-3 OT-23

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3443 Power MOSFET P-CHANNEL 2.5-V G-S MOSFET  DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate


    Original     		PDF UT3443 UT3443 UT3443G-AG6-R OT-26 QW-R502-557

    7447

    Abstract: CPH5818 MCH3339 SBS007M
    Text: Ordering number : ENN7447 CPH5818 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5818 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3339 and a Schottky Barrier Diode (SBS007M) 2171


    Original     		PDF ENN7447 CPH5818 MCH3339) SBS007M) CPH5818] 7447 CPH5818 MCH3339 SBS007M

    Untitled

    Abstract: No abstract text available
    Text: VEC2611 VEC2611 Ordering number : ENA0425 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting.


    Original     		PDF VEC2611 ENA0425 VEC2611 900mm2â VEC2611/D

    7447

    Abstract: CPH5818 MCH3339 SBS007M
    Text: Ordering number : ENN7447 CPH5818 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5818 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3339 and a Schottky Barrier Diode (SBS007M) 2171


    Original     		PDF ENN7447 CPH5818 MCH3339) SBS007M) CPH5818] 7447 CPH5818 MCH3339 SBS007M

    diode N1004

    Abstract: N1004 diode CPH5812 n1004 TA-3787 MCH3317 SBS010M N2603
    Text: CPH5812 Ordering number : EN7467B SANYO Semiconductors DATA SHEET CPH5812 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with a P-Channel Sillicon MOSFET MCH3317 and a Schottky Barrier Diode (SBS010M)


    Original     		PDF CPH5812 EN7467B MCH3317) SBS010M) diode N1004 N1004 diode CPH5812 n1004 TA-3787 MCH3317 SBS010M N2603

    Untitled

    Abstract: No abstract text available
    Text: SCH2809 SCH2809 Features • • • Ordering number : ENA0446 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET SCH1305 and a Schottky barrier diode (SBS018) contained


    Original     		PDF SCH2809 ENA0446 SCH1305) SBS018) SCH2809/D

    IC rl46

    Abstract: VEC2611
    Text: VEC2611 Ordering number : ENA0425 SANYO Semiconductors DATA SHEET VEC2611 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,


    Original     		PDF VEC2611 ENA0425 VEC2611 900mm. A0425-6/6 IC rl46

    at 8515

    Abstract: AAT8515 AAT8515IJS-T1 SC70JW-8 mosfet 23 Tsop-6 150C1
    Text: AAT8515 20V P-Channel Power MOSFET General Description Features The AAT8515 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead


    Original     		PDF AAT8515 AAT8515 SC70JW-8 at 8515 AAT8515IJS-T1 mosfet 23 Tsop-6 150C1

    SCH2810

    Abstract: No abstract text available
    Text: SCH2810 Ordering number : ENN8246 SCH2810 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package


    Original     		PDF SCH2810 ENN8246 SCH2810

    UT3443

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3443 Preliminary Power MOSFET P-CHANNEL 2.5-V G-S MOSFET „ DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate


    Original     		PDF UT3443 UT3443 OT-26 UT3443L-AG6-R UT3443G-AG6-R QW-R502-557

    AAT8543

    Abstract: AAT8543IJS-T1 SC70JW-8
    Text: AAT8543 20V P-Channel Power MOSFET General Description Features The AAT8543 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead


    Original     		PDF AAT8543 AAT8543 SC70JW-8 AAT8543IJS-T1

    ic 74243

    Abstract: MCH3317 MCH5815 SBS007M TA-3841
    Text: Ordering number : ENN7424 MCH5815 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5815 DC / DC Converter Applications 0.25 • [MCH5815] 0.25 Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3317 and a Schottky Barrier Diode (SBS007M) 2195


    Original     		PDF ENN7424 MCH5815 MCH5815] MCH3317) SBS007M) ic 74243 MCH3317 MCH5815 SBS007M TA-3841