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    MOSFET N 30V 30A 252 Search Results

    MOSFET N 30V 30A 252 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3365-Z-AZ Renesas Electronics Corporation Nch Single Power Mosfet 30V 30A 14Mohm Mp-3Z/To-252 Visit Renesas Electronics Corporation Buy
    2SJ479STL-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -30A 35Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    HAT2168H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 30A 7.9Mohm Lfpak Visit Renesas Electronics Corporation
    H7N0310LSTR-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 30A 10Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    HAT2116H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 30A 8.2Mohm Lfpak Visit Renesas Electronics Corporation

    MOSFET N 30V 30A 252 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APM3023NU

    Abstract: APM3023N STD-020C A102 diode
    Text: APM3023NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS ON =15mΩ (typ.) @ VGS=10V RDS(ON)=22mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)


    Original     		PDF APM3023NU 0V/30A, O-252 APM3023N APM3023N APM3023NU STD-020C A102 diode

    APM3024N

    Abstract: APM3024NU STD-020C
    Text: APM3024NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS ON =15mΩ (typ.) @ VGS=10V G RDS(ON)=22mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)


    Original     		PDF APM3024NU 0V/30A, O-252 APM3024N APM3024N MIL-STD-883D-2003 MIL-STD-883D-1005 JESD-22-B APM3024NU STD-020C

    3023n

    Abstract: APM3023N A102 J-STD-020A M3023 TO-252-E
    Text: APM3023N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS ON =15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability TO-252.TO-220 and SOT-223 Packages


    Original     		PDF APM3023N 0V/30A, O-252 O-220 OT-223 OT-223 O-252 3023n APM3023N A102 J-STD-020A M3023 TO-252-E

    diode ja

    Abstract: No abstract text available
    Text: SSD3030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 30A TO-252 RDS(ON) (mΩ) Max D 17 @VGS = 10V G 35 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable. G ◆ TO-252 package. ◆ Pb Free.


    Original     		PDF SSD3030N O-252 O-252 25mum diode ja

    SSD95N03

    Abstract: MosFET 95N03
    Text: SSD95N03 96A , 30V , RDS ON 4mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) The SSD95N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SSD95N03 O-252 SSD95N03 O-252 24-Nov-2011 MosFET 95N03

    Mosfet

    Abstract: SSFM2508
    Text: SSFM2508 25V N-Channel MOSFET Main Product Characteristics: 25V VDSS SSFM2508 RDS on 8mohm ID 55A TO-252 DPAK Marking and pin assignment Features and Benefits:       Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications


    Original     		PDF SSFM2508 O-252 Mosfet SSFM2508

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    Untitled

    Abstract: No abstract text available
    Text: KSMD60N03L N-Channel Logic Level MOSFETs 30V, 30A, 0.023 Ω Features TO-252AA • Fast switching • r DS ON = 0.014Ω (Typ), V GS = 10V • r DS(ON) = 0.024Ω (Typ), V GS = 4.5V • Qg (Typ) = 9.6nC, V GS = 5V • Qgd (Typ) = 3.4nC • C ISS (Typ) = 900pF


    Original     		PDF KSMD60N03L O-252AA 900pF

    APM3109

    Abstract: APM3109NU MOSFET N 30V 30A 252 A102 A104 A108 B102 JESD-22 J-STD-020D
    Text: APM3109NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, D RDS ON =7.5mΩ (typ.) @ VGS=10V G RDS(ON)=12mΩ (typ.) @ VGS=4.5V • • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged D Avalanche Rated


    Original     		PDF APM3109NU 0V/50A, O-252-3 APM3109N APM31093 JESD-22, APM3109 APM3109NU MOSFET N 30V 30A 252 A102 A104 A108 B102 JESD-22 J-STD-020D

    IRFZ34V

    Abstract: No abstract text available
    Text: PD - 94841 IRFIZ34VPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description HEXFET Power MOSFET l D


    Original     		PDF IRFIZ34VPbF O-220 IRFZ34V

    IRFZ34V

    Abstract: No abstract text available
    Text: PD - 94841 IRFIZ34VPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description HEXFET Power MOSFET l D


    Original     		PDF IRFIZ34VPbF O-220 IRFZ34V

    Untitled

    Abstract: No abstract text available
    Text: PD - 95127 IRL3713PbF IRL3713S IRL3713L SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l TO-220 is available in PbF as Lead-Free


    Original     		PDF IRL3713PbF IRL3713S IRL3713L O-220 O-220AB O-262 AN-994.

    APM3112N

    Abstract: apm31
    Text: APM3112NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, D RDS ON =9.5mΩ (typ.) @ VGS=10V G RDS(ON)=17mΩ (typ.) @ VGS=4.5V • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged Lead Free and Green Devices Available


    Original     		PDF APM3112NU 0V/50A, O-252-3 APM3112N O-252-3 JESD-22, apm31

    APM3109

    Abstract: apm31
    Text: APM3109NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =7.5mΩ (typ.) @ VGS=10V G RDS(ON)=12mΩ (typ.) @ VGS=4.5V • • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Avalanche Rated D


    Original     		PDF APM3109NU 0V/50A, O-252 APM3109N O-252 APM3109 apm31

    MJ16015

    Abstract: IRFIZ34V IRFZ34V 12V 30A diode
    Text: PD - 94053 IRFIZ34V HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS on = 28mΩ


    Original     		PDF IRFIZ34V O-220 MJ16015 IRFIZ34V IRFZ34V 12V 30A diode

    IRFZ34V

    Abstract: smps 2000 watts circuit
    Text: PD - 94042 IRFZ34V HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS on = 28mΩ


    Original     		PDF IRFZ34V O-220 pref52-7105 IRFZ34V smps 2000 watts circuit

    AN-994

    Abstract: IRFZ34V IRFZ34VL IRFZ34VS 94180
    Text: PD - 94180 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description IRFZ34VS IRFZ34VL l HEXFET Power MOSFET l D VDSS = 60V


    Original     		PDF IRFZ34VS IRFZ34VL AN-994 IRFZ34V IRFZ34VL IRFZ34VS 94180

    94103

    Abstract: IRFU3709 24V 30A SMPS
    Text: PD - 94103 IRFU3709 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l l l l VDSS RDS on max


    Original     		PDF IRFU3709 94103 IRFU3709 24V 30A SMPS

    AN-994

    Abstract: IRFZ34V IRFZ34VL IRFZ34VS
    Text: PD - 94180 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description IRFZ34VS IRFZ34VL l HEXFET Power MOSFET l D VDSS = 60V


    Original     		PDF IRFZ34VS IRFZ34VL AN-994 IRFZ34V IRFZ34VL IRFZ34VS

    A102

    Abstract: APM3009N APM3009NU rg6 to vga TO-252 N-channel MOSFET 30V50A
    Text: APM3009NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =7.5mΩ (typ.) @ VGS=10V G RDS(ON)=11mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available


    Original     		PDF APM3009NU 0V/50A, O-252 APM3009N APM3009N APM300 A102 APM3009NU rg6 to vga TO-252 N-channel MOSFET 30V50A

    RSN 3305

    Abstract: schematic diagram converter 12v to 24v 30a 10uf Capacitor ESR 2mohm Panasonic dv 700 manual compensator for cuk converter SP6133 68uF 10V SANYO SP6133EB schematic diagram PWM 12V 30a QFN 8 CARSEM
    Text: SP6133 Solved by TM 2 GND 3 VFB 4 UV IN V IN BST 13 12 GH SP6133 16 Pin QFN 3mm x 3mm 5 6 7 11 SWN 10 ISP 9 ISN 8 SS PGND 14 PWRGD 1 15 EN GL 16 COMP FEATURES • 5V to 24V Input step down converter ■ Up to 30A output capability ■ Highly integrated design, minimal components


    Original     		PDF SP6133 16-Pin SP6133 MIL-STD-883E 100pF EIAJ-ED-17. 100mA RSN 3305 schematic diagram converter 12v to 24v 30a 10uf Capacitor ESR 2mohm Panasonic dv 700 manual compensator for cuk converter 68uF 10V SANYO SP6133EB schematic diagram PWM 12V 30a QFN 8 CARSEM

    APM3009N

    Abstract: APM3009NU STD-020C rg6 to vga mosfet Marking Code b3
    Text: APM3009NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =7.5mΩ (typ.) @ VGS=10V RDS(ON)=11mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)


    Original     		PDF APM3009NU 0V/50A, O-252 APM3009N APM3009N MIL-STD-883D-2003 883D-1005 JESD-22-B, APM3009NU STD-020C rg6 to vga mosfet Marking Code b3

    IRL3713S

    Abstract: IRL3713L AN-994 IRL3713 mosfet k 61 y1
    Text: PD - 94184 PROVISIONAL IRL3713 IRL3713S IRL3713L SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power


    Original     		PDF IRL3713 IRL3713S IRL3713L O-220AB O-262 O-220AB AN-994. IRL3713S IRL3713L AN-994 IRL3713 mosfet k 61 y1

    Untitled

    Abstract: No abstract text available
    Text: FôteEiTUâUË U JI 2SK2050 N-channel MOS-FET F -lll S e r ie s 100 V 80W > Outline Drawing > Features - 0,055Q 30A High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control General Purpose Power Amplifier


    OCR Scan     		PDF 2SK2050 gs-20K